2SK3434-ZJ KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
www.kexin.com.cn 1 MOSFET N-Channel MOSFET 2SK3434-ZJ ■ Features
- VDS S = 60V
- ID = 48 A (VGS = 10V)
- RDS(ON) ＜ 20mΩ (VGS = 10V)
- RDS(ON) ＜ 31mΩ (VGS = 4V)
- Low Ciss: Ciss = 2100 pF TYP. ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 48 Pulsed Drain Current (Note.1) IDM 192 Single Avalanche Current (Note.2) IAS 28 1.5 Single Avalanche Energy (Note.2) EAS 78 mJ Thermal Resistance.Junction- to-Ambient RthJA 83.3 Thermal Resistance.Junction- to-Case RthJC 2.23 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 A V PD W Power Dissipation ℃/W Note.1: PW ≤ 10 us, Duty Cycle ≤ 1 % Note.2: Starting TJ = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V Source Body Diode Gate Protection Diode Gate Drain Tc = 25℃ Ta = 25℃
www.kexin.com.cn2 MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 60 V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 10 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±10 uA Gate to Source Cut-off Voltage VGS(off) VDS=10V , ID=1mA 1.5 2.5 V VGS=10V, ID=24A 20 VGS=4V, ID=24A 31 Forward Transconductance gFS VDS=10V, ID=24A 13 27 S Input Capacitance Ciss 2100 Output Capacitance Coss 340 Reverse Transfer Capacitance Crss 170 Total Gate Charge Qg 40 Gate Source Charge Qgs 7 Gate Drain Charge Qgd 11 Turn-On DelayTime td(on) 40 Turn-On Rise Time tr 400 Turn-Off DelayTime td(off) 120 Turn-Off Fall Time tf 160 Body Diode Reverse Recovery Time trr 43 Body Diode Reverse Recovery Charge Qrr 61 nC Diode Forward Voltage VSD IF=48A,VGS=0V 1 V Static Drain-Source On-Resistance RDS(On) mΩ ns VDD = 30V, ID = 24A, VGS(on)=10V, RG = 10 Ω VGS=0V, VDS=10V, f=1MHz VGS=10V, VDS=48V, ID=48A pF nC IF= 48A, VGS=0, dI/dt= 100A/μs N-Channel MOSFET 2SK3434-ZJ