2SK3064 PANASONIC

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Technical content

Silicon MOS FETs (Small Signal) unit: mm Marking Symbol: 2D 1: Gate 2: Source EIAJ: SC-70 3: Drain S-Mini Type Package (3-pin) 2.1±0.1 1.3±0.10.9±0.1 0.7±0.1 0.3 +0.1 –0 0.15 +0.1 –0.05 2.0±0.2 0.650.2 0.65 0 to 0.1 0.2±0.1 2SK3064 Silicon N-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching n Features l High-speed switching l S-mini type package, allowing downsizing of the sets and auto- matic insertion through the tape/magazine packing. l Low-voltage drive (Vth: -1 to 2V) l Low Ron n Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol V DS V GSO ID IDP PD Tch Tstg Ratings ±20 100 200 150 150 -55 to +150 Unit V V mA mA mW n Electrical Characteristics (Ta = 25°C) Parameter Drain current Gate cut-off current Gate threshold voltage Forward transfer admittance Drain to source ON-resistance Turn-on time Turn-off time Symbol IDSS IGSS V th | Yfs | R DS(on) ton toff Conditions V DS = 30V, VGS = 0 V GS = ±20V, VDS = 0 V DS = 5V, ID = 1mA V DS = 5V, ID = 10mA V DS = 5V, ID = 10mA V DD = 5V, VGS = 0 to 5V, RL = 200W V DD = 5V, VGS = 0 to 5V, RL = 200W min typ 150 Unit mA mA V mS W ns ns max 0.1

Silicon MOS FETs (Small Signal) PD ¾ Ta I D ¾ VDS | Yfs | ¾ VGS ID ¾ VGS V IN ¾ IO 2SK3064 01 2 10826 4 120 100 Ta=25˚C VGS =6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V Drain to source voltage VDS (V) Drain current ID (mA ) 01 2 10826 4 VDS =5V Gate to source voltage VGS (V) Forward transfer admittance |Yfs| (mS ) 240 200 160 120 01 2 10826 4 VDS =5V Ta=–25˚C 25˚C 75˚C Gate to source voltage VGS (V) Drain current ID (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 VO =5V

Ta=25˚C Output current IO (mA ) Input voltage VIN (V) 200 160 120 0 160 40 120 80 14020 100 60 Ambient temperature Ta (˚C) Allowable power dissipation PD (mW )