2SK3262-01MR FUJI

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UPS (Uninterruptible Power Supply) DC-DC converters Equivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Gate(G) Source(S) Drain(D) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS =200V VGS =±20V ID =10A VGS =4V ID =10A VGS =10V ID =10A VDS =25V VCC =100V ID =20A VGS =10V R GS =10 W Min. Typ. Max. Units V V µA mA nA m W S pF A V ns µC ns Min. Typ. Max. Units Thermal resistance R th(ch-c) channel to case R th(ch-a) channel to ambient 2.78 62.5 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs C iss Coss C rss td(on) tr td(off) tf IAV V SD trr Q rr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D =1mA VGS =0V ID =1mA VDS =VGS Tch=25°C V GS =0V Tch=125°C VDS =0V VDS =25V VGS =0V f=1MHz L=100µH Tch=25°C IF=20A VGS =0V Tch=25°C IF=20A VGS =0V -di/dt=100A/µs Tch=25°C V A A V mJ W W *1 L=1.6mH, Vcc=24V 200 1.0 1.5 2.0 10 500 0.2 0.5 10 100 110 150 85 100 9.0 19.0 1700 2550 290 435 185 280 10 15 45 70 225 340 120 180 0.93 1.40 250 2.90 -55 to +150 TO-220F15 3. Source 2.54

0123450.1 100 Typical transfer characteristics ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C ID [A] VGS [V] Characteristics 2SK3262-01MR FUJI POWER MOSFET 0 50 100 150 Power Dissipation PD=f(Tc) PD [W] Tc [°C] ID [A] VDS [V] Safe operating area ID=f(VDS):D=0.01,Tc=25°C 1µs 10µs 1ms 10ms 100ms 100µs D.C. 0123456 15V 3.5V 3.0V 4.0V 4.5V 10V 5.0V VGS=20V Typical output characteristics ID=f(VDS):80µs pulse test,Tc=25°C ID [A] VDS [V] 210 Typical forward transconductance gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C gfs [s] ID [A] 0 1 02 03 04 05 06 0 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22 RDS(on) [W ] ID [A] Typical Drain-Source on-State Resistance RDS(on)=f(ID):80µs pulse test,Tch=25°C 10V 15V 20V 4.0V 4.5V 3.5V VGS= 3.0V 5.0V t T t T

2SK3262-01MR FUJI POWER MOSFET -50 -25 0 25 50 75 100 125 150 100 150 200 250 300 max. typ. Drain-source on-state resistance RDS(on)=f(Tch):ID=10A,VGS=10V RDS(on)[mW ] Tch [°C] -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0VGS(th) [V] Tch [°C] Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA min. typ. max. 100p 10n 100n Typical capacitances C=f(VDS):VGS=0V,f=1MHz C [F] VDS [V] Ciss Coss Crss 0 20 40 60 80 100 120 140 160 180 200 40V 100V Vcc=160V Typical Gate Charge Characteristics VGS=f(Qg):ID=20A,Tch=25°C 100 120 140 160 180 200 VDS [V] VGS [V] Q g [nC] VGSVDS Typical Forward Characteristics of Reverse Diode -ID=f(VSD):80µs pulse test,Tch=25°C 10V VGS=0V -ID [A] VSD [V] 0 25 50 75 100 125 150 Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch),Non Repetitive I(AV) [A] Starting Tch [°C]

2SK3262-01MR FUJI POWER MOSFET 0 25 50 75 100 125 150 100 200 300 400 500 Maximum Avalanche energy vs. starting Tch Eas=f(starting Tch):Vcc=24V,IAV <=20A,Non-Repetitive Eas [mJ] Starting Tch [°C] 010 Transient Thermal Impedance Zth(ch-c)=f(t):D=t/T 0.01 0.02 0.05 0.1 0.2 D=0.5 Zth(ch-c) [°C/W] t [sec] t TD= t T