2SK3280 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Features
- Low ON-resistance.
- 4V drive.
- Ultrahigh-speed switching. 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP unit:mm 2092B [2SK3280] 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 5.0 6.5 0.85 0.7 0.6 1.55.5 7.0 0.8 1.6 7.5 0.5 1.2 2.3 0.5 1 23 2.3 2.3
No.6436–2/4 Specifications Absolute Maximum Ratings at Ta = 25˚C Electrical Characteristics at Ta = 25˚C Tc=25˚C Switching Time Test Circuit PW £10ms, duty cycle£1% PW=10 µs D.C.≤1% 10V VIN P. G 50Ω G S 2SK3280 ID =10A R L=1.5Ω VDD =15V VOUTVIN D retemaraPl obmySs noitidnoCs gnitaRt inU egatloVecruoS-ot-niarDV SSD 03V egatloVecruoS-ot-etaGV SSG 02±V )CD(tnerruCniarDI D 02A )esluP(tnerruCniarDI PD 54A noitapissiDrewoPelbawollAP D 03W erutarepmeTlennahCh cT 051 erutarepmeTegarotSg tsT 051+ot55– retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am egatloVnwodkaerBecruoS-ot-niarDV SSD)RB( ID V,Am1= SG 0=0 3V tnerruCniarDegatloVetaG-oreZI SSD V SD V,V03= SG 0=1 A µ tnerruCegakaeLecruoS-ot-etaGI SSG V SG V,V61±= SD 0=0 1±A µ egatloVffotuCV SG )ffo(V SD I,V01= D Am1=0 .14 .2V ecnattimdArefsnarTdrawroF| sfy|V SD I,V01= D A01=2 18 1S ecnatsiseRetatS-nOecruoS-ot-niarDcitatS R SD 1)no(I D V,A01= SG V01=5 10 2m W R SD 2)no(I D V,A01= SG V5.4=2 21 3m W ecnaticapaCtupnIs siCV SD zHM1=f,V01=0 001F p ecnaticapaCtuptuOs soCV SD zHM1=f,V01=0 14F p ecnaticapaCrefsnarTesreveRs srCV SD zHM1=f,V01=0 61F p emiTyaleDNO-nruTt )no(d tiucriCtseTdeificepseeS1 1s n emiTesiRt r tiucriCtseTdeificepseeS0 12s n emiTyaleDFFO-nruTt )ffo(d tiucriCtseTdeificepseeS0 8s n emiTllaFt f tiucriCtseTdeificepseeS5 8s n egrahCetaGlatoTg QV SD V,V01= SG I,V01= D A02=7 1C n egrahCecruoS-ot-etaGs gQV SD V,V01= SG I,V01= D A02=3 .3C n egrahC"relliM"niarD-ot-etaGd gQV SD V,V01= SG I,V01= D A02=7 .1C n egatloVdrawroFedoiDV DS IS V,A02= SG 0=0 .12 .1V
No.6436–3/4 --50 75 25 50 150 125100--25 0048 1 2 1 6 2 02 6 10 14 18 Tc=75 --25 R DS (on) -- Tc V GS =4.5V , ID =4A V GS =10.0V , ID =10A R DS (on) -- VGS 10A ID -- VGS V DS =10V ID -- VDS 10.0V 3.0V3.5V V GS =2.5V 6.0V4.5V IT01822 IT01824 IT01823 IT01825 Tc=25°C ID =4A 8.0V Drain Current, ID –A Drain-to-Source Voltage, VDS –V Drain Current, ID –A Gate-to-Source Voltage, VGS –V Gate-to-Source Voltage, VGS –V Static Drain-to-Source On-State Resistance, RDS (on) –m W Static Drain-to-Source On-State Resistance, RDS (on) –m W Case Temperature, Tc – ˚C 10000 100 1000 4 5 6 7 8 9 10 11 12 13 14 15 16123 1 7 VGS -- Qg V DS =10V ID =20A 0 5 10 15 20 25 30 Ciss, Coss, Crss -- VDS Ciss Coss Crss V GS =0 100 1.0 0.1 0.01 0.001 IF -- VSD --25 Tc=75 100 1.0 0.1 0.1 10 1.02 35 7 2 35 7 ‰yfs‰ -- ID V DS =10V 75°CTc= --25 IT01826 IT01828 IT01827 IT01829 25°C f=1MHz Forward Transfer Admittance, |yf s|–S Drain Current, ID –A Forward Current, IF –A Diode Forward Voltage, VSD –V Ciss, Coss, Crss – pF Gate-to-Source Voltage, VGS – V Drain-to-Source Voltage, VDS –V Total Gate Charge, Qg – nC
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2000. Specifications and information herein are subject to change without notice. 2SK3280 PS No.6436–4/4 0.01 23 5 7 2 2 2 3335557770.1 1.0 10 100 A S O DC operation <10ms 100ms1ms 10ms IDP =45A ID =20A 71.0 710 7100 0.1 0.01 IT01831 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 PD -- Ta IT01832 0.1 23 5 7 2 2 33 571.0 10 1.0 100 0.5 1.0 1.5 1000 SW Time -- ID V DD =15V V GS =10V td(on) td(off) tr tf IT01830 PD -- Tc IT01833 Operation in this area is limited by RDS (on). Switching Time, SW Time – ns Drain Current, ID –A Drain Current,ID –A Drain-to-Source Voltage, VDS –V Allowable Power Dissipation, PD –W Ambient Temperature, Ta – ˚C Tc=25°C Single pulse Allowable Power Dissipation, PD –W Case Temperature, Tc – ˚C