2SK3338-01 FUJI

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UPS (Uninterruptible Power Supply) DC-DC converters Equivalent circuit schematic Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS =500V VGS =±30V ID =10A VGS =10V ID =10A VDS =25V VCC =300V ID =20A VGS =10V R GS =10 W Min. Typ. Max. Units V V µA mA nA W S pF nC A V ns µC ns Min. Typ. Max. Units Thermal resistance R th(ch-c) channel to case R th(ch-a) channel to ambient 0.368 50.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs C iss Coss C rss td(on) tr td(off) tf Q G Q GS Q GD IAV V SD trr Q rr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Total gate charge Gate-Source charge Gete-Drain charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D =1mA VGS =0V ID =1mA VDS =VGS Tch=25°C VGS =0V Tch=125°C VDS =0V VDS =25V VGS =0V f=1MHz Vcc=250V ID =20A VGS =10V L=3.56 mH Tch=25°C IF=2xIDR VGS =0V Tch=25°C IF=IDR VGS =0V -di/dt=100A/µs Tch=25°C V A A V A mJ W *1 L=3.56mH, Vcc=50V *2 Tch=150°C 500 2.5 3.0 3.5 10 500 0.2 1.0 10 100 0.21 0.27 91 8 3350 5025 480 720 200 300 27 40 100 150 250 375 100 150 155 235 38 60 50 75 1.1 1.65 600 11.0 -55 to +150 Gate(G) Source(S) Drain(D)

2SK3338-01 FUJI POWER MOSFET 0 25 50 75 100 125 150 100 200 300 400 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 100ms 10ms 1ms 100µs 10µs Safe operating area ID=f(VDS):Single Pulse,Tc=25°C 1µs D.C. ID [A] VDS [V] 02468 1 0 1 2 1 4 1 6 1 8 2 0 2 2 2 4 20V 10V 15V 6.5V 6.0V 5.5V 5.0V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80µs pulse test,Tch=25°C VGS=4.5V 012345678 0.1 100 ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C 0.1 1 10 100 0.1 100gfs [S] ID [A] Typical Transconductance gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C 0 1 02 03 04 05 06 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6RDS(on) [ W ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs pulse test,Tch=25°C 15V 10V 20V 6.5V 6.0V5.5V5.0VVGS=4.5V t T t T

2SK3338-01 FUJI POWER MOSFET -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 RDS(on) [ W ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=10A,VGS=10V -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 max. typ. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA VGS(th) [V] Tch [°C] 0 50 100 150 200 250 300 350 Qg [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=20A,Tch=25°C VGS [V] 400V 250V Vcc= 100V -11 -10 C [F] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test,Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 td(on) tr tf td(off) t [ns] ID [A] W

2SK3338-01 FUJI POWER MOSFET 0 25 50 75 100 125 150 200 400 600 800

1000 EAV [mJ]

starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)<=20A Transient Thermal impedance Zth(ch-c)=f(t) parameter:D=t/T Zth(ch-c) [K/W] t [s] 0.5 0.2 0.02 0.05 0.1 0.01 0 t TD= t T