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Silicon Junction FETs (Small Signal) 1Publication date: April 2002 SJF00034AED 2SK3427 Silicon N-Channel Junction For impedance conversion in low frequency For electret capacitor microphone I Features
- High mutual conductance gm
- Low noise voltage of NV I Absolute Maximum Ratings Ta = 25°C 1: Drain 2: Source 3: Gate MiniT3-F1 Package Unit: mm Parameter Symbol Rating Unit Drain-source voltage V DSO 20 V Drain-gate voltage V DGO 20 V Drain-source current I DSO 2m A Drain-gate current I DGO 2m A Gate-source current I GSO 2m A Allowable power dissipation P D 200 mW Operating ambient temperature T opr −20 to +80 °C Storage temperature T stg −55 to +150 °C Marking Symbol: 5E Parameter Symbol Conditions Min Typ Max Unit Drain current I D VDS = 2.0 V, RD = 2.2 kΩ ± 1% 100 460 µA IDSS VDS = 2.0 V, RD = 2.2 kΩ ± 1%, VGS = 0 107 470 Mutual conductance g m VD = 2.0 V, VGS = 0, f = 1 kHz 660 1 600 µS Noise voltage NV V D = 2.0 V, RD = 2.2 kΩ ± 1% 10 µV CO = 5 pF, A-Curve Voltage gain G V1 VD = 2.0 V, RD = 2.2 kΩ ± 1% −7.5 −4.7 dB CO = 5 pF, eG = 10 mV, f = 1 kHz GV2 VD = 12 V, RD = 2.2 kΩ ± 1% −4.0 −1.5 CO = 5 pF, eG = 10 mV, f = 1 kHz CO = 5 pF, eG = 10 mV, f = 1 kHz CO = 5 pF, eG = 10 mV, f = 1 kHz to 70 Hz Voltage gain difference GV2 − GV1 04 . 0 d B GV1 − GV3 01 . 7 I Electrical Characteristics Ta = 25°C ± 3°C Note) *: ∆GV. f is assured for AQL 0.065%. (the measurement method is used by source-grounded circuit.) –0.05 +0.10 0.40 –0.01 +0.02 0.12 5.8±0.2 2.9±0.2 1.9±0.1 (0.95) (0.5)(0.95) 10˚
PD Ta ID VDS ID VGS 01 0 826 4 1.6 1.4 1.2 1.0 0.8 0.6 0.2 0.4 Drain-source voltage VDS (V) Drain current ID (mA) Ta = 25°C VGS = 0.4 V 0.1 V 0 V 0.3 V − 0.1 V 0.2 V 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 VDS = 2 V Ta = 25°C Gate-source voltage VGS (V) Forward transadmittance Yfs (mS) 0 40 120 140 80 16020 100 60 250 200 150 100 Ambient temperature Ta (°C) Allowable power dissipation PD (mW) 0.30 0.25 0.20 0.15 0.10 0.05 VDS = 2 V Gate-source voltage VGS (V) Drain current ID (mA) 25°C −25°C Ta = 75°C 0 20020 80 140 150 1601201006040 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 VDS = 2 V Drain current ID (µA) Forward transadmittance Yfs (mS)
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