2SK3109 NEC

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Technical content

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 1998, 2000 MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Document No. D13332EJ1V0DS00 (1st edition) Date Published January 2000 NS CP (K) Printed in Japan DATA SHEET The mark ★ shows major revised points.

DESCRIPTION

The 2SK3109 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.

FEATURES

  • Gate voltage rating ±30 V
  • Low on-state resistance R DS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 5.0 A)
  • Low input capacitance C iss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)
  • Avalanche capability rated
  • Built-in gate protection diode
  • Surface mount device available ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Drain to source voltage (VGS = 0 V) V DSS 200 V Gate to source voltage (VDS = 0 V) V GSS ±30 V Drain current (DC) (TC = 25 °C) I D(DC) ±10 A Drain current (pulse) Note1 ID(pulse) ±30 A Total power dissipation (TA = 25 °C) P T1 1.5 W Total power dissipation (TC = 25 °C) P T2 50 W Channel temperature T ch 150 °C Storage temperature T stg −55 to +150 °C Single avalanche current Note2 IAS 10 A Single avalanche energy Note2 EAS 35 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Starting Tch = 25 °C, VDD = 100 V, RG = 25 Ω , VGS = 20 V→ 0 V

ORDERING INFORMATION

Data Sheet D13332EJ1V0DS002 2SK3109 ELECTRICAL CHARACTERISTICS (T A = 25 °C) Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit Drain Leakage Current I DSS VDS = 200 V, VGS = 0 V 100 µA Gate Leakage Current I GSS VGS = ±30 V, VDS = 0 V ±10 µA Gate to Source Cut-off Voltage V GS(off) VDS = 10 V, ID = 1 mA 2.5 4.5 V Forward Transfer Admittance | y fs |V DS = 10 V, ID = 5.0 A 1.5 S Drain to Source On-state Resistance R DS(on) VGS = 10 V, ID = 5.0 A 0.32 0.4 Ω Input Capacitance C iss VDS = 10 V 400 pF Output Capacitance C oss VGS = 0 V 110 pF Reverse Transfer Capacitance C rss f = 1 MHz 55 pF Turn-on Delay Time t d(on) VDD = 100 V 12 ns Rise Time t r ID = 5.0 A 34 ns Turn-off Delay Time t d(off) VGS(on) = 10 V 40 ns Fall Time t f R G = 10 Ω 20 ns Total Gate Charge Q G VDD = 160 V 18 nC Gate to Source Charge Q GS VGS = 10 V 3.5 nC Gate to Drain Charge Q GD ID = 10 A 10 nC Diode Forward Voltage V F(S-D) IF = 10 A, VGS = 0 V 1.0 V Reverse Recovery Time t rr IF = 10 A, VGS = 0 V 250 ns Reverse Recovery Charge Q rr di/dt = 50 A/µs1 . 0 µC TEST CIRCUIT 1 AVALANCHE CAPABILITY R G = 25 Ω 50 Ω PG L VDD VGS = 20 → 0 V BV DSSIAS ID VDS Starting Tch VDD D.U.T. TEST CIRCUIT 3 GATE CHARGE TEST CIRCUIT 2 SWITCHING TIME PG. R G VGS D.U.T. R L VDD τ = 1 sµ Duty Cycle ≤ 1 % VGS Wave Form ID Wave Form VGS 10 % 90 %VGS (on) 10 %0 ID 90 % 90 % td(on) tr td(off) t f 10 % τ ID ton toff PG. 50 Ω D.U.T. R L VDD IG = 2 mA

Data Sheet D13332EJ1V0DS00 3 2SK3109 TYPICAL CHARACTERISTICS (T A = 25 °C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A 10 20 30 Pulsed VGS = 10 V VGS = 30 V 40 50 0.01 0.1 41 2 0.001

100 VDS = 10 V

FORWARD TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - A 81 6 Tch = 125 ˚C 75 ˚C 25 ˚C -25 ˚C GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C VGS(off) - Gate to Source Cut-off Voltage - V VDS = 10 V ID = 1 mA −50 0 150 50 2.0 2.5 100 3.0 3.5 4.0 4.5 5.0 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT |yfs| - Forward Transfer Admittance - S ID - Drain Current - A 10 100 VDS = 10 V PulsedTch = −25 ˚C 25 ˚C 75 ˚C 125 ˚C 0.01 0.1 0.01 0.1 Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V R DS(on) - Drain to Source On-state Resistance - Ω 0.1 10 16 0.3 0.2 0.4 0.5 20246 1 2 1 4 1 8 0.6 0.7 0.8 0.9 1.0 ID = 10 A 5 A 2 A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A R DS(on) - Drain to Source On-state Resistance - Ω 1.2 0.8 0.6 0.2 10 1000.1 Pulsed VGS = 10 V0.4 1.0 1.4 VGS = 30 V

Data Sheet D13332EJ1V0DS004 2SK3109 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50 150 R DS (on) - Drain to Source On-state Resistance - Ω 0.4 0 100−50 Tch - Channel Temperature - ˚C 0.6 0.2 VGS = 10 V Pulsed ID = 5 A 0.8 1.0 1.2 ID = 10 A SOURCE TO DRAIN DIODE FORWARD VOLTAGE VSD - Source to Drain Voltage - V ISD - Diode Forward Current - A 0.0 0.1 0.5 1.0 1.5 100 VGS = 10 V 0 V Pulsed 2.0 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V C iss, Coss, Crss - Capacitance - pF 0.1 100 1000 1 10 100 VGS = 0 V f = 1 MHz C iss C oss C rss 10000 1000 SWITCHING CHARACTERISTICS ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 0.1 100 1000 1 10 100 VDD = 100 V VGS = 10 V R G = 10 Ω td(off) td(on) tr tf REVERSE RECOVERY TIME vs. DRAIN CURRENT ID - Drain Current - A trr - Reverse Recovery Time - ns 0.1 1 10 100 100 di/dt = 50 A/ µs VGS = 0 V 1000 VGS - Gate to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS Q G - Gate Charge - nC VDS - Drain to Source Voltage - V 0 5 10 15 20 100 150 200 VGS VDS ID = 10 A VDD = 160 V 100 V 40 V

Data Sheet D13332EJ1V0DS00 5 2SK3109 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TC - Case Temperature - ˚C dT - Percentage of Rated Power - % 0 20 40 60 80 100 120 140 160 100 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE TC - Case Temperature - ˚C PT - Total Power Dissipation - W 20 40 60 80 100 120 140 160 FORWARD BIAS SAFE OPERATING AREA 10 100 1000 ID - Drain Current - A VDS - Drain to Source Voltage - V 100 0.1 100 µs1 ms PW = 10 µsRDS(on) Limited ID(pulse) ID(DC) 3 ms Power Dissipation Limited TC = 25 ˚C Single Pulse 10 ms TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth(t) - Transient Thermal Resistance - ˚C/W 0.01 0.1 100 1m 10m 100m 1 10 1000 100100µ Single Pulse 10µ R th(ch-A) = 83.3 ˚C/W R th(ch-C) = 2.5 ˚C/W

Data Sheet D13332EJ1V0DS006 2SK3109 0.01 0.1 1 10

100 VDD = 100 V

VGS = 20 V → 0 V R G = 25 Ω Starting Tch = 25 ˚C SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD L - Inductive Load - mH IAS - Single Avalanche Energy - A IAS = 10 A EAS = 35 mJ SINGLE AVALANCHE ENERGY DERATING FACTOR 75 150 125 Starting Tch - Starting Channel Temperature - ˚C Energy Derating Factor - % 50 10025 100 VDD = 100 V R G = 25 Ω VGS = 20 V → 0 V IAS ≤ 10 A

Data Sheet D13332EJ1V0DS00 7 2SK3109 PACKAGE DRAWINGS (Unit : mm) 1)TO-220AB (MP-25) 2)TO-262 (MP-25 Fin Cut) 3)TO-263 (MP-25ZJ) Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 3 10.6 MAX. 10.0 3.6±0.2 4 3.0±0.3 1.3±0.2 0.75±0.1 2.54 TYP. 2.54 TYP. 5.9 MIN.6.0 MAX. 15.5 MAX.12.7 MIN. 1.3±0.2 0.5±0.2 2.8±0.2 φ 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 3 (10) 1.3±0.2 0.75±0.3 2.54 TYP. 2.54 TYP. 8.5±0.212.7 MIN. 1.3±0.2 0.5±0.2 2.8±0.2 1.0±0.5 (10) 1.4±0.2 1.0±0.5 2.54 TYP. 2.54 TYP. 8.5±0.2 123 5.7±0.4 2.8±0.2 4.8 MAX. 1.3±0.2 0.5±0.2 (0.5R) (0.8R) 1.Gate 2.Drain 3.Source 4.Fin (Drain) 0.7±0.2 EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain

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