2SK3412

2SK3412 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive. unit : mm 2092B [2SK3412] 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 6.5 2.3 0.5 1.55.5 0.8 7.0 1.2 2.5 5.0 0.85 0.5 1.2 0 to 0.2 2.3 2.3 0.6

No.7176-2/4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 60 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 14 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 52 A Allowable Power Dissipation P D Tc=25°C2 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0 60 V Zero-Gate Voltage Drain Current I DSS VDS =60V, VGS =0 10 µA Gate-to-Source Leakage Current I GSS VGS =±16V, VDS =0 ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 1.0 2.4 V Forward Transfer Admittance yfs VDS =10V, ID =7A 8 11 S R DS (on)1 I D =7A, VGS =10V 48 62 m ΩStatic Drain-to-Source On-State Resistance R DS (on)2 I D =7A, VGS =4V 64 90 m Ω Input Capacitance Ciss V DS =20V, f=1MHz 550 pF Output Capacitance Coss V DS =20V, f=1MHz 170 pF Reverse Transfer Capacitance Crss V DS =20V, f=1MHz 60 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 9 ns Rise Time t r See specified Test Circuit. 12 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 95 ns Fall Time t f See specified Test Circuit. 20 ns Total Gate Charge Qg V DS =10V, VGS =10V, ID =14A 19 nC Gate-to-Source Charge Qgs V DS =10V, VGS =10V, ID =14A 3 nC Gate-to-Drain “Miller” Charge Qgd V DS =10V, VGS =10V, ID =14A 4.2 nC Diode Forward Voltage V SD IS=14A, VGS =0 0.94 1.2 V Switching Time Test Circuit PW=10 µs D.C.≤1% 10V VIN P. G 50Ω G S ID =7A R L=4.29Ω VDD =30V VOUTVIN D 2SK3412

No.7176-3/4 100 120 100 120 --60 --40 --20 0 20 40 60 80 100 120 140 024 8 6 1 01 21 41 61 82 0 ID -- VDS IT04183 IT04185 IT04184 IT04186 R DS (on) -- VGS ID -- VGS R DS (on) -- Tc Ta=75 Ta= --25 Tc=25°C ID =7A ID=7A, V GS=4V ID=7A, VGS =10V --25 V DS =10V Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Case Temperature, Tc -- °C 100 0 1 02 03 04 05 06 0 1000 100 0.1 23 5 7 1.0 23 5 7 10 23 5 100 1.0 0.1 0.01 IT04187 IT04188 IT04190 yfs -- ID IF -- VSD Ciss, Coss, Crss -- VDS IT04189 SW Time -- ID 1.0 0.1 0.01 Tc=75 --25 V GS =0 V DD =30V V GS =10V td(on) td(off) tf tr Tc= --25 25°C 75°C V DS =10V f=1MHz Ciss Crss Coss Drain Current, ID -- A Switching Time, SW Time -- ns Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Forward Current, IF -- A Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF V GS =2.5V 3.5V 3.0V 4.0V5.0V 10.0V 6.0V 8.0V

No.7176-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2002. Specifications and information herein are subject to change without notice. PS 0.1 1.0 100 02468 1 0 1 2 1 4 1 6 1 8 2 0 IT04192 A S O 0.1 2 3 57 2 3 57 2 3 571.0 10 100 IT04191 VGS -- Qg V DS =10V ID =14V IDP =52A ID =14A DC Operation ≤10µs 100 µs1ms 10ms 100ms Operation in this area is limited by RDS (on). IT04194 PD -- Tc 0 20 40 60 80 100 120 140 160 IT04193 PD -- Ta 0 20 40 60 80 100 120 140 160 0.2 1.0 0.8 0.6 0.4 1.2 Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Tc=25°C Single pulse