2SK3430-ZJ KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
www.kexin.com.cn 1 MOSFET N-Channel MOSFET 2SK3430-ZJ ■ Features
- VDS S = 40V
- ID = 80 A (VGS = 10V)
- RDS(ON) ＜ 7.3mΩ (VGS = 10V)
- RDS(ON) ＜ 15mΩ (VGS = 4V)
- Low Ciss: Ciss = 2800 pF TYP. Source Body Diode Gate Protection Diode Gate Drain■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 80 Pulsed Drain Current (Note.1) IDM 200 Single Avalanche Current (Note.2) IAS 37 1.5 Single Avalanche Energy (Note.2) EAS 137 mJ Thermal Resistance.Junction- to-Ambient RthJA 83.3 Thermal Resistance.Junction- to-Case RthJC 1.49 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 PD W Power Dissipation ℃/W A V Note.1: PW ≤ 10 us, Duty Cycle ≤ 1 % Note.2: Starting TJ = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V Tc = 25℃ Ta = 25℃
www.kexin.com.cn2 MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 40 V Zero Gate Voltage Drain Current IDSS VDS=40V, VGS=0V 10 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±10 uA Gate to Source Cut-off Voltage VGS(off) VDS=10V , ID=1mA 1.5 2.5 V VGS=10V, ID=40A 7.3 VGS=4V, ID=40A 15 Forward Transconductance gFS VDS=10V, ID=40A 20 40 S Input Capacitance Ciss 2800 Output Capacitance Coss 730 Reverse Transfer Capacitance Crss 320 Total Gate Charge Qg 50 Gate Source Charge Qgs 10 Gate Drain Charge Qgd 14 Turn-On DelayTime td(on) 110 Turn-On Rise Time tr 1800 Turn-Off DelayTime td(off) 170 Turn-Off Fall Time tf 350 Body Diode Reverse Recovery Time trr 50 Body Diode Reverse Recovery Charge Qrr 77 nC Diode Forward Voltage VSD IF=80A,VGS=0V 1 V Static Drain-Source On-Resistance RDS(On) mΩ ns VDD = 20V, ID = 40A, VGS(on)=10V, RG = 10 Ω VGS=0V, VDS=10V, f=1MHz VGS=10V, VDS=32V, ID=80A pF nC IF= 80A, VGS=0, dI/dt= 100A/μs N-Channel MOSFET 2SK3430-ZJ