2SK3490 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 30 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 8A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 32 A Allowable Power Dissipation P D Mounted on a ceramic board (250mm25 0.8mm) 1.5 W Tc=25°C 3.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 30 V Zero-Gate Voltage Drain Current I DSS VDS =30V, VGS =0V 1 µA Gate-to-Source Leakage Current I GSS VGS =±16V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 1.2 2.6 V Forward Transfer Admittance yfs VDS =10V, ID =4A 4.8 8 S Static Drain-to-Source On-State Resistance R DS (on)1 I D =4A, VGS =10V 30 39 m Ω R DS (on)2 I D =2A, VGS =4V 40 56 m Ω Input Capacitance Ciss V DS =10V, f=1MHz 690 pF Output Capacitance Coss V DS =10V, f=1MHz 160 pF Reverse Transfer Capacitance Crss V DS =10V, f=1MHz 88 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 10 ns Rise Time t r See specified Test Circuit. 60 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 27 ns Fall Time t f See specified Test Circuit. 32 ns Marking : LG Continued on next page. N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

No.9085-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Total Gate Charge Qg V DS =10V, VGS =10V, ID =8A 16 nC Gate-to-Source Charge Qgs V DS =10V, VGS =10V, ID =8A 3.4 nC Gate-to-Drain “Miller” Charge Qgd V DS =10V, VGS =10V, ID =8A 2.4 nC Diode Forward Voltage V SD IS=8A, VGS =0V 0.85 1.2 V Package Dimensions Switching Time Test Circuit unit : mm 7007-003 PW=10 µs D.C.≤1% P.G 50Ω G S D ID =4A R L=3.75Ω VDD =15V VOUT 2SK3490 VIN 10V VIN 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 12 3 1.5 Top View Bottom View 1 : Gate 2 : Drain 3 : Source SANYO : PCP 0 0.2 Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A V GS =2.0V 2.5V 10V IT06300 Gate-to-Source V oltage, VGS -- V ID -- VGS Drain Current, ID -- A --25 IT06301 6.0V 3.0V 4.5V 3.5V 4.0V V DS =10V Ta=75

No.9085-3/4 02468 1 0 1 2 1 4 1 6 1 8 2 0 4AID =2A 0.01 0.1 1.0 223 5 7 0.1 235 7 1.00.01 IT10070 IDP =32A Operation in this area is limited by RDS (on). DC operation 100ms 10ms 1ms ID =8A 10µs100 µs 235 35 7 10 0.01 0.1 1.0 100 1000 1.0 Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns IT10069 Drain Current, ID -- A IT10068 23 5 70.1 1.0 23 5 7 10 0.1 1.0 Forward Transfer Admittance, yfs -- S yfs -- ID IT06305 Diode Forward V oltage, VSD -- V Source Current, IS -- A IS -- VSD V GS =0V Ta=75 0 5 10 15 20 25 30 100 1000 Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF f=1MHz IT06307 Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V IT10080 02468 1 0 1 2 1 4 1 6 1 8 A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A 23 5 70.01 0.1 1.0 23 5 7 23 5 7 10 --25 V DS =10V ID =8A Ciss Coss Crss Ciss, Coss, Crss -- VDS - -60 - -40 - -20 0 20 40 60 80 100 120 140 160 Gate-to-Source V oltage, VGS -- V R DS (on) -- VGS IT10066 Ambient Temperature, Ta -- °C R DS (on) -- Ta IT10067 Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Ta=25°C ID=2A, VGS =4V ID =4A, VGS =10V td(on) td(off) tr tf V DD =15V V GS =10V 75°C--25 Ta=25 V DS =10V Tc=25°C Single pulse

No.9085-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2005. Specifications and information herein are subject to change without notice. PS Note on usage : Since the 2SK3490 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 0 20 40 60 80 100 120 140 160 0.5 1.0 1.5 2.0 IT10071 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 3.5 4.0 IT10072 Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W Mounted on a ceramic board (250mm 250.8mm) Case Tamperature, Tc -- °C PD -- Tc Allowable Power Dissipation, PD -- W