2SK3046DS-3 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

www.kexin.com.cn 1 MOSFETSMD Type N-Channel MOSFET 2SK3046DS 1. Gate 2. Source 3. Drain G D S 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95 +0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 ■ Features

  • 100V/1A,RDS(ON)= 310mΩ@VGS= 10V
  • High density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current capability ■ Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Symbol Rating Unit VDS 100 VGS ±20 TA=25℃ 3 TA=70℃ 2 IDM 10 TA=25℃ 1.25 TA=70℃ 0.8 RthJA 100 ℃/W TJ 150 Tstg -55 to 150 Parameter Drain-Source Voltage Gate-Source Voltage V Junction Temperature Storage Temperature Range Thermal Resistance.Junction- to-Ambient (Note 1) Pulsed Drain Current Continuous Drain Current (TJ=150℃) ID Power Dissipation PD W A

www.kexin.com.cn2 MOSFETSMD Type N-Channel MOSFET 2SK3046DS ■ Electrical Characteristics (TA = 25℃ unless othewise specified) Parameter Symbol Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS 100 V Gate to Source Leakage Current IGSS ±100 nA Gate to Source Threshold Voltage VGS(th) 1 2.5 V On-State Drain Current ID(on) 3 A Static Drain-Source On-Resistance RDS(On) 0.31 Ω Forward Transconductance gFS 2.4 S Input Capacitance Ciss 508 Output Capacitance Coss 29 Reverse Transfer Capacitance Crss 16.5 Turn-On DelayTime td(on) 2 Turn-On Rise Time tr 21.5 Turn-Off DelayTime td(off) 11.2 Turn-Off Fall Time tf 18.8 Total Gate Charge Qg 9 13 Gate Source Charge Qgs 2 Gate Drain Charge Qgd 1.4 Diode Forward Voltage VSD 1.2 V Zero Gate Voltage Drain Current IDSS VDS = 80 V, VGS = 0 V, TJ=125℃ VDS=80V,VGS=10V ID= 5A μA pF nC ns VDS = 0 V, VGS = ±20 V VDS = VGS , ID = 250μA VGS = 10 V, ID = 3 A Test Conditions ID = 250 μA, VGS = 0V VDS = 80 V, VGS = 0 V VGS = 0 V, IS = 1 A VDS=25V,VGS=0V f=1MHz VDD=50V,RL=10Ω ID=3A,VGEN=10V RG=3.3Ω VDS = 10 V, ID = 3 A VDS≥5V, VGS=10V ■ Marking Marking K100

www.kexin.com.cn 3 MOSFETSMD Type N-Channel MOSFET 2SK3046DS Output Characteristics Capacitance Gate Charge On-Resistance vs. Junction Temperature ■ Typical Characterisitics

www.kexin.com.cn4 MOSFETSMD Type N-Channel MOSFET 2SK3046DS Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage Normalized Thermal Transient Impedance, Junction to Foot