2SK3270-01 FUJI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
2SK3270-01 N-channel MOS-FET Trench Gate MOSFET 60V 6,5m Ω ±80A 135W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (T C =25°C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V DS 60 V Continous Drain Current I D ±80 A Pulsed Drain Current I D(puls) ±320 A Gate-Source-Voltage V GS +30 / -20 V Maximum Avalanche Energy E AV 613 mJ* Max. Power Dissipation P D 135 W Operating and Storage Temperature Range T ch 150 °C T stg -55 ~ +150 °C * L=0,13mH, V CC =24V - Electrical Characteristics (T C =25°C), unless otherwise specified Item Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown-Voltage BV DSS ID =1mA V GS =0V 60 V Gate Threshhold Voltage V GS(th) ID =10mA V DS= V GS 2,5 3,0 3,5 V Zero Gate Voltage Drain Current I DSS V DS =60V T ch =25°C 1,0 100,0 µA V GS =0V T ch =125°C 10,0 500,0 µA Gate Source Leakage Current I GSS V GS =±30V V DS =0V 10 100 nA Drain Source On-State Resistance R DS(on) ID =40A V GS =10V 5,0 6,5 m Ω Forward Transconductance g fs ID =40A V DS =10V 25 50 S Input Capacitance C iss V DS =25V 9000 pF Output Capacitance C oss V GS =0V 1250 pF Reverse Transfer Capacitance C rss f=1MHz 700 pF Turn-On-Time t on ( ton =t d(on) +t r ) t d(on) V CC =30V 50 ns t r VGS=10V 200 ns Turn-Off-Time t off (t on =t d(off) +t f) t d(off) ID=80A 150 ns t f R GS =10 Ω 135 ns Avalanche Capability I AV L = 100µH T ch =25°C 80 A Diode Forward On-Voltage V SD IF =80A V GS =0V T ch =25°C 1,0 1,5 V Reverse Recovery Time t rr IF =50A V GS =0V 85 ns Reverse Recovery Charge Q rr -dI F /d t=100A/µs T ch =25°C 0,25 µC - Thermal Characteristics Item Symbol Test conditions Min. Typ. Max. Unit Thermal Resistance R th(ch-a) channel to ambient 75,0 °C/ W R th(ch-c) channel to case 0,926 °C/ W
N-channel MOS-FET 2SK3270-01 60V 6,5m Ω ±80A 135W Trench Gate MOSFET > Characteristics Typical Output Characteristics Drain-Source On-State Resistance vs. T ch Typical Transfer Characteristics ID =f(V DS ); 80µs pulse test; T C =25°C R DS(on) = f(T ch ); I D =25A; V GS =10V ID =f(V GS ); 80µs pulse test; V DS =25V; T ch =25°C ID [A] 1 R DS(ON) [m Ω ] ID [A] 3 V DS [V] → T ch [°C] → V GS [V] → Typical Drain-Source On-State-Resistance vs. I D Typical Forward Transconductance vs. I D Gate Threshold Voltage vs. T ch R DS(on) =f(I D ); 80µs pulse test; T C =25°C g fs =f(I D ); 80µs pulse test; V DS =25V; T ch =25°C V GS(th) =f(T ch ); I D =1mA; V DS =V GS R DS(ON) [m Ω ] g fs [S] 5 V GS(th) [V] 6 ID [A] → ID [A] → T ch [°C] → Typical Capacitances vs. V DS Typical Gate Charge Characteristic Forward Characteristics of Reverse Diode C=f(V DS ); V GS =0V; f=1MHz V GS =f(Qg); I D =80A; Tch=25°C ↑ ↑ IF =f(V SD ); 80µs pulse test; T ch =25°C C [F] 7 V DS [V] 8 V GS [V] IF [A] 9 V DS [V] → Qg [nC] → V SD [V] → Maximum Avalanche Energy vs. starting T ch Safe Operation Area E AV =f(starting T ch ): V CC =24V; I AV ≤ 80A ID =f(V DS ): D=0,01, Tc=25°C ↑Z th(ch-c) [K/W] Transient Thermal impedance ↑ 10 ↑ 12 Z thch =f(t) parameter:D=t/T E AV [mJ] ID [A] starting T ch [°C] → V DS [V] → t [s] → This specification is subject to change without notice!