2SK304 SANYO
Document overview
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Technical content
No.850E 2SK304 ii N-Ch 1 Junction Silicon FET SANYO anne! Junction Silicon Low-Frequency Amp Applications
Applications
+ Ideal for potentiometers, analog switches, low frequency amplifiers, and constant-current regulators. Absolute Maximum Ratings at Ta =25°C unit Drain-to-Source Voltage Voss 30 OV Gate-to-Drain Voltage Vens -30 V Gate Current Ig 10 mA Drain Current Ip 205 mA Allowable Power Dissipation Pp 150 mW Junction Temperature Tj 125 °C Storage Temperature Tstg —40to+125 °C Electrical Characteristics at Ta=25°C min typ max unit G-D Breakdown Voltage Vieraps Ig=—10pA —-30 v Gate Cutoff Current Igss Voes=—20V 1.0 nd Drain Current Ipss = Vpg=10V,Vgg=0 0.6% 12.0% mA Cutoff Voltage Vest) Vps=10V,Ip=1nA -1 -4 V Forward Transfer Admittance | Ygsl Vps=10V,Vgs=0, f=1kHz 25 6.0 mS Input Capacitance Ciss Vps=10V,Vgs=0, f= 1MHz 5 pF Reverse Transfer Capacitance Cras Vps=10V,Vgs=0, f=1MHz 15 pF % : The 2SK304 is classified by Ipgg as follows : (unit : mA) 06 c 15 [12 D 30 | 25 £ 60 | 50 F 120
10 Pp - Ta
e EK [ || [lt] Package Dimensions 2034A & “LN (unit ; mm) IND TET rn ee E | See? iNT a ———— 4b It Ee Fett ° 2:Gete i é Ne 2: Gute
2 NI SANYO: SPA
o° Dw» © © WwW im Ww Ambient Temperature,Ta ~ °C SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 90895MO(KOTO)6027K2Z/2225MW, TS 8-4016 No.850-1/3
TPT) pee ooo <%? r7 3 3.0 = Vos=0V 3 3 — = Z 2 a | ee " a is} = i 3 Y— Pf soe pa yas oe om i TT f+) 10 2.0 30 “0 50 oO 5 10 Ss 2 2s n Drain-to-Source Voltage,Vps — V Drain-to-Source Voltage,Vps — V Ip - Vas 2 Ves(off) - !pss A | Ip=1.0zA & 2 < iL § Ly ct |i | |] ss j 64 Hoe tL hs ‘se Ji Py SER Ch ap ae BP26E See Gate-to-Source Voltage, Vgs — V Drain CurrentIpgs — mA @ 2 a) a; | ¥is | = Ipss rs | rit 7 venoy ' reste. a i ot 4 _] | | Veg=0V =" Ti | eos i i rt) f=1kHz 2 eee 2, | Pitesti Pee eer wet) fpr ry 51.0 5 L—| Pr Preece eee oT ae PEE ELITToryytyry sf on 1.0 0 & 10 3 ST 40 Drain Current,Ip — mA Drain Current,Ipgs — mA
16 NF-f 2 NF -
Vps=10V 1 Vpg=10V “ Ra i 1-H amet an RH eh ooanmn z ATH + 2 AGE PANE REN HES UNNGEEIE LT {in Gaeemeneeee ELAN Ue POON ee lO Ne
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by m0 tke Wk 10% ™ 0p 70 tk Oe 100k 1 Frequency,f — Hz Frequency, f — He No.850-2/3
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M@ Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO,, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTO, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. @ Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, This catalog provides information as of September, 1995. Specifications and Information herein are subject to change without notice, No.850-3/3