2SK3339-01 FUJI

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UPS (Uninterruptible Power Supply) DC-DC converters Equivalent circuit schematic Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS =500V VGS =±30V ID =13.5A VGS =10V ID =13.5A VDS =25V VCC =300V ID =27A VGS =10V R GS =10 W Min. Typ. Max. Units V V µA mA nA W S pF nC A V ns µC ns Min. Typ. Max. Units Thermal resistance R th(ch-c) channel to case R th(ch-a) channel to ambient 0.3125 50.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs C iss Coss C rss td(on) tr td(off) tf Q G Q GS Q GD IAV V SD trr Q rr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Total gate charge Gate-Source charge Gete-Drain charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D =1mA VGS =0V ID =1mA VDS =VGS Tch=25°C VGS =0V Tch=125°C VDS =0V VDS =25V VGS =0V f=1MHz Vcc=250V ID =27A VGS =10V L=2.30mH Tch=25°C IF=2xIDR VGS =0V Tch=25°C IF=IDR VGS =0V -di/dt=100A/µs Tch=25°C V A A V A mJ W *1 L=2.30mH, Vcc=50V *2 Tch=150°C 500 2.5 3.0 3.5 10 500 0.2 1.0 10 100 0.16 0.2 11 22 4300 6450 630 945 285 430 40 60 145 220 315 475 150 225 198 300 38 60 81 125 1.2 1.8 660 15.0 -55 to +150 Gate(G) Source(S) Drain(D)

2SK3339-01 FUJI POWER MOSFET 0 25 50 75 100 125 150 100 200 300 400 500 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 100ms 10ms 1ms 100µs 10µs Safe operating area ID=f(VDS):Single Pulse,Tc=25°C 1µs D.C. ID [A] VDS [V] 0 2 4 6 8 10 12 14 16 20V 10V 15V 6.5V 6.0V 5.5V 5.0V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80µs pulse test,Tch=25°C 4.5V VGS=4.0V 012345678 0.1 100 ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C 0.1 1 10 100 0.1 100gfs [S] ID [A] Typical Transconductance gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C 0 1 02 03 04 05 06 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6RDS(on) [ W ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs pulse test,Tch=25°C 15V 10V 20V 6.5V 6.0V 5.5V 5.0VVGS=4.5V t TD= t T

2SK3339-01 FUJI POWER MOSFET -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 RDS(on) [ W ] Tch [°C] typ.max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=13.5A,VGS=10V -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 max. typ. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA VGS(th) [V] Tch [°C] 0 50 100 150 200 250 300 350 Qg [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=27A,Tch=25°C VGS [V] 400V 250V Vcc= 100V -11 -10 C [F] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test,Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 W td(on) tr tf td(off) t [ns] ID [A]

Transient Thermal impedance Zth(ch-c)=f(t) parameter:D=t/T Zth(ch-c) [K/W] t [s] 0.5 0.2 0.02 0.05 0.1 0.01 2SK3339-01 FUJI POWER MOSFET 0 25 50 75 100 125 150 200 400 600 800

1000 EAV [mJ]

starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)<=27A t TD= t T