2SK3030DS-3 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
Features
VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V) Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP VegatloVecruoS-niarD DS 30 V VegatloVecruoS-etaG GS 12 V Continuous Drain Current TA=25 5.8 TA=70 4.9 I*tnerruCniarDdesluP DM 30 Power Dissipation TA=25 1.4 TA=70 1 Thermal Resistance.Junction- to-Ambient RthJA 125 /W Thermal Resistance.Junction- to-Case Rthc 60 /W Junction and Storage Temperature Range TJ, TSTG -55 to 150 * Repetitive rating, pulse width limited by junction temperature. ID PD A W 1. Gate 2. Source 3. Drain G D S 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95 +0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1
www.kexin.com.cn2 MOSFETSMD Type N-Channel Enhancement MOSFET 2SK3030DS Electrical Characteristics Ta = 25 Parameter Symbol Testconditions Min Typ Max Unit Drain-Source Breakdo wn Voltage VDSS ID=250 A, VGS=0V 30 V VDS=24V, VGS 1V0= VDS=24V, VGS=0V ,TJ=55 5 ItnerrucegakaelydoB-etaG GSS VDS=0V, VGS= 12V 100 nA VegatloVdlohserhTetaG GS(th) VDS=VGS ID=250 A 0.7 1.4 V VGS=10V, ID 82A8.5= VGS=10V, ID=5.8A TJ=125 39 VGS=4.5V, ID 33A5= m VGS=2.5V, ID 25A4= m ItnerrucniardetatsnO D(ON) VGS=4.5V, VDS A03V5= gecnatcudnocsnarTdrawroF FS VDS=5V, ID S01A5= CecnaticapaCtupnI iss 823 1050 pF CecnaticapaCtuptuO oss 99 pF Reverse Transfer Capacitance Crss 77 pF RecnatsiseretaG g VGS=0V, VDS 3.64.1zHM1=f,V0= QegrahCetaGlatoT g 9.7 12 nC QegrahCecruoSetaG gs 1.6 nC QegrahCniarDetaG gd 3.1 nC temiTyaleDnO-nruT D(on) 3.3 5 ns temiTesiRnO-nruT r 4.8 7 ns temiTyaleDffO-nruT D(off) 26.3 40 ns temiTllaFffO-nruT f 4.1 6 ns Body Diode Reverse Recovery Time trr IF=5A, dI/dt=100A/ s 16 20 ns Body Diode Reverse Recovery Charge Qrr IF=5A, dI/dt=100A/ s 8.9 12 nC Maximum Body-Diode Continuous Current IS 2.5 A VegatloVdrawroFedoiD SD IS=1A,VGS V1V0= VGS=10V, VDS=15V, RL=2.7 ,RGEN=3 RDS(ON)Static Drain-Source On-Resistance IDSSZero Gate Voltage Drain Current A m VGS=0V, VDS=15V, f=1MHz VGS=4.5V, VDS=15V, ID=5.8A Marking Marking A0*