2SK3340-01 FUJI

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UPS (Uninterruptible Power Supply) DC-DC converters Equivalent circuit schematic Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS =400V VGS =±30V ID =11.5A VGS =10V ID =11.5A VDS =25V VCC =300V ID =23A VGS =10V R GS =10 W Min. Typ. Max. Units V V µA mA nA W S pF nC A V ns µC ns Min. Typ. Max. Units Thermal resistance R th(ch-c) channel to case R th(ch-a) channel to ambient 0.424 50.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs C iss Coss C rss td(on) tr td(off) tf Q G Q GS Q GD IAV V SD trr Q rr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Total gate charge Gate-Source charge Gete-Drain charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D =1mA VGS =0V ID =1mA VDS =VGS Tch=25°C VGS =0V Tch=125°C VDS =0V VDS =25V VGS =0V f=1MHz Vcc=200V ID =23A VGS =10V L=1.89mH Tch=25°C IF=2xIDR VGS =0V Tch=25°C IF=IDR VGS =0V -di/dt=100A/µs Tch=25°C V A A V A mJ W *1 L=1.89mH, Vcc=40V *2 Tch=150°C 400 2.5 3.0 3.5 10 500 0.2 1.0 10 100 0.16 0.2 8.5 17 2650 3975 500 750 230 345 22 35 105 160 225 340 120 180 137 210 36 55 48 75 1.15 1.73 450 8.6 -55 to +150 Gate(G) Source(S) Drain(D)

2SK3340-01 FUJI POWER MOSFET 0 25 50 75 100 125 150 100 150 200 250 300 350 400 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 100ms 10ms 1ms 100ms 10ms Safe operating area ID=f(VDS):Single Pulse,Tc=25°C 1ms D.C. ID [A] VDS [V] 02468 1 0 1 2 1 4 20V 10V 15V 6.5V 6.0V 5.5V 5.0V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80µs pulse test,Tch=25°C VGS=4.5V 012345678 0.1 100 ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C 0.1 1 10 100 0.1 100 gfs [S] ID [A] Typical Transconductance gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C 0 1 02 03 04 05 06 00.0 0.1 0.2 0.3 0.4 0.5 RDS(on) [W ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs pulse test,Tch=25°C 15V 10V 20V 6.5V 6.0V 5.5V5.0VVGS=4.5V t T t T

2SK3340-01 FUJI POWER MOSFET -50 -25 0 25 50 75 100 125 1500.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 RDS(on) [W ] Tch [°C] typ.max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=11.5A,VGS=10V -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 max. typ. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA VGS(th) [V] Tch [°C] 0 50 100 150 200 250 300 Qg [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=23A,Tch=25°C VGS [V] 320V 200V Vcc= 80V -11 -10 C [F] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test,Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 td(on) tr tf td(off) t [ns] ID [A] W

2SK3340-01 FUJI POWER MOSFET 0 25 50 75 100 125 150 100 200 300 400 500 600 EAV [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=40V,I(AV)<=23A Transient Thermal impedance Zth(ch-c)=f(t) parameter:D=t/T Zth(ch-c) [K/W] t [s] 0.5 0.2 0.02 0.05 0.1 0.01 0 t TD= t T