2SK3284 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Low ON-resistance.
  • Low Qg.
  • Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 400 V Gate-to-Source Voltage V GSS ±30 V Drain Current (DC) I D 10 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 40 A Allowable Power Dissipation P D Tc=25°C5 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 400 V Zero-Gate Voltage Drain Current I DSS VDS =320V, VGS =0V 1.0 mA Gate-to-Source Leakage Current I GSS VGS =±30V, VDS =0V ±100 nA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 3 4 V Forward Transfer Admittance yfs VDS =10V, ID =6A 2.9 5.8 S Static Drain-to-Source On-State ResistanceR DS (on) I D =6A, VGS =15V 0.43 0.55 Ω Input Capacitance Ciss V DS =20V, f=1MHz 1150 pF Output Capacitance Coss V DS =20V, f=1MHz 350 pF Reverse Transfer Capacitance Crss V DS =20V, f=1MHz 150 pF Total Gate Charge Qg V DS =200V, VGS =10V, ID =10A 40 nC Turn-ON Delay Time t d(on) See specified Test Circuit. 17 ns Rise Time t r See specified Test Circuit. 30 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 150 ns Fall Time t f See specified Test Circuit. 50 ns Diode Forward Voltage V SD IS=10A, VGS =0V 1.2 V Note) Although the protection diode is contained between gate and source, be careful of handling enough. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. 11006QB MS IM TB-00002033 2SK3284 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

No. A0168-2/4 Package Dimensions unit : mm 7002-001 Switching Time Test Circuit 6.2 7.8 8.2 0.2 0.44.2 1.0 1.0 5.08 2.542.54 8.4 10.0 1.2 0.3 0.6 0.6 0.7 7.8 5.2 6.210.0 6.0 2.5 1 2 1 : Gate 2 : Source 3 : Drain SANYO : ZPPW=1 µs D.C.≤0.5% R GS =50Ω ID =6A R L=33.3Ω VDD =200V VGS =15V 2SK3284P. G G S D VOUT ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A IT10368 IT10369 2468 1 5 1410 121357 1 3 91 1 246 1 0 1 2 81 4 1 6 1 8 2 0 V GS =6V 8V15V 10V V DS =10V Tc= --25°C 25°C 75°C

No. A0168-3/4 IT10377 0.01 1.0 1.0 0.1 100 23 5 7 23 5 7 23 5 710 100 IDP =40A ID =10A DC operation ≤10µs 10µs100 µs1ms 10ms 100ms Operation in this area is limited by RDS (on). 0 5 10 15 20 45 3025 40 35 V DS =200V ID =10A IT10376 A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Tc=25°C Single pulse VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V R DS (on) -- VGS yfs -- ID 0.1 Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Ciss, Coss, Crss -- VDS SW Time -- ID Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Drain Current, ID -- A Switching Time, SW Time -- ns IS -- VSD Diode Forward V oltage, VSD -- V Source Current, IS -- A R DS (on) -- Tc Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Case Temperature, Tc -- °C IT10373 IT10374 1.0 0.1 0.01 1000 100 5 1 01 52 02 53 03 54 04 55 0 IT10375 100 1000 7 1.00.1 23 5 7 23 5 2310 V GS =0V Coss Crss Ciss V DD =200V V GS =15V td(on) td(off) tf tr IT10370 0.2 2.0 1.2 1.4 1.6 1.8 1.0 0.8 0.4 0.6 65 7 8 9 10 11 12 15 1413 ID =6A IT10372 1.0 23 5 7 1.0 10 23 5 23 5 7 V DS =10V Tc=75°C 25°C --25°C Tc=75 --25 Tc= --25 25°C 75°C IT10371 V GS =15V , I D=6A - -60 - -40 - -20 0 20 40 60 80 100 120 160 140 1.0 1.2 1.4 0.2 0.4 0.6 0.8 f=1MHz

No. A0168-4/4PS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2006. Specifications and information herein are subject to change without notice. Note on usage : Since the 2SK3284 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. PD -- Tc Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W IT10378 20 40 60 80 100 120 140 160