2SK3112-S

2SK3112 RENESAS

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry.

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© 1998,2001 MOS FIELD EFFECT TRANSISTOR 2SK3112 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Document No. D13335EJ1V0DS00 (1st edition) Date Published May 2001 NS CP (K) Printed in Japan DATA SHEET

DESCRIPTION

The 2SK3112 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver.

FEATURES

• Gate voltage rating ±30 V
• Low on-state resistance RDS(on) = 110 mΩ MAX. (VGS = 10 V, ID = 13 A)
• Low input capacitance Ciss = 1600 pF TYP. (VDS = 10 V, VGS = 0 V)
• Avalanche capability rated
• Built-in gate protection diode
• Surface mount device available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) V DSS 200 V Gate to Source Voltage (VDS = 0 V) V GSS ±30 V Drain Current (DC) (TC = 25°C) I D(DC) ±25 A Drain Current (pulse) Note1 ID(pulse) ±75 A Total Power Dissipation (TC = 25°C) P T1 100 W Total Power Dissipation (TA = 25°C) P T2 1.5 W Channel Temperature T ch 150 °C Storage Temperature T stg −55 to +150 °C Single Avalanche Current Note2 IAS 25 A Single Avalanche Energy Note2 EAS 250 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω , VGS = 20 V→ 0 V

ORDERING INFORMATION

2SK3112-ZJ TO-263(MP-25ZJ) (TO-220AB) (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit Zero Gate Voltage Drain Current I DSS VDS = 200 V, VGS = 0 V 100 µA Gate Leakage Current I GSS VGS = ±30 V, VDS = 0 V ±10 µA Gate Cut-off Voltage V GS(off) VDS = 10 V, ID = 1 mA 2.5 4.5 V Forward Transfer Admittance | y fs |V DS = 10 V, ID = 13 A 6.0 S Drain to Source On-state Resistance R DS(on) VGS = 10 V, ID = 13 A 76 110 m Ω Input Capacitance C iss VDS = 10 V 1600 pF Output Capacitance C oss VGS = 0 V 430 pF Reverse Transfer Capacitance C rss f = 1 MHz 280 pF Turn-on Delay Time t d(on) VDD = 100 V , ID = 13 A 35 ns Rise Time t r VGS = 10 V 140 ns Turn-off Delay Time t d(off) RG = 10 Ω 110 ns Fall Time t f 70 ns Total Gate Charge Q G VDD = 160 V 60 nC Gate to Source Charge Q GS VGS = 10 V 11 nC Gate to Drain Charge Q GD ID = 25 A 40 nC Body Diode Forward Voltage V F(S-D) IF = 25 A, VGS = 0 V 1.0 V Reverse Recovery Time t rr IF = 25 A, VGS = 0 V 300 ns Reverse Recovery Charge Q rr di/dt = 50 A/µs1 . 8 µC TEST CIRCUIT 1 AVALANCHE CAPABILITY R G = 25 Ω 50 Ω PG. L VDD VGS = 20 V → 0 V BV DSSIAS ID VDS Starting Tch VDD D.U.T. TEST CIRCUIT 3 GATE CHARGE TEST CIRCUIT 2 SWITCHING TIME PG. R G VGS D.U.T. R L VDD τ = 1 sµ Duty Cycle ≤ 1% VGS Wave Form ID Wave Form VGS 10% 90%VGS 10%0 ID 90% 90% td(on) tr td(off) t f 10% τ ID ton toff PG. 50 Ω D.U.T. R L VDD IG = 2 mA

Data Sheet D13335EJ1V0DS 3 2SK3112 TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A 20 25 30 01 5 51 0 VGS = 10 V Pulsed GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C VGS(off) - Gate Cut-off Voltage - V VDS = 10 V ID = 1 mA −50 0 150 50 100 5.0 4.0 3.0 2.0 1.0 −25 25 75 125 Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE V GS - Gate to Source Voltage - V R DS(on) - Drain to Source On-state Resistance - Ω 08 1 6 2041 2 ID = 25 A 13 A 5 A 0.5 0.4 0.3 0.2 0.1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A R DS(on) - Drain to Source On-state Resistance - Ω 0.6 0.4 0.3 0.1 10 1000.1 0.2 0.5 VGS = 10 V Pulsed FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT |yfs| - Forward Transfer Admittance - S ID - Drain Current - A 10 100 VDS = 10 V Pulsed Tch = −25˚C 25˚C 75˚C 125˚C 0.01 0.1 100 0.01 0.1 1000 100 0.1 0.01 0.001 0.0001 02468 1 0 1 2 FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A VGS - Gate to Source Voltage - V Tch = 125˚C 75˚C 25˚C -25˚C VDS = 10 V Pulsed

VSD - Source to Drain Voltage - V ISD - Diode Forward Current - A 0 0.5 1.0 1.5 VGS = 10 V 0 V Pulsed 100 0.1 0.01 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE V DS - Drain to Source Voltage - V C iss, Coss, Crss - Capacitance - pF 0.1 100 1000 1 10 100 VGS = 0 V f = 1 MHz C iss C oss C rss 10000 1000 REVERSE RECOVERY TIME vs. DIODE CURRENT I F - Diode Current - A trr - Reverse Recovery Time - ns 0.1 1 10 100 100 1000 di/dt = 50 A/ µs VGS = 0 V SWITCHING CHARACTERISTICS ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 100 1000 0.1 1 10 100 VDD = 100 V VGS = 10 V R G = 10 Ω td(off) td(on) tf tr VGS - Gate to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS Q G - Gate Charge - nC VDS - Drain to Source Voltage - V 0 1 02 03 04 05 06 07 0 VGS VDS 240 200 160 120 ID = 25 A VDD = 160 V 100 V 40 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50 150 R DS (on) - Drain to Source On-state Resistance - mΩ 0 100−50 Tch - Channel Temperature - ˚C 200 150 100 VGS = 10 V Pulsed 13 A ID = 25 A

Data Sheet D13335EJ1V0DS 5 2SK3112 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA Tch - Channel Temperature - ˚C dT - Percentage of Rated Power - % 0 20 40 60 80 100 120 140 160 100 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE TC - Case Temperature - ˚C PT - Total Power Dissipation - W 20 40 60 80 100 120 140 160 140 120 100 FORWARD BIAS SAFE OPERATING AREA 10 100 1000 ID - Drain Current - A VDS - Drain to Source Voltage - V 100 0.1 100 µs 10 ms 1 ms PW = 10 µs RDS(on) Limited ID(pulse) ID(DC) 3 msPower Dissipation Limited TC = 25˚C Single Pulse DC TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - sec rth(t) - Transient Thermal Resistance - ˚C/W 0.01 0.1 100 1 m 10 m 100 m 1 10 1000 100100 µ Single Pulse 10 µ R th(ch-A) = 83.3˚C/W R th(ch-C) = 1.25˚C/W

0.01 0.1 1 10 100 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD L - Inductive Load - mH IAS - Single Avalanche Current - A IAS = 25 A EAS = 250mJ SINGLE AVALANCHE ENERGY DERATING FACTOR 75 150 125 Starting Tch - Starting Channel Temperature - ˚C Energy Derating Factor - % 50 10025 100 VDD = 100 V R G = 25 Ω VGS = 20 V → 0 V IAS ≤ 25 A

Data Sheet D13335EJ1V0DS 7 2SK3112 PACKAGE DRAWINGS (Unit : mm) 1)TO-220AB (MP-25) 2)TO-262 3)TO-263 (MP-25ZJ) Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 3 10.6 MAX. 10.0 TYP. 3.6±0.2 4 3.0±0.3 1.3±0.2 0.75±0.1 2.54 TYP. 2.54 TYP. 5.9 MIN.6.0 MAX. 15.5 MAX.12.7 MIN. 1.3±0.2 0.5±0.2 2.8±0.2 φ 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 3 10 TYP. 1.3±0.2 0.75±0.3 2.54 TYP. 2.54 TYP. 8.5±0.212.7 MIN. 1.3±0.2 0.5±0.2 2.8±0.2 1.0±0.5 1.4±0.2 1.0±0.5 2.54 TYP. 2.54 TYP. 8.5±0.2123 5.7±0.4 4.8 MAX. 1.3±0.2 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 0.7±0.2 10 TYP. 0.5R TYP. 0.8R TYP. 2.8±0.2

M8E 00. 4 The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).