2SK3352_05 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive.
  • DC / DC converter applications. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 30 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 45 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 80 A Allowable Power Dissipation P D 1.65 W Tc=25˚C 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 30 V Zero-Gate Voltage Drain Current I DSS VDS =30V, VGS =0V 1 µA Gate-to-Source Leakage Current I GSS VGS =±16V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 1.0 2.4 V Forward Transfer Admittance yfs VDS =10V, ID =20A 19 27 S Static Drain-to-Source On-State Resistance R DS (on)1 I D =20A, VGS =10V 11 15 m Ω R DS (on)2 I D =10A, VGS =4.5V 15 21 m Ω Input Capacitance Ciss V DS =10V, f=1MHz 1400 pF Output Capacitance Coss V DS =10V, f=1MHz 420 pF Reverse Transfer Capacitance Crss V DS =10V, f=1MHz 210 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 14 ns Rise Time t r See specified Test Circuit. 530 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 100 ns Fall Time t f See specified Test Circuit. 150 ns Marking : K3352 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. 62005QA MS IM TA-2658 2SK3352 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

No.8125-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Total Gate Charge Qg V DS =10V, VGS =10V, ID =20A 28 nC Gate-to-Source Charge Qgs V DS =10V, VGS =10V, ID =20A 4.6 nC Gate-to-Drain Charge Qgd V DS =10V, VGS =10V, ID =20A 5 nC Diode Forward Voltage V SD IS=45A, VGS =0V 1.0 1.2 V Package Dimensions Package Dimensions unit : mm unit : mm 7513-002 7001-003 Package Dimensions Switching Time Test Circuit unit : mm 7042-001 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FA 123 1.2 2.55 2.55 10.2 4.5 1.3 0.8 0.4 9.9 8.8 2.0 4.5 1.6 0.8 1.5 2.5 2.55 2.55 2.7 PW=10 µs D.C.≤1% 10V VIN VIN P.G 50Ω G S ID =20A R L=0.75Ω VDD =15V VOUTD 2SK3352 10.2 8.811.0 2.7 11.5(9.4) 20.9 1.6 0.2 1.3 4.5 0.8 0.4 123 2.552.55 1.2 1 : Gate 2 : Drain 3 : Source SANYO : SMP 10.2 8.8 1.5MAX2.7 9.93.0 0.2 1.3 4.5 0.8 1.35 0.4 1.4 1.2 2.552.55 0 to 0.3 12 3 2.552.55 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD

No.8125-3/4 0.01 0.1 1.0 100 --25 °CTc=75 - -75 - -50 - -25 0 25 50 75 100 125 175 1500 2 4 6 8 1 01 21 41 61 82 0 R DS (on) -- VGS IT07199 0.2 ID -- VDS IT02766 ID -- VGS IT02767 R DS (on) -- Tc IT07200 V GS =2.5V 10.0V 6.0V 4.5V 3.0V3.5V 8.0V V DS =10V --25 Tc=75 Tc=25°C 10A ID =20A ID=10A, V GS=4.5V ID =20A, VGS =10V Ciss, Coss, Crss -- VDS IT02773 IT02770 0.01 0.1 0.001 23 5 7 0.01 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 1.0 100 yfs -- ID IT02771 IS -- VSD V DS =10V 75°C Tc= --25 V GS =0V SW Time -- ID IT02772 0 5 10 15 20 25 30 100 1000 10000 0.1 23 5 7 1.0 23 5 7 10 23 100 1000 V DS =15V V GS =10V 25°C td(on) td(off) tr tf f=1MHz Ciss Coss Crss Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Case Temperature, Tc -- °CGate-to-Source V oltage, VGS -- V Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Source Current, IS -- A Drain-to-Source V oltage, VDS -- VDrain Current, ID -- A Switching Time, SW Time -- ns Ciss, Coss, Crss -- pF

No.8125-4/4PS 0 20 40 60 80 100 120 140 160 IT08369 0.01 0.1 1.0 100 0.01 23 5 723 5 7 1.023 5 70.1 23 5 7 IT08368 20 40 60 80 100 120 140 160 IT08370 DC operation 10ms Operation in this area is limited by RDS (on). IDP =80A ID =45A <10µs 100ms 1ms 100µs IT07201 0 2 4 6 8 1 01 21 41 61 82 02 22 42 62 8 V DS =10V ID =20A PD -- Ta P D -- Tc A S OVGS -- Qg Gate-to-Source V oltage, VGS -- V Amibient Tamperature, Ta -- °C Allowable Power Dissipation, PD -- W Case Tamperature, Tc -- °C Allowable Power Dissipation, PD -- W Drain Current, ID -- A Total Gate Charge, Qg -- nC Drain-to-Source V oltage, V DS -- V Tc=25°C Single pulse 1.0 0.5 1.5 1.65 2.0 PD -- Ta Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. Note on usage : Since the 2SK3352 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.