2SK3494 PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
1Publication date: March 2004 SJG00037AED 2SK3494 N-channel enhancement mode MOSFET ■ Features
- Low on-resistance, low Qg
- High avalanche resistance ■ Applications
- For PDP
- For high-speed switching ■ Absolute Maximum Ratings TC = 25°C ■ Electrical Characteristics TC = 25°C ± 3°C Unit: mm Parameter Symbol Rating Unit Drain-source surrender voltage V DSS 250 V Gate-source surrender voltage V GSS ±30 V Drain current I D 20 A Peak drain current I DP 80 A Avalanche energy capability * EAS 657 mJ Power dissipation P D 50 W Ta = 25°C 1.4 Channel temperature T ch 150 °C Storage temperature T stg −55 to +150 °C 0 to 0.5 123 (8.9) (10.2) 0 to 0.3 (2.1) (6.4) (1.4) 10.5±0.3 4.6±0.2 1.4±0.1 0.8±0.1 2.5±0.2 1.4±0.1 2.54±0.3 10.1±0.33.0±0.5 (1.4) 1.5±0.3 0.6±0.1 1: Gate 2: Drain 3: Source Note) *: L = 2.79 mH, I L = 20 A, V DD = 50 V, 1 pulse, T a = 25°C Marking Symbol: K3494 Parameter Symbol Conditions Min Typ Max Unit Drain-source surrender voltage V DSS ID = 1 mA, VGS = 0 250 V Gate threshold voltage V th VDS = 10 V, ID = 1 mA 2.0 4.0 V Drain-source cutoff current I DSS VDS = 200 V, VGS = 01 0 µA Gate-source cutoff current I GSS VGS = ±30 V, VDS = 0 ±1 µA Drain-source ON resistance R DS(on) VGS = 10 V, ID = 10 A 82 105 m Ω Forward transfer admittance Yfs VDS = 10 V, ID = 10 A 7 14 S Short-circuit forward transfer capacitance Ciss VDS = 25 V, VGS = 0, f = 1 MHz 2 450 pF (Common-source) Short-circuit output capacitance C oss 356 pF (Common-source) Reverse transfer capacitance C rss 40 pF (Common-source) Turn-on delay time t d(on) VDD ≈ 100 V, ID = 10 A 36 ns Rise time T r RL = 10 Ω, VGS = 10 V 20 ns Turn-off delay time t d(off) 184 ns Fall time t f 29 ns
2 SJG00037AED
Safe operation area P C Ta Drain current ID (A) Drain-source voltage VDS (V) 10−1 10−2 100 1 000 1 10 100 1 000 IDP ID DC t = 100 µs t = 1 ms t = 10 ms Non repetitive pulse TC = 25°C 100 05 0 25 100 75 125 150 Ambient temperature Ta (°C) Collector power dissipation PC (W) (1) (2) (1) TC = Ta (2) Without heat sink Parameter Symbol Conditions Min Typ Max Unit Diode foward voltage V DSF IDR = 20 A, VGS = 0 −1.5 V Reverse recovery time t rr L = 230 µH, VDD = 100 V 142 ns Reverse recovery charge Q rr IDR = 10 A, di/dt = 100 A/µs 668 nC Gate charge load Q g VDD = 100 V, ID = 10 A 41 nC Gate-source charge Q gs VGS = 10 V 8.4 nC Gate-drain charge Q gd 14 nC Thermal resistance (ch-c) R th(ch-c) 2.5 °C/W Thermal resistance (ch-a) R th(ch-a) 89.2 °C/W ■ Electrical Characteristics (continued) TC = 25°C ± 3°C Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
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