2SK3264-01MR FUJI
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Technical content
a Device Name : Power MOSFET sizi - - . wa Type Name: 2SK3264-01MR _ ates #2 ses Begs Eases Fuji Electric Co.,Ltd. Matsumoto Factory | —~|_ pate | name | areroven | Fuji Electric Co.,Ltd. a a = Pee EL MSSFA412 fe EE
- Scope This specifies Fuji power MOSFET 2SK3264-01MR 2. Construction N -channel enhancement mode power MOSFET 3. Application for switching 4, Outview TO-220F Outview Seeto 5 / |2 page 5. Absolute maximum ratings at Tc=25°C (unless otherwise specified) [cosinor onnerea | [= 7 [a> _| Repetitive or non-repetitive Toh S150C Avalanche energy 378.3 See page !2/)2 * 3.3 ay i Pe Operating and storage Teh 150 c gist Hs “Le 14.2mH, Vec= 80V sgase 3 5 g He 6. Electrical characteristics at Tc=25°C (unless otherwise specified) ERE2
53355 Static ratings -
i gist Description Symbol Conditions Unit ruil euage Drain-source Ip= 1mA Fasss breakdown voltage | BVpss Ves =0V 800 Vv Gate threshold Ip= 1mA voltage Ves(th) Vps =Ves 4 45] V voltage drain Gate-source Ves=+ 35V leakage current Vs =0V 10 nA Drain-source on- EE Fuji Electric Co.,Ltd A MS5F4412 a= H04-004-03
Description Symbol Conditions Unit [mio | typ. | ax | Forward fs ID= 3.5A s transconductance 9 Vo = 25V Reverse transfer _ [al @ Turn-on time Veo = 600V = ns we | | so] | s3 if 23 3 hy Reverse diode ag Hy is gig Characteristics aisee Description Symbol Conditions Pan. |p. | wax | Unit s55238 5 2222 Avalanche L= 14.2mH Tch= 25°C 25 a efpse capability lAV * See Figt and 2 7 A £3352 25 HA 8 Diode forward lr = 2XxID . 43 volt Ene 5 3 onvvonsage vso Ves=0V, Teh=25 °C 1) 45) Vv gage 22 5 a8 Reverse recovery ter IF=ID Fy 23552 time Vos=0V Reverse recovery -diF/dt= 100A/uS charge Qrr Tch=25°C 10 uc 7. Thermal resistance Description Symbol Conditions Unit [ min. | tye | max. | Thermal resistance Pemee | ees fe 3f Co Fuji Electric Co.,Ltd A MS5F4412 7% FR
Fig.1 Test circuit L D.UT 10V we Pon = = 14.2 m
502 Starting Tch=25°C Vec
sisi . seri a ge2is 2gsss . . 23s aé Fig.2 Operating waveforms 2e385 et faeii Ves S>358 7 rae eigid ° BEa> 28 : #8 —— BVpss gaees av ——s E2ss8 AV Vos 0 Ip EH Fuji Electric Co.,Ltd. A MS5F4412 4a Eo
TYPE : 2SK3264-01MR 1040.5. o> ; 5+0, oy 2.740.2 See Note:2 | wr ‘| Trade~ Zi ol 6 mark hs ® oO Type al @ seee TTT See Note:1 - . Bigs L_-—.-4 23935 Lot No. c3 uib 852 aé aaete i l eeeaa A 1.20.2 4 aa S 4 ft “ A ll 1.2+0.2 £ H fe552 . 3 e943 Aare g HH 4 Ms ne) i \\ | Pre-Solder Ee: ae H HH 4 20833 m Hw Z EGSES I 0.7+0.2 0.6 *8? OROMe) ob oo dn CONNECTION ee @ GATE Note: 1. Guaranteed mark of avaranche ruggedness. ‘ 2. Country of origin mark. (2) DRAIN No k is Made in JAPAN. Felis Made in PHILIPPINES. @ source DIMENSIONS ARE IN MILLIMETERS. _T— Fuji Electric Co.,Ltd. MS5F4472 0, FE 2 ET
Power Dissipation . PD=f (Tc) 70 rr) a OS OE GON GN ON S(O OS A PN SGN ON a POS OR NN SG Pee eee eee 60 a SN MO SAN SO A CO GON COU OU DO CN GS A ON SE [Ne eee) A A a SS MO SS 50 nee eee eee ee) PN eee) eae a a A SS GG ee ee a PON DS US CO NN SS GO 40 eee nee eee a SG NR ON = poy NR Te) Paarl a A A A RS KO SN a A RC 2 30 NO Ne DG NN SOG PO SO (Ree gf Prep peer eee a A CON SO ND SOO SS a ee ee | a Ge ee ee Ge ee eee NT) - 10 eS CS A a RS A SN COS SO CO Bg2y A SC GC SB Face a SC NN NG SG, SE gece [NS 23 $3 0 OA RN NHS SO NS NN NN 2328 0 50 100 150 “ese esEfh Te [°c] qi Safe operating area a 1D=# (VDS) :D=0. 01, To=25°C aey CSS aeiy — eee sss oe oe 3S Beg a A NO 8 OS 8 8 GO 5Se23 ea a A EGS 35 Rt fais oe EES Fee RS C| [NENT 10 we s aE Re SS 100 a = jg LU TN 2 == SS TTT TT SST a OR Pe |, {| | sit ot See weet Fp —— 7 ae =| == Feet 00me en | eal en or a T A 10? 10° 10! 10? 10 wos [Vv] a Fuji Electric Co.,Ltd 2 % EH ji Electric Co.,Ltd. 4 4 HO4-004-03
Typical output characteristics ; 1D=f (VDS) :80 4s pulse test, Tc=25°C [TTT TTT TTT TTT Tye et tt PET TTP Pry yey ey | | SRR | (ETT rrr yt yr yy eee
15 SO eS
LPT PTT er | PPP TTT eee rt | : [TTT TT err CEPT TPT TTT ger TTT 2p COO a = CETTE gr TT eS ETP Pr ra yy Saae0) 40SSSESESEe PTT ACR | sti AaArir rrr ryt tr gt 8) . LTIA
342 TTA rr fev |
ee (Ari Pi y TTT ty i te sy :igi » AEE er yy aoe = ee fy 0 10 20 30 40 52336 vs [VJ g322 i Typical transfer characteristic fbr? ID=f (VGS) :80 44s pulse test, VDS=25V, Tch=25°C 2553 i a 333 te A a A HO OD Peete [TTT rrr reer rt ses? Hui oe LE ‘ SSSSGS Saas s2-saaa= ee ee A | a A a 2 Oe Pry er rer ye 2 tl A Ml ===> Seaanar Seas === ee ee A A 7 GO PPT yee oe LU SSSSSSS55saa—--aaaa= re ee OO (rrr yrr rir yr yy ee ee JO ie) 1 2 3 4 5 6 7 8 9 10 ves [V] —-] Fuji Electric Co.,Ltd. A MS5SF441200 7, HO4-004-03
Typical forward transconductance gfs=f (ID) :804s pulse test, VDS=25V, Tch=25°C a . C—O . a a = a ee > a
2 Te PT
a
3487 PIP
if 7 10" 107 10° 10! ul Typical drain-source on-state resistance 2B] __,,RDS (on) =#.(1D) 80s pulse test, To=26°C 0 5 10 15 20 1D [A] ae Fuji Electric Co.,Ltd. A MSSF441200 FR
7 HO4~004-03
Drain-source on-state resistance 5 RDS (on) =f (Tch) : 1D=3. 5A, VGS=10V ETT TTT TTT TTT yyy iT ISSR RR RRR TTT TTT TTT Ter oP rt te o Dany,
2 Cece beech
Z pL bet | = UTE Pe rt tee fT TTT eee deer tT TTT TE TT ree ti HT up > LLP titi it te 325 -50 ) 50 100 150 wi , Gate threshold voltage nn VGS (th) =f (Toh) : ID=1mA, VDS=V@s 2053 6.0 ee aul FEE EERE EERE EE REEEE EH BS223 a ieeil so (SECC EE EEE eer ial PEER EEEE REECE EEE PS COPS imax. aos SSCP EEE eer OTT ee. PERE -_ a a <8 sa S a FEE tain SET ay s a a B a g a a a a PORE EEE EERE ERS a a a Lo Oe (te ee HEE EEE 9 (Heer " -50 0 50 100 150 Teh [°C] a Fuji Electric Co.,Ltd. A MS5F4412 % == HO4-004-03
Typical gate charge characteristic VGS=f (Qg) : ID=7A, Tc=25°C .
800 TTT nooo 4°
STOCOMNAAGUEAtOGEGTEACESEEUCECEEEELEUEUEUESUPECSEESUOEEEUCOUEGOUEUEEEEETEEACAS SOQ CEEEE ECS FE TT TT TTT TT TITTY aH COT NC 7 re eoo HATTIE AT 30 COO eA CO eee) /ANUAAVORELAOEUOSUEUENSUOUEUSAUSUGERUSERTUSUONEAOOSUOUNNROED? 457 <57¢RULENLSRELOER ECOOMm HECHT VOOQGOQHHsQQ/FCKCTLUTEGESGUGUOGQTIATECEUQOUGGKQD740¢<0°aiKUUELIHEGLGGHIII BS COA < > COCOA a a 400V: COTTA a” ER VERERGGOSEAGCUORGEORGGCTELRLOGERSUROGR) OF 40> 2GUINEERRORRAGORUOOSRSR0008 a g 400 COORCONT ae e 20 ‘=<
4 CONC eee =
300 PERERA 15
POTEES ETA OOOTOWaTOTAEGGETUOe¢OeapeaGQHTHSUEUECUCOTCQMANHIALEIUUIILUECEGUUIML OLONE\\ GHA AUNEQUUNAOUHEOD2 49240 AU0UULOANISUSSLSSCENSAUELEUNONTOREDERONUUEE COTA
200 CUA) 10
Arve AH tel pep teca cat eee a ta see ene ta eset es 100 TMNT 5 222% VCEUENCGRVEOUGOGATSTAGTAUETEERUOUOWOONEGTIGUCCECCUGUOGATAMIMTEATLUTHLTEEUSEGUGT Bese AMEE ALEEL MAGEE UREEUUAUEELGGOGE EC AEAAUEEELEEL EE EEEEEEELA fy $ 3 0 MUMERISCRUREttneecceccsecscovssecsscsecesccsnesseccsssssessusenecaeccenarseesss| 0 2325 0 20 40 60 80 100 120 140 160 gfegd Qg [nc]
32283 Typical capacitances
35 5 C=f (VDS) : VGS=OV, f=1MHz Eerie VOn Cees oe 228% EEE aL ee esti Baz ne C7 3838 : a a 8 ERs23 Te batie Eee SST TE EEz2 Nill
10 HEN sot
_ CE SNe Eo Ee I ISS Co ° I NT ull SY 100p TT CUI SS oe FER a ro 1H Ser sel a | | 1] . Cre woe LIU TTI LIT ET 107? 10" 10° 10! 10° vos [Vv] EH Fuji Electric Co.,Ltd. A MS5F4412 "HA Pt ‘ HO4-004-03
: Forward characteristic of reverse of diode IF=f (VSD) :802s pules test, VGS=0V A 0 PTT TT rrr rrr yy eee SERA RRRR REAR RRR RRR RE ESSERE oY er EEE EERE EEE EEE ttt reh=25°C typ. 7] eee ae LEP T TP A C) BH2 fe EERE Sper pp = FERRER EEE EERE EERE eee eee BERR RRSERS RES RRR RRR RRR EEE ro ET Ye LTPP rryrr rr yy rrr yer 332% SRR ee eee He oe LLL EE) 2a2i 00 02 O04 #06 O8 1.0 12 1.4 riled vsd {V] E3338 ” 5 2 ia? Transient Thermal Impedance aeeqt Zth(ch-c)=f(t):D=t/T : Bis 0 SS ae cauet a = Sati nee — Selle -afl om Sot ee a eT ° Sree ces sees = onal ees 8 Ni ceed nee Saas] meer asd SET Fe} Ea Cee TT) it TT wo: LETTE Tp tel | HRA , woe CLUE ETT CTT t [sec] I Fuji Electric Co.,Ltd. A MS5F 4412 " == H04-004-03
Eas=f (starting Tch) :Vco=80V, 1,=7A a SS EES SOS NN SS LS CO ES a a wo Lt TTP PP rr ee a a aD a go Lt IN TP rp PP tt a a a A ee 3 sD a a = ee ee » soll} tin Ty tT Prt a [fF AE es Itt A} 4 Kj} EAN A} + wo tT rrr Pr Arp tT tt sees sO a Os 2 3: i PN ga2: a Ne Zeek. oe ti rTritT tT tri tT tree | g : aT 0) 50 100 150 . 3433 522] Starting Tch [°C] Eszed eeed . aay iil 23522 Fuji Electric Co.,Ltd. A MS5F4412 9 ‘% == H04-004-03