2SK3092

2SK3092 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• Low ON-resistance.
• Low Qg. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SK3092 N3000 TS IM TA-3081 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. Package Dimensions unit : mm 2083B [2SK3092] 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 5.0 6.5 0.85 0.7 0.6 1.55.5 7.0 0.8 1.6 7.5 0.5 1.2 2.3 0.5 1 23 2.3 2.3 Package Dimensions unit : mm 2092B [2SK3092] 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 6.5 2.3 0.5 1.55.5 0.8 7.0 1.2 2.5 5.0 0.85 0.5 1.2 0 to 0.2 2.3 2.3 0.6

No.6788-2/4 PW=1 µs D.C.≤0.5% P. G R GS 50Ω G S D ID =1.5A R L=133Ω VDD =200V VOUT 2SK3092 VGS =15V ID -- VGS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V ID -- VDS Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V 3020100 IT01967 IT01968 V DS =10V10V 51 0 1 5 20 Tc= --25 25°C 75°C 15V V GS =6V Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 400 V Gate-to-Source Voltage V GSS ±30 V Drain Current (DC) I D 3A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 12 A Allowable Power Dissipation P D 1.0 W Tc=25°C3 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0 400 V Zero-Gate Voltage Drain Current I DSS VDS =320V, VGS =0 1.0 mA Gate-to-Sourse Leakage Current I GSS VGS =±30V, VDS =0 ±100 nA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 3.0 4.0 V Forward Transfer Admittance | yfs | VDS =10V, ID =1.5A 0.7 1.4 S Static Drain-to-Source On-State Resistance RDS (on) I D =1.5A, VGS =15V 1.8 2.3 Ω Input Capacitance Ciss V DS =20V, f=1MHz 360 pF Output Capacitance Coss V DS =20V, f=1MHz 90 pF Reverse Transfer Capacitance Crss V DS =20V, f=1MHz 45 pF Total Gate Charge Qg V DS =200V, VGS =10V, ID =3A 10 nC Turn-ON Delay Time t d(on) See specified Test Circuit 10 ns Rise Time t r See specified Test Circuit 10 ns Turn-OFF Delay Time t d(off) See specified Test Circuit 28 ns Fall Time t f See specified Test Circuit 17 ns Diode Forward Voltage V SD IS=3A, VGS =0 0.85 1.2 V Marking : K3092 Switching Time Test Circuit

No.6788-3/4 yfs -- ID Forward Transfer Admittance, |yfs| -- S Drain Current, ID -- A 0.1 23 5 7 1.0 23 5 7 10 IT01972 V DS =10V 1.0 0.1 75°C 25°C Tc= --25 VGS (off) -- Tc Cutoff V oltage, VGS (off) -- V Case Temperature, Tc -- °C --50 0 50 100 150 IT01971 V DS =10V ID =1mA IF -- VSD Forward Current, IF -- A Diode Forward V oltage, VSD -- V 0.01 0.1 0.001 1.0 100 IT01973 V GS =0 Tc=75 --25 SW Time -- ID Switching Time, SW Time -- ns Drain Current, ID -- A 1.0 100 1000 23 5 7 1.00.1 23 1057 IT01974 V DD =200V V GS =15V td(on) tr td(off) tf Ciss, Coss, Crss -- VDS Ciss, Coss, Crss -- pF Drain-to-Source V oltage, VSD -- V 1000 100 0 5 10 15 20 25 30 IT01975 f=1MHz Ciss Coss Crss VGS -- Qg Gate-to-Source V oltage, VGS -- V Total Gate Charge, Qg -- nC 0123456789 1 0 IT01976 V DS =200V ID =3A Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Static Drain-to-Source On-State Resistance, RDS (on) -- Ω R DS (on) -- VGS Gate-to-Source V oltage, VGS -- V 02468 1 0 1 2 1 4 1 6 1 8 2 0 IT01969 R DS (on) -- Tc Case Temperature Tc -- °C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 --50 --25 0 25 50 75 100 125 150 IT01970 ID =3.0A 1.5A 1.0A Tc=25°C ID=1.5A, V GS =10V ID=1.5A, V GS =15V

No.6788-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2000. Specifications and information herein are subject to change without notice. PS 0 20 40 60 80 100 120 140 160 PD -- Ta Amibient Tamperature, Ta -- °C Allowable Power Dissipation, PD -- W IT01979 1.4 1.2 1.0 0.8 0.6 0.4 0.2 Forward Bias A S O Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V 0.1 1.0 100 0.01 23 5 7 1001.0 23 5 7 10 23 100057 IT01977 DC operation 10ms 1ms 100 µs <10µs Tc=25°C Single pulse IDP =12A ID =3A 0 20 40 60 80 100 120 140 160 PD -- Tc Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W IT01978 Operation in this area is limited by RDS (on).