2SK321 PANASONIC

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PANASONIC INDL/ELEK{SEMI} vec DE 6932854 DO0%ba2 7 ii BRMRKIVIAI 28K321 vi ay NF ev RIE /Si N-Channel Junction [ERs HE RS 1 ORB / Wide-Band, Low-Noise Amplifier Tait Dae EFA Xx FR/Video Camera 2.8933 0.65 + 0.15] 1 lb65+0.15 BS Features Hr cy © AINE Cin O78 19, / LOW Cnn ada Zz] j 3 © MHI TIF A oa DKS 9 /High om cr i Ae 43 a rr HBX / Absolute Maximum Ratings (Ta=25 °C) “Hj = ooh 4 WE v yo vane | Veo [BT a Ryd 2 it ee 3\\g 3 Ft mA Lek ale Gnu ee Gabe Oot s Fevaniae | Te | 10 |e 1: Drain oe yrin =S-4ws] 3: Gate @ BRK Electrical Characteristics (Ta=25 *C) Tem [Symbol [Condition min. [ typ. | max. [ Unit FoR Re4S RE | Vow [aWeA | TTT ob RIE [Veo [hae | TTT FHL mie [His | =Vaa7Vs Va=o Ta nk Fed 3 [tos | Ves=sV Ve=0 |S | | mA Fob V-AL SME | Veo | Vor=SV, bates TTT 8 | Ray 777% [am | Vor=5V, Vesn0, f1kHe [5 | a0 | | ms ADEA [Gm | Va=SV, Veo, ferme [|e | | * Toss FY 7TH loss Classifications . - Class [Pp | @ [Tr T[ ss Tos (mA) S=16 [=e | a0~a2_ | 802 Marking Symbol IFS a — 1049 —

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PANASONIC INDL/ELEK{SEMI} 72C D Bp es32854 ooomay o i BRMRKIVIZI 2SK374 VU ay N Fy vAUVES HSI N-Channel Junction (‘SARUM /AF Amplifier Unit mm 24 9F 77 /Switching 2.8283 0.65 015, 1 065.4015 a /Features rH ct © Merit NF activ, /Low NF wl et 7] | Fs © Hb FL 4 2 TEE Veo o°Fi¥. /High Vovo aac Poh al q_| v4 Wl @NBATM / Absolute Maximum Ratings (Ta=25 °C) “rH = Fah eA BE v , ah yan v sty Fede 7am | Vox [8 a3 3 Fed Wei [to [0m 2 or + Tih ce eC Gade OOS Gees ee 1: Drain see re 3: Gate seein c HIN) MOLD Pastoge @ BAHstt Electrical Characteristics (Ta=25 ‘C) Item [Symbol [Condition min. | typ. | max. | Unit yok Rear @e | Veo [c= 100KA, Vos | Two | 7 * Lehi [ess | =Wes=30V, Vos=o | to na Bud > Ri [Toss | Vos=10V, Ves=0 | a | 20 | ma vob Yat oR | Vee | Ve=t0V, =twA TT WR ay 779% [te | Vos=10V, T=5mA, f=ikHz | 2s | 7.5 [| ms ANB [Cus | Vos=10V, Ves=0, f=1MHe || 6.5 || pF REE [Cas | Vos=10V, Vos=0, f=1MHz || 9 | | opr ave i "Toss 7» 7PB/loss Classifications Gas TP [ @ J RT Ss Marking Symbol | 2BP_ [| 2BQ” | 2BR_ | 28S — 1051 —

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PANASONIC INDL/ELEK{SEMI} 72c D ff L932as4 OooI72a sf p07 PUIVITA-K MAS6 DAA IITATR VY Ay LER ey pWIFE—-FH/Si Epitaxial Planar KY EAL y FY IHX44A—F /Band Switching Diode Unit ? mm Ss WS Features & do 968 25:02 © Mister AH, /Low rr ‘axe ae © 74+ FEM Co OMIM HHEACNS Vs, /Small reverse capacitance Scie re shift-to-vol tage ratio Pee | © sieitt/High reliability 12.4 Mi25}RKEA/ Absolute Maximum Ratings (Ta=25°C) Item Unit ois 3 ETE (HCA) [Vv | [V . sted 3 wei) [em a ee Sofia aia c ads RF c 10" 1: Cathode 2: Anode Tem | Symbor[—____Gonition [win [om] ma [ Unt ia [oe Westsv 06 J 00 nk ETE (HLA) [Vr [i=t00mA oe PO 74a FE [Go | Wesisv, feiMH, | 3 2 | oF inane [re [r=3ma, frome, Tf 0.85 [os [0 * T, BEB / 1, Test Circuit ° § (A) CROKE? » a Fy + 1000pF x5 (iseF)/Ground type capacitor 1000pF x 5pcs._ Boonton Type | a parallel 250A 3. 5600, R-X 4-7 L: 2mmg M4 7 ¥&/2mm¢ silver plate 6 © Ve a | — 1096 —

: PANASONIC INDL/ELEK{SEMI} 72ec D Bp essessu 0009729 ? ia PVUIIYITA—-K MAS6 BYQYITATR ASS T. 07-15 Ip—Vr In-Ta a: Cy-—Vr ve, == ee === [ty ee | EERE = Eg HE > EEE = EEC SS , PSS py bees Ft TTT & Eeeerr ree & nn CLE EES" Cee ta wEEEEFFFE WEEE LET TT MURIE Ve (V) Mm@lige& Ta (°C) WORE Va (V) ref ry —Ip FTL CU | CELA) CTI eT 8 a 0 ca CMR TM = “COSINE CTT OSHC & USE TTT a COMMON “CMS SCEPC CC) CCI cin Cnn eal CCLRC A | 10 20 39 50 100 200300 500 1000 T 23 5 10 20 30 SO 100 ‘Wie £ (MHz) MM Ie (mA) a —1097 —