2SK3269-ZJ KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
www.kexin.com.cn 1 MOSF ET N-Channel MOSFET 2SK3269-ZJ ■ Features
- VDS (V) = 100V
- ID = 25 A (VGS = 10V)
- RDS(ON) ＜ 100mΩ (VGS = 10V)
- Low on-resistance, Low Qg
- High avalanche resistance ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 25 Pulsed Drain Current IDM 100 1.4 Single Avalanche Energy (Note.1) EAS 22.5 mJ Thermal Resistance.Junction- to-Ambient RthJA 89.3 Thermal Resistance.Junction- to-Case RthJC 3.125 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Power Dissipation ℃/W V A PD WTc = 25℃ Ta = 25℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=1mA, VGS=0V 100 V Zero Gate Voltage Drain Current IDSS VDS=80V, VGS=0V 10 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±1 uA Gate Threshold Voltage VGS(th) VDS=10V , ID=1mA 2 4 V Static Drain-Source On-Resistance RDS(On) VGS=10V, ID=12A 100 mΩ Forward Transconductance gFS VGS=10V, ID=12A 6 11 S Input Capacitance Ciss 960 Output Capacitance Coss 285 Reverse Transfer Capacitance Crss 85 Turn-On DelayTime td(on) 15 Turn-On Rise Time tr 10 Turn-Off DelayTime td(off) 65 Turn-Off Fall Time tf 35 Diode Forward Voltage VSD IS=15A,VGS=0V 1.4 V VGS=10V, VDS=30V, ID=12A,RG=2.5Ω VGS=0V, VDS=10V, f=1MHz pF ns G D S
www.kexin.com.cn2 MOSF ET ■ Typical Characterisitics Paera noitarepo efaS D Ta Drain current ID (A) Drain-source voltage VDS (V) 10−1 100 1 000 0.1 1 10 100 t = 100 ms IDP ID DC t = 100 µs t = 1 ms t = 10 ms Non repetitive pulse TC = 25°C RDS(on) / RDS(on) Limited 0 5025 10075 125 150 Ambient temperature Ta (°C) Power dissipation PD (W) (1) (2) (1) TC = Ta (2) Without heat sink: PD = 1.4 W N-Channel MOSFET 2SK3269-ZJ