2SK3048DS-3 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 MOSFETSMD Type N-Channel MOSFET 2SK3048DS 1. Gate 2. Source 3. Drain G D S 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95 +0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 ■ Features

  • VDS (V) = 60V
  • ID = 3A
  • RDS(ON) < 105mΩ @ VGS = 10V
  • RDS(ON) < 125mΩ @ VGS = 4.5V ■ Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Symbol Rating Unit VDS 60 VGS ±20 ID 3 IDM 10 PD 0.35 W RthJA 357 ℃/W TJ 150 Tstg -55 to 150 Notes: 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t≤10s. Junction Temperature Storage Temperature Range Thermal Resistance from Junction to Ambient (Note 2) Pulsed Drain Current (Note 1) A Continuous Drain Current Power Dissipation Parameter Drain-Source Voltage Gate-Source Voltage V

www.kexin.com.cn2 MOSFETSMD Type N-Channel MOSFET 2SK3048DS ■ Electrical Characteristics (Ta = 25℃ unless othewise specified) Parameter Symbol Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS 60 V Zero Gate Voltage Drain Current IDSS 1 μA Gate to Source Leakage Current IGSS ±100 nA Gate to Source Threshold Voltage (Note 3) VGS(th) 0.5 2 V 105 125 Forward Transconductance (Note 3) gFS 1.4 S Input Capacitance Ciss 247 Output Capacitance Coss 34 Reverse Transfer Capacitance Crss 19.5 Turn-On DelayTime td(on) 6 Turn-On Rise Time tr 15 Turn-Off DelayTime td(off) 15 Turn-Off Fall Time tf 10 Total Gate Charge Qg 6 Gate Source Charge Qgs 1 Gate Drain Charge Qgd 1.3 Diode Forward Voltage (Note 3) VSD 1.2 V Note 3. Pulse Test : Pulse Width≤300μs, Duty Cycle≤0.5%. VGS = 0 V, IS = 3 A VDS=30V,VGS=0V f=1MHz VGS=10V,VDD=30V, ID=1.5A,RGEN=1Ω VDS = 15 V, ID = 2 A VDS = 0 V, VGS = ±20 V VDS = VGS , ID = 250μA VGS = 10 V, ID = 3 A Test Conditions ID = 250 μA, VGS = 0V VDS = 60 V, VGS = 0 V RDS(On) Static Drain-Source On-Resistance (Note 3) VGS = 4.5 V, ID = 3 A mΩ VDS=30V,VGS=4.5V ID= 3A pF nC ns ■ Marking Marking 3055

www.kexin.com.cn 3 MOSFETSMD Type N-Channel MOSFET 2SK3048DS 0 1 2 3 4 5 0 2 4 6 8 10 100 200 300 400 0 1 2 3 4 1E-3 0.01 0.1 25 50 75 100 125 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 2 4 6 8 10 100 120 140 VGS =5V、4V、3.0V VGS=2.5V DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) Pulsed VGS=2.0V GATE TO SOURCE VOLTAGE VGS (V) ON-RESISTANCE RDS(ON) (mΩ) ID=3A Ta=25℃ Pulsed VGS— —RDS(ON) DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) VDS=5.0V Pulsed Ta=100℃ Ta=25℃ Transfer Characteristics SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGE VSD (V) Ta=25℃ Pulsed VSDIS — — Output Characteristics THRESHOLD VOLTAGE VTH (V) JUNCTION TEMPERATURE TJ ( )℃ ID=250uA Threshold Voltage VGS=10V DRAIN CURRENT ID (A) ON-RESISTANCE RDS(ON) (mΩ) ID— —RDS(ON) Ta=25℃ Pulsed VGS=4.5V 0.5 ■ Typical Characterisitics