2SK3363-01 FUJI

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UPS (Uninterruptible Power Supply) DC-DC converters Equivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Gate(G) Source(S) Drain(D) Item Symbol Test Conditions Zero gate voltage drain current IDSS V DS =30V VGS =±16V ID =50A VGS =4V ID =50A VGS =10V ID =50A VDS =25V VCC =15V ID =100A VGS =10V R GS =10 W Min. Typ. Max. Units V V µA mA nA m W S pF A V ns µC ns Min. Typ. Max. Units Thermal resistance R th(ch-c) channel to case R th(ch-a) channel to ambient 1.56 75.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs C iss Coss C rss td(on) tr td(off) tf IAV V SD trr Q rr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D =1mA VGS =0V ID =1mA VDS =VGS Tch=25°C V GS =0V Tch=125°C VDS =0V VDS =25V VGS =0V f=1MHz L=100µH Tch=25°C IF=50A VGS =0V Tch=25°C IF=50A VGS =0V -di/dt=100A/µs Tch=25°C V A A V mJ W *1 L=0.925mH, Vcc=12V 1.0 1.5 2.0 10 500 0.2 1.0 10 100 8.0 10.5 5.3 6.8 35 70 3900 5850 2000 3000 850 1280 17 30 70 110 250 380 180 270 1.0 1.5 0.12 -55 to +150 TO-220AB 3. Source

0.1 100 Typical transfer characteristics ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C ID [A] VGS [V] Characteristics 2SK3363-01 FUJI POWER MOSFET 0 25 50 75 100 125 150 100 Power Dissipation PD=f(Tc) PD [W] Tc [°C] 310 ID [A] VDS [V] Safe operating area ID=f(VDS):D=0.01,Tc=25°C 1µs 10µs 1ms 10ms 100ms 100µs D.C. 012345 100 150 200 3.0V 2.0V 2.5V 4.0V 3.5V 4.5V 10V VGS=15V Typical output characteristics ID=f(VDS):80µs pulse test,Tc=25°C ID [A] VDS [V] 310 Typical forward transconductance gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C gfs [s] ID [A] 0 50 100 150 200 VGS= 2.0V RDS(on) [mW ] ID [A] Typical Drain-Source on-State Resistance RDS(on)=f(ID):80µs pulse test,Tch=25°C 10V 15V 4.5V 4.0V 3.5V 3.0V2.5V t TD= t T

Vcc=24V Typical Gate Charge Characteristics VGS=f(Qg):ID=100A,Tch=25°C VDS [V] VGS [V] Q g [nC] VGS VDS 2SK3363-01 FUJI POWER MOSFET -50 0 50 100 150 max. typ. Drain-source on-state resistance RDS(on)=f(Tch):ID=50A,VGS=10V RDS(on)[mW ] Tch [°C] -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 max. typ. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA VGS(th) [V] Tch [°C] 100p 10n 100n Typical capacitances C=f(VDS):VGS=0V,f=1MHz C [F] VDS [V] Ciss Coss Crss 100 120 140 160 180 200 220 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test,Tch=25°C 10V 5V VGS=0V IF [A] VSD [V] t-ID10 t [ns] ID [A] td(off) tf tr td(on) Typical Switching Characteristics vs. ID t=f(ID):Vcc=15V,VGS=10V,RG=10 W

D=0.5 0.2 0.02 0.05 0.1 0.01 Transient thermal impedance Zthch=f(t) parameter:D=t/T Zthch-c [K/W] t [s] 2SK3363-01 FUJI POWER MOSFET 0 50 100 1500 Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch) I(AV) [A] Starting Tch [°C] 0 50 100 150 250 500 750 1000 1250 1500 1750 2000 Maximum Avalanche energy vs. starting Tch Eas=f(starting Tch):Vcc=12V, I(AV)<=50A Eas [mJ] Starting Tch [°C] t T t T