2SK3488

2SK3488 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 30 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 2.5 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 10 A Allowable Power Dissipation P D Mounted on a ceramic board (250mm25 0.8mm) 1.0 W Tc=25°C 3.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0 30 V Zero-Gate Voltage Drain Current I DSS VDS =30V, VGS =0 1 µA Gate-to-Source Leakage Current I GSS VGS =±16V, VDS =0 ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 1.2 2.6 V Forward Transfer Admittance yfs VDS =10V, ID =1.3A 1.6 2.3 S Static Drain-to-Source On-State Resistance R DS (on)1 I D =1.3A, VGS =10V 125 160 m Ω R DS (on)2 I D =0.7A, VGS =4V 200 280 m Ω Marking : LE Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SK3488 Package Dimensions unit : mm 2062A [2SK3488]

41002 TS IM TA-3526

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications 1 : Gate 2 : Drain 3 : Source SANYO : PCP 4.5 1.6 0.50.4 1.5 1.0 2.5 4.25max 3.0 1.5 0.4 0.75 3 2 1 (Bottom view) Preliminary

No.7181-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Input Capacitance Ciss V DS =10V, f=1MHz 120 pF Output Capacitance Coss V DS =10V, f=1MHz 30 pF Reverse Transfer Capacitance Crss V DS =10V, f=1MHz 15 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 6 ns Rise Time t r See specified Test Circuit. 5 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 17 ns Fall Time t f See specified Test Circuit. 5 ns Total Gate Charge Qg V DS =10V, VGS =10V, ID =2.5A 3.6 nC Gate-to-Source Charge Qgs V DS =10V, VGS =10V, ID =2.5A 0.6 nC Gate-to-Drain “Miller” Charge Qgd V DS =10V, VGS =10V, ID =2.5A 0.5 nC Diode Forward Voltage V SD IS=2.5A, VGS =0 0.9 1.2 V Switching Time Test Circuit 250 200 150 100 300 0.5 1.0 1.5 2.0 2.5 3.0 ID -- VDS IT02698 100 150 200 250 300 350 400 0123456789 1 0 R DS (on) -- VGS Tc=25°C IT04292 R DS (on) -- Tc IT04293 ID=0.7A, V GS=4V ID=1.3A, V GS =10V - -60 - -40 - -20 0 20 40 60 80 100 120 160 140 2.5 2.0 1.5 1.0 0.5 3.0 ID -- VGS V DS =10V --25 Tc=75 Tc= --25 IT04291 25°C 1.3AID =0.7A V GS =3V 10V Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Case Temperature, Tc -- °C PW=10 µs D.C.≤1% P. G 50Ω G S D ID =1.3A R L=11.5Ω VDD =15V VOUT 2SK3488 VIN 10V VIN

No.7181-3/4 20 40 60 80 100 120 1.0 0.8 0.6 0.4 0.2 1.2 140 160 PD -- Ta 0.1 1.0 0.01 0 5 10 15 20 25 30 0.01 0.1 1.0 IT04298 20 40 60 80 100 120 3.5 3.0 2.5 2.0 1.5 0.5 1.0 4.0 140 160 PD -- Tc IT04299 A S O IT04297 1000 100 Ciss, Coss, Crss -- VDS f=1MHz Ciss Coss Crss IT02705 IT04295 IF -- VSD V GS =0 --25 Tc=75 0.1 23 5 7 1.0 23 5 7 10 23 5 <10µs 100 µs Operation in this area is limited by RDS (on). ID =2.5A DC operation IDP =10A 1ms 10ms 100ms VGS -- Qg IT04296 1.0 3 0.157 1.023 5 23 5 7 100 SW Time -- ID V DD =15V V GS =10V td(on) td(off) tr tf IT02704 IT04294 0.01 0.1 0.1 1.0 1023 5 7 23 5 7 23 5 7 1.0 yfs -- ID V DS =10V 75°C 25°C Tc= --25 V DS =10V ID =2.5A Ta=25°C Single pulse Mounted on a ceramic board(250mm 25 0.8mm) Mounted on a ceramic board(250mm 250.8mm) Drain Current, ID -- A Switching Time, SW Time -- ns Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Forward Current, IF -- A Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A

No.7181-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2002. Specifications and information herein are subject to change without notice. PS