2SK3278 SANYO

Document overview

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  • PDF pages: 4

Technical content

Features

  • Low ON-resistance.
  • 4V drive.
  • Ultrahigh-speed switching. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SK3278 Package Dimensions unit : mm 2083B [2SK3278] N3000 TS IM TA-2613 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. N-Channel Silicon MOSFET DC/DC Converter Applications 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 5.0 6.5 0.85 0.7 0.6 1.55.5 7.0 0.8 1.6 7.5 0.5 1.2 2.3 0.5 1 23 2.3 2.3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 30 V Gate-to-Source Voltage V GSS ±20 V Continued on next page. 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 6.5 2.3 0.5 1.55.5 0.8 7.0 1.2 2.5 5.0 0.85 0.5 1.2 0 to 0.2 2.3 2.3 0.6 [2SK3278] unit : mm 2092B

No.6680-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Drain Current (DC) I D 15 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 45 A Allowable Power Dissipation P D Tc=25°C1 5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RathingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0 30 V Zero-Gate Voltage Drain Current I DSS VDS =30V, VGS =0 1 µA Gate-to-Source Leakage Current I GSS VGS =±16V, VDS =0 ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 1.0 2.4 V Forward Transfer Admittance |yfs| V DS =10V, ID =7A 7 10 S Static Drain-to-Source On-State Resistance R DS (on)1 I D =7A, VGS =10V 27 36 m Ω R DS (on)2 I D =4A, VGS =4.5V 40 56 m Ω Input Capacitance Ciss V DS =10V, f=1MHz 530 pF Output Capacitance Coss V DS =10V, f=1MHz 170 pF Reverse Transfer Capacitance Crss V DS =10V, f=1MHz 90 pF Turn-ON Delay Time t d(on) See specified Test Circuit 9 ns Rise Time t r See specified Test Circuit 130 ns Turn-OFF Delay Time t d(off) See specified Test Circuit 40 ns Fall Time t f See specified Test Circuit 60 ns Total Gate Charge Qg V DS =10V, VGS =10V, ID =15A 10 nC Gate-to-Source Charge Qgs V DS =10V, VGS =10V, ID =15A 1.5 nC Gate-to-Drain “Miller” Charge Qgd V DS =10V, VGS =10V, ID =15A 1.0 nC Diode Forward Voltage V SD IS=15A, VGS =0 1.0 1.2 V Marking : K3278 Switching Time Test Circuit PW=10 µs D.C.≤1% 10V VIN P. G 50Ω G S 2SK3278 ID =7A R L=2.1Ω VDD =15V VOUTVIN D Tc=75 --25 V DS =10V 10.0V 3.5V 3.0V 4.5V 6.0V V GS =2.5V IT02555 IT02556 8.0V ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A

No.6680-3/4 0.01 23 5 7 2 2 2 3335557770.1 1.0 10 100 1000 100 4567892311 1 10 V DS =10V ID =7A 0 5 10 15 20 25 30 Ciss Coss Crss V GS =0 0.01 0.1 1.0 0.001 --25 Tc=75 100 1.0 0.1 0.1 1.0 102 57 2 335 7 V DS =10V 75°C Tc= --25 IT02559 IT02561 IT02560 IT02562 25°C f=1MHz 1.0 100 0.1 IT02564 0.1 23 5 7 1.0 23 5 7 10 1.0 100 1000 V DD =15V V GS =10V td(on) td(off) tf tr IT02563 --60 80 6020 40 160 120 140100--40 --20 0048 1 2 1 6 2 02 6 10 14 18 V GS=4.5V , I D=4A V GS =10V , ID =7A IT02557 IT02558 Tc=25°C ID =4A DC operation 100µs1ms 10msID =15A IDP =45A Operation in this area is limited by RDS (on). R DS (on) -- VGS R DS (on) -- Tc Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Ciss, Coss, Crss -- VDS Drain-to-Source-V oltage, VDS -- V Ciss, Coss, Crss -- pF |yfs| -- ID Drain Current, ID -- A Forward Transfer Admittance, |yfs| -- S IF -- VSD Diode Forward V oltage, VSD -- V A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Forward Drain Current, IF -- A <10µs Tc=25°C Single pulse

No.6680-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2000. Specifications and information herein are subject to change without notice. PS 20 40 60 80 100 120 140 160 IT02565 0.4 0.6 0.2 0.8 1.0 1.2 20 40 60 80 100 120 140 160 IT02566 Amibient Tamperature, Ta -- °C Allowable Power Dissipation, PD -- W PD -- Ta Case Tamperature, Tc -- °C Allowable Power Dissipation, PD -- W PD -- Tc