2SK3474-01 FUJI

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Absolute Maximum Ratings at Tc=25°C ( unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=150V V GS=0V VDS=120V V GS=0V VGS=±30V ID=11.5A VGS=10V ID=11.5A VDS=25V VCC=48V ID=11.5A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA mΩ S pF nC A V µs µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient Rth(ch-a) *4 channel to ambient 0.833 87.0 52.0 °C/W °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D=250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=75V VGS=0V f=1MHz VCC=48V ID=23A VGS=10V L=228 µH Tch=25°C IF=23A VGS=0V Tch=25°C IF=23A VGS=0V -di/dt=100A/µs Tch=25°C V V A A A V A mJ kV/µs kV/µs W W 150 3.0 5.0 250 10 100 54 70 81 6 1500 1730 200 300 17 26 13 20 15 23 34 51 15 23 34 51 9 13.5 12.5 19 1.10 1.60 0.13 0.6 -55 to +150 Outline Drawings [mm] Equivalent circuit schematic Super FAP-G Series Foot Print Pattern (1) Gate(G) (3) Source(S) [power line] (4) Drain(D) (2) Source(S) [signal line] VGS=30V Ta=25°C VDS 150V Ta=25°C *4 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area:500mm2) *3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C=< =< =<*1 L=0.228mH, Vcc=48V, See to Avalanche Energy Graph *2 Tch 150°C=<

0.1 1 10 100 0.1 100gfs [S] ID [A] Typical Transconductance 0123456789 1 0 0.1 100ID[A] VGS[V] Typical Transfer Characteristic 0123456 20V 7.0V 10V 8V 6.5V 7.5V 6.0V ID [A] VDS [V] Typical Output Characteristics VGS=5.5V Characteristics 2SK3474-01 FUJI POWER MOSFET ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°CID=f(VDS):80µs Pulse test,Tch=25°C gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C 0 5 10 15 20 25 30 35 40 45 50 0.00 0.05 0.10 0.15 0.20 0.25 0.30 7.0V6.5V RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance 10V 20V 7.5V6.0V VGS= 5.5V RDS(on)=f(ID):80µs Pulse test, Tch=25°C 02 5 5 0 7 5 1 0 0 1 2 5 1 5 0 Surface mounted on 1000mm2,t=1.6mm FR-4 PCB (Drain pad area : 500mm2) Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 0 25 50 75 100 125 150 100 125 150 175 200 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C]

-50 -25 0 25 50 75 100 125 150 100 120 140 160 180 200 RDS(on) [ m Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=11.5A,VGS=10V 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode 0 5 10 15 20 25 30 35 40 45 50 Qg [C] Typical Gate Charge Characteristics VGS [V] 72V 48V Vcc= 36V 2SK3474-01 FUJI POWER MOSFET VGS=f(Qg):ID=23A, Tch=25°C IF=f(VSD):80µs Pulse test,Tch=25°C -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. typ. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA VGS(th) [V] Tch [°C] 10p 100p 10nC [F] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss Typical Switching Characteristics vs. ID td(on) tr tf td(off) t [ns] ID [A] t=f(ID):Vcc=48V, VGS=10V, RG=10Ω

2SK3474-01 FUJI POWER MOSFET 0 1000 2000 3000 4000 5000 100Rth(ch-a) [ o C/W] Drain Pad Area [mm Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB 0 25 50 75 100 125 150 100 200 300 400 500 IAS=14A IAS=33A IAS=20A EAS [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V Avalanche Current I AV [A] tAV [sec] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec] http://www.fujielectric.co.jp/denshi/scd