2SK3341-01 FUJI

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UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS =900V VGS =±30V ID =5A VGS =10V ID =5A VDS =25V VCC =600V ID =10A VGS =10V R GS =10 W Min. Typ. Max. Units V V µA mA nA W S pF nC A V µs µC ns Min. Typ. Max. Units Thermal resistance R th(ch-c) channel to case R th(ch-a) channel to ambient 0.403 50.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs C iss Coss C rss td(on) tr td(off) tf Q G Q GS Q GD IAV V SD trr Q rr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Total gate charge Gate-Source charge Gete-Drain charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D =1mA VGS =0V ID =1mA VDS =VGS Tch=25°C VGS =0V Tch=125°C VDS =0V VDS =25V VGS =0V f=1MHz Vcc=450V ID =10A VGS =10V L=11.9mH Tch=25°C IF=2xIDR VGS =0V Tch=25°C IF=IDR VGS =0V -dIF/dt=100A/µs Tch=25°C V A A V A mJ W *1 L=11.9mH, Vcc=90V *2 Tch=150°C 900 2.5 3.0 3.5 10 500 0.2 1.0 10 100 0.92 1.2 3.5 7 2200 3300 240 360 115 173 28 42 70 105 220 330 90 135 120 180 36 54 40 60 1.00 1.50 1.8 21.0 -55 to +150 Equivalent circuit schematic Gate(G) Source(S) Drain(D)

2SK3341-01 FUJI POWER MOSFET 0 25 50 75 100 125 150 100 150 200 250 300 350 400 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 100ms 10ms 1ms 100ms 10ms Safe operating area ID=f(VDS):Single Pulse,Tc=25°C 1ms D.C. ID [A] VDS [V] 0 2 4 6 8 10 12 14 16 18 20 22 24 26 6.5V 20V 10V 6.0V 5.5V 5.0V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80µs pulse test,Tch=25°C VGS=4.5V 012345678 0.01 0.1 ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C 0.1 1 10 0.1 gfs [S] ID [A] Typical Transconductance gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 6.5V RDS(on) [W ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs pulse test,Tch=25°C 10V 20V 6.0V5.5V5.0V VGS= 4.5V t TD= t T

Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10 W td(on) tr tf td(off) t [ns] ID [A] 2SK3341-01 FUJI POWER MOSFET -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RDS(on) [W ] Tch [°C] typ.max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 max. typ. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA VGS(th) [V] Tch [°C] 0 50 100 150 200 250 Qg [C] Typical Gate Charge Characteristics VGS=f(Q g):ID=10A,Tch=25°C VGS [V] 720V 450V Vcc= 180V -11 -10 C [F] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test,Tch=25°C

2SK3341-01 FUJI POWER MOSFET 0 25 50 75 100 125 150 100 200 300 400 500 600 700 800 EAV [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=90V,I(AV)<=10A Transient Thermal impedance Zth(ch-c)=f(t) parameter:D=t/T Zth(ch-c) [K/W] t [s] 0.5 0.2 0.02 0.05 0.1 0.01 0 t T t T