2SK3337-01 FUJI

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UPS (Uninterruptible Power Supply) DC-DC converters Equivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Gate(G) Source(S) Drain(D) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS =1000V VGS =±30V ID =3.5A VGS =10V ID =3.5A VDS =25V VCC =600V ID =7A VGS =10V R GS =10 W Min. Typ. Max. Units V V µA mA nA W S pF nC A V µs µC ns Min. Typ. Max. Units Thermal resistance R th(ch-c) channel to case R th(ch-a) channel to ambient 0.490 50.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs C iss Coss C rss td(on) tr td(off) tf Q G Q GS Q GD IAV V SD trr Q rr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Total gate charge Gate-Source charge Gete-Drain charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D =1mA VGS =0V ID =1mA VDS =VGS Tch=25°C VGS =0V Tch=125°C VDS =0V VDS =25V VGS =0V f=1MHz Vcc=500V ID =7A VGS =10V L=17.3 mH Tch=25°C IF=2xIDR VGS =0V Tch=25°C IF=IDR VGS =0V -di/dt=100A/µs Tch=25°C V A A V A mJ W *1 L=17.3mH, Vcc=100V *2 Tch=150°C 100 2.5 3.0 3.5 10 500 0.2 1.0 10 100 1.54 2.0 2.7 5.5 1480 2220 170 255 75 113 25 38 50 75 160 240 70 105 84 126 23 35 31 47 1.00 1.50 1.6 15.0 -55 to +150

2SK3337-01 FUJI POWER MOSFET 0 25 50 75 100 125 150 100 150 200 250 300 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 310 100ms 10ms 1ms 100µs 10µs Safe operating area ID=f(VDS):Single Pulse,Tc=25°C 1µs D.C. ID [A] VDS [V] 0 2 4 6 8 1 01 21 41 61 82 02 22 42 6 20V 10V 6.0V 5.5V 5.0V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80µs pulse test,Tch=25°C VGS=4.5V 012345678 0.01 0.1 ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C 0.1 1 10 0.1 gfs [S] ID [A] Typical Transconductance gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C 0 2 4 6 8 10 12 14 16 RDS(on) [ W ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs pulse test,Tch=25°C 10V 20V 6.0V 5.5V5.0VVGS=4.5V t TD= t T

Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10 td(on) tr tf td(off) t [ns] ID [A] 2SK3337-01 FUJI POWER MOSFET W -50 -25 0 25 50 75 100 125 150 RDS(on) [ W ] Tch [°C] typ.max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3.5A,VGS=10V -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 max. typ. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA VGS(th) [V] Tch [°C] 0 50 100 150 200 Qg [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=7A,Tch=25°C VGS [V] 800V 500V Vcc= 200V 210 -11 -10 C [F] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test,Tch=25°C

Transient Thermal impedance Zth(ch-c)=f(t) parameter:D=t/T Zth(ch-c) [K/W] t [s] 0.5 0.2 0.02 0.05 0.1 0.01 2SK3337-01 FUJI POWER MOSFET 0 25 50 75 100 125 150 100 200 300 400 500 EAV [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=100V,I(AV)<=7A t TD= t T