2SK315 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 5
Technical content
Features
« Ideal for FM tuners in radios, stereos, etc. « Because it is compactly packaged, sets can be made compact, « Small orap (Cpag=0-O8PF typ). « High yeg Cypg =12.0ms typ). Absolute Maximum Ratings at Ta=25°C unit Gate to drain voltage Vepo -20 Vv Gate current Ig 10 mA Drain current Ip 20 mA Allowable power dissipation Pp 200 mW Junction temperature Tj 125 % Storage temperature Tstg -55 to +125 °c Electrical Characteristics at Ta=25°C min typ max unit Gate to drain breakdown voltage V¢pr)Gpo0 Igz-10pa -20 Vv Gate cutoff current Igsg Vgg=-0-5V, Vp g=0V ~10 nA Drain current Ibss Vps=5Vs Vggz0V 2.5% 24.0% mA Cutoff voltage Ves(or. ) Vpg25V,Ip=10pA 3.5 v Forward transfer admittance Veg! eis Vpg=5V, Vgg=0V, f=1kHz 6.0 12.0 ms Forward transfer admittance \\Yesl (2) Vpg=5V,Vggr0V, 6.0 12.0 ms
2 Foomie
Input capacitance Cass Vpg?5V, Vgg=0V, f= 1MHz 8.0 pF Reverse transfer capacitance Ons Vpg=5V, Vgg=0V, f= 1MHz 0.08 0.3 pF Output capacitance Coss Vpg=5V, Vgg= OV, f= 1MHz 6.5 pF Power gain PG Vpg=5V, Vgg=0V, f= 1 00MHz 23 4B Refer to specified test circuit. Noise figure NF Vpg=5V, Vgg0V, f=100MHz 2.2 4.0 dB See specified Test Circuit. # The 2SK315 is graded as follows by Insg (unit:mA): B uo Po = Ta sat | tT TT TT o” XN Package Dimensions 2040 z \\ (unit: mm ) REL IN TET) 0 pte, a 3 15.0 TONE === 6 : © N jokes 2 co tT ING TO : a
2 N G: Gate
3 “ NX S$: Source
3 N D: Drain
yo mM 40 &© © 10 120 MO 0 .
2 Awbient Temperature,Ta - °C SANYO: SPA
SANYO Electric Co.,Ltd. Semiconductor Business Headquarters . TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 6017KI /3145KI Ne1005-1/5
Ip = Ves Ip - Yps AS OO HH ee PPP | PA aT Pi] tT ty PP ea yo PEPE EE AO eee EEE ee ee ee a ae ee ee “10 <= = | a [I Pott Gate to source voltage, Vg — V “Drain to source vattage, Vps — V Ip = Ves Ip = Vos, } | tt tt | el PTO Tot TTT | | tT | PP A ferro yee 7 Poe eo “20 1.6 tit a Gate to source voltage, VGs — V Drain to source voltage, Vos — V Ip - Ves Ig - Vos fosreT T TT TT TTT TPT TTT Ty pt a os=oe Popp TT ated 7 Pt Te ere ed TT Pt} i [oe eye ee) ee eee "— “Gate-source voltage, Vos — VV , Drain to source voltage, Vpg — V »—— Tpss - Ves(off — lyfs| - ID foul | TT tT | # Pel TT < rnd > Prroorerl af Tet PCCUCDZLE] i Ae Bi 2 {Tt ao | g § Coo Ser gt | | UA )oe Soe er re es Doe Tr) PL] 7 Poco 2 a A ee ee Gata to source cutoff voltage, Vstofty ev re Brain current, ip — mA : eee N01005-2/5
a Crss - Vos x0 Input admittance,yis - f —ee — . HESS yt ft TT ses a — TT 3 _—— ee Fa Se a re ee NN pS a Ber eto) ® eee
2 SS ee ae
8 Coo a eye
8 Po RSH a Ss >
a LITT WNT] es A ¥ os NM! a i oe OS 7 — = ee —. — . x 10 2 100 1000 o Drain to source Voltage, Vps-V ° Frequency, f — MHz
5 Reverse transfer admittance yrs - f co forward transfer admittance ,yfs - f
“ 5 ; S50 eer op ft tt / a Oe [a ere @ 4 , Qt ee | 6 fen) eee F) 4 cI o pf tt Rant ol ot - ce ba col —_ \\A tT Tt est Tee ++ +] SH ee ee 7 | ee a “Frequency, f —MHz ™ ° Frequency, f — MHz “0 Output admittance,yos - f 0 Input admittance,yis - VOS ae. | Se ss Se *] TUT] Tl 2 + ea a a a eer 7 Ma Te er) ee > 5 a 4 4a ee Ss a a {| Py EP | oe Ht tH (iit yt yy oe ” | t Frequency, f - MHz Drain-source voltage, Vos — V on Output admittance,yos - VDS 0 ” Input en a te f=10MHz ne TH tot | eee pe Ne | a a ce Cee eee reo ttt ET Ly eee ee goon N os 2 Ph. | A Tt Lo a ' ; mee: POET NE YS aL Tf is 27 40 2? 387 9 1.0, - t Drsin,to souree voltage, Vps -V Drain current, Ip — mA ee No1005-3/5
Py Input: admittance, yis - VOS 0 sl de MS jaws, SEPT EP er er a ae ee ee ho ttt Tt ty Pte ET I Se Pi Pe Pes PT 3 3 ——— i | [PP 7 17ft Ti Ty [4 ; o +E TT TTT | ott yt yy Drain to source voltage, Vg — V Drain current, Ip — mA Reverse transfer admittance ,yrs - VDS 2forward transfer admittance,yfs - Ip eh pf Sa fisete| | L| “ENT oss tone of es, ehh] a POA Cer £ ptt E ae ae [| oe on Anne 0.01 1.0 {—} Kee Lf r+ ip Sf A a i Poe yt “ Drain to source voltage, Vos -v Brain current, Ip — mA Forward transfer admittance ,yfs ~Vps 0 Output admittance, yos - Ip 100 = a Roe Pt | J ae a A poy 2 — @ tq) Pt eal no Li, | TT | ee g SS E oe ee Coote Drain to source voltage, Vg — V Drain current, ID — mA Output admittance,yos - VDS 2 PG,NF - Ip A) ea — Ipgg= 100A =5.0¥ FESS est tet eS ee ae ig g oO g Sot 2e°C 7 al 52 e oe a BV pf 8a OY TP aa: img pratea wire, 10g 47, | [oT RTT) eg rf tapped at 27 from V, 3 x 4 LN L2: immg plated wire, 18% 6T Se AL ene ee ee ofl | | PF | Ghee ro 2 FT ° 2 4 6 8 10 12 Drain to source voitags; Vp§ — V_. Drain current, Ip — mA a Ne1005-4/5
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Ml Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Ml Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Ne1005-5/5