2SK3269 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 1
Technical content
Features
4.5 V drive available
RDS(on)1 =1 2m MAX. (VGS =1 0V ,ID =1 8A ) Low gate charge Q G = 30 nC TYP. (ID =3 5A ,VDD =1 6V ,VGS =1 0V ) Built-in gate protection diode Surface mount device available Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain source surrender voltage V DSS ID=1mA,VGS=0 100 V Drain cut-off current I DSS VDS=20V,VGS=0 10 A Gate leakage current I GSS VGS= 20V,VDS=0 10 A Gat cutoff voltage V GS(off) VDS=10V,ID=1mA 1.0 2.5 V Forward transfer admittance Yfs VDS=10V,ID=12A 9.0 S VGS=10V,ID=18A 8.5 12 m VGS=4.5V,ID=18A 12 19 m Input capacitance C iss 1300 pF Output capacitance C oss 570 pF Reverse transfer capacitance C rss 300 pF Turn-on delay time t on 70 ns Rise time t r 1220 ns Turn-off delay time t off 100 ns Fall time tf 180 ns VDS=10V,VGS=0,f=1MHZ ID=18A,VGS(on)=10V,RG=10 ,VDD=10V Drain to source on-state resistance R DS(on) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage V DSS 100 V Gate to source voltage V GSS 20 V ID 35 A Idp * 140 A Power dissipation T a=25 1.5 Tc=25 40 Channel temperature T ch 150 Storage temperature T stg - 5 5t o+ 1 5 0 *P W 10 s,Duty Cycle 1% Drain current PD W