2SK3299 NEC

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© 1999,2000 MOS FIELD EFFECT TRANSISTOR 2SK3299 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Document No. D14060EJ1V0DS00 (1st edition) Date Published April 2000 NS CP(K) Printed in Japan DATA SHEET The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. The mark  shows major revised points.

DESCRIPTION

The 2SK3299 is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter.

FEATURES

  • Low gate charge QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A)
  • Gate voltage rating ±30 V
  • Low on-state resistance RDS(on) = 0.75 Ω MAX. (VGS = 10 V, ID = 5.0 A)
  • Avalanche capability ratings
  • Surface mount package available ABSOLUTE MAXIMUM RATINGS (T A = 25°C) Drain to Source Voltage (VGS = 0 V) V DSS 600 V Gate to Source Voltage (VDS = 0 V) V GSS ±30 V Drain Current (DC) (TC = 25°C) I D(DC) ±10 A Drain Current (Pulse) Note1 ID(pulse) ±40 A Total Power Dissipation (TA = 25°C) P T1 1.5 W Total Power Dissipation (TC = 25°C) P T2 75 W Channel Temperature T ch 150 °C Storage Temperature T stg −55 to +150 °C Single Avalanche Current Note2 IAS 10 A Single Avalanche Energy Note2 EAS 66.7 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V

ORDERING INFORMATION

Data Sheet D14060EJ1V0DS002 2SK3299 ELECTRICAL CHARACTERISTICS(T A = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Leakage Current I DSS VDS = 600 V, VGS = 0 V 100 µA Gate Leakage Current I GSS VGS = ±30 V, VDS = 0 V ±100 nA Gate Cut-off Voltage V GS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V Forward Transfer Admittance | y fs |V DS = 10 V, ID = 5.0 A 3.2 S Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 5.0 A 0.68 0.75 Ω Input Capacitance C iss VDS = 10 V 1580 pF Output Capacitance C oss VGS = 0 V 280 pF Reverse Transfer Capacitance C rss f = 1 MHz 25 pF Turn-on Delay Time t d(on) VDD = 150 V, ID = 5.0 A 27 ns Rise Time t r VGS(on) = 10 V 17 ns Turn-off Delay Time t d(off) R G = 10 Ω 66 ns Fall Time t f 24 ns Total Gate Charge Q G VDD = 450 V 34 nC Gate to Source Charge Q GS VGS = 10 V 8.2 nC Gate to Drain Charge Q GD ID = 10 A 12.3 nC Diode Forward Voltage V F(S-D) IF = 10 A, VGS = 0 V 1.0 V Reverse Recovery Time t rr IF = 10 A, VGS = 0 V 1.9 µs Reverse Recovery Charge Q rr di/dt = 50 A/µs 12 µC TEST CIRCUIT 1 AVALANCHE CAPABILITY R G = 25 Ω 50 Ω PG. L VDD VGS = 20 → 0 V BV DSSIAS ID VDS Starting Tch VDD D.U.T. TEST CIRCUIT 3 GATE CHARGE TEST CIRCUIT 2 SWITCHING TIME PG. R G VGS D.U.T. R L VDD τ = 1 sµ Duty Cycle ≤ 1 % VGS Wave Form ID Wave Form VGS 10 % 90 %VGS (on) 10 %0 ID 90 % 90 % td(on) tr td(off) t f 10 % τ ID ton toff PG. 50 Ω D.U.T. R L VDD IG = 2 mA

Data Sheet D14060EJ1V0DS00 3 2SK3299 TYPICAL CHARACTERISTICS (T A = 25 °C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A 100 4020 30 6.0 V VGS = 10 V 8.0 V Pulsed FORWARD TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - A 151050 100 0.1 0.01 VDS = 10 V Pulsed 25 ˚C −25 ˚C Tch = 125 ˚C 75 ˚C GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C VGS(off) - Gate to Source Cutoff Voltage - V −50 0 50 100 150 5.0 4.0 3.0 2.0 1.0 VDS = 10 V ID = 1 mA FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1 100 10 ID - Drain Current - A | yfs | - Forward Transfer Admittance - S 100 0.1 0.1 VDS = 10 V Pulsed Tch = −25 ˚C 25 ˚C 75 ˚C 125 ˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 2.0 VGS - Gate to Source Voltage - V R DS (on) - Drain to Source On-State Resistance - Ω 1.0 51 50

3.0 Pulsed

ID = 10 A 5.0 A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1.0 1.0 10 100 ID - Drain Current - A R DS(on) - Drain to Source On-State Resistance - Ω 2.0 3.0 Pulsed VGS = 10 V 20 V 

Data Sheet D14060EJ1V0DS004 2SK3299 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50 150 R DS (on) - Drain to Source On-state Resistance - W 2.0 0 100-50 Tch - Channel Temperature - ˚C 3.0 1.0 VGS = 10 V 5.0 A Pulsed ID = 10 A SOURCE TO DRAIN DIODE FORWARD VOLTAGE VSD - Source to Drain Voltage - V ISD - Diode Forward Current - A 1.51.00.50 100 0.1

0.01 Pulsed

VGS = 10 V 10001001010.1 10000 1000 100 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE C iss, Coss, Crss - Capacitance - pF VGS = 0 V f=1 MHz VDS - Drain to Source Voltage - V C iss C oss C rss SWITCHING CHARACTERISTICS 0.1 1 10 100 ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 100 0.1 VDD = 150 V VGS = 10 V R G = 10 Ω td(off) td(on)tf tr REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 10 100 trr - Reverse Recovery Time - s 0.1 ID - Drain Current - A 0.1 0.01 di/dt = 50 A/ s VGS = 0 V µ µ Q G - Gate Charge - nC VDS - Drain to Source Voltage - V 002 0 10 30 40 800 600 400 200 DYNAMIC INPUT/OUTPUT CHARACTERISTICS VGS - Gate to Source Voltage - V ID = 10 A VGS VDD = 450 V 300 V 150 V VDS

Data Sheet D14060EJ1V0DS00 5 2SK3299 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA Tch - Channel Temperature - ˚C dT - Percentage of Rated Power - % 04 020 60 100 140 80 120 160 100 TC - Case Temperature - ˚C PT - Total Power Dissipation - W 00 8020 40 60 100 140 120 160 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE FORWARD BIAS SAFE OPERATING AREA 10 100 1 000 ID - Drain Current - A VDS - Drain to Source Voltage - V 100 0.1 Power Dissipation Limited 100 µs 10 ms 1 ms 100 ms PW = 10 µs ID(pulse) ID(DC) 3 ms 30 ms TC = 25˚C Single Pulse RDS(on) Limited TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s R th(t) - Transient Thermal Resistance - ˚C/W 100m 1 10 100 1 00010m1m10010 100 0.1 0.01 R th(CH-A) = 83.3 ˚C/W R th(CH-C) = 1.67 ˚C/W µ µ

Data Sheet D14060EJ1V0DS006 2SK3299 SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 100 1m 10m 100 L - Inductive Load - H IAS - Single Avalanche Energy - mJ 1.0 0.1 10µµ R G = 25 Ω VDD = 150 V VGS = 20 V → 0 V Starting Tch = 25 ˚C EAS = 66.7 mJ IAS = 10 A SINGLE AVALANCHE ENERGY DERATING FACTOR 75 150 125 Starting Tch - Starting Channel Temperature - ˚C Energy Defrating Factor - % 50 10025 VDD = 150 V R G = 25 Ω VGS = 20 V→ 0 V IAS ≤ 10 A 100 120

Data Sheet D14060EJ1V0DS00 7 2SK3299 PACKAGE DRAWINGS (Unit : mm) 1)TO-220AB (MP-25) 2)TO-262 (MP-25 Fin Cut) 3)TO-263 (MP-25ZJ) EQUIVALENT CIRCUIT Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 3 10.6 MAX. 10.0 3.6±0.2 4 3.0±0.3 1.3±0.2 0.75±0.1 2.54 TYP. 2.54 TYP. 5.9 MIN.6.0 MAX. 15.5 MAX.12.7 MIN. 1.3±0.2 0.5±0.2 2.8±0.2 φ 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 3 (10) 1.3±0.2 0.75±0.3 2.54 TYP. 2.54 TYP. 8.5±0.212.7 MIN. 1.3±0.2 0.5±0.2 2.8±0.2 1.0±0.5 (10) 1.4±0.2 1.0±0.5 2.54 TYP. 2.54 TYP. 8.5±0.2 123 5.7±0.4 2.8±0.2 4.8 MAX. 1.3±0.2 0.5±0.2 (0.5R) (0.8R) 1.Gate 2.Drain 3.Source 4.Fin (Drain) 0.7±0.2 Body Diode Source (S) Drain (D) Gate (G)

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