2SK3024-Z KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 1
Technical content
www.kexin.com.cn 1 MOSFE T N-Channel MOSFET 2SK3024-Z ■ Features
- VDS (V) = 60V
- ID = 20 A (VGS = 10V)
- RDS(ON) ＜ 50mΩ (VGS = 10V)
- RDS(ON) ＜ 70mΩ (VGS = 4V)
- Switching power supply 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm G D S ■ Absolute Maximum Ratings Ta = 25℃
1 Gate
2 Drain
3 Source
Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 20 Pulsed Drain Current IDM 40 Power Dissipation Ta = 25℃ 20 Tc = 25℃ 1 Avalanche Energy Capacity (Note.1) EAS 20 mJ Thermal Resistance.Junction- to-Ambient RthJA 125 Thermal Resistance.Junction- to-Case RthJC 6.25 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 PD W V A ℃/W Note.1: L = 0.1mH, IL = 20A, 1 pulse ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=1 mA, V GS=0V 60 V Zero Gate Voltage Drain Current IDSS VDS=50V, VGS=0V 10 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±10 uA Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA 1 2.5 V VGS=10V, ID=10A 50 VGS=4V, ID=10A 70 Forward Transconductance gFS VDS=10V, ID=10A 8 12 S Input Capacitance Ciss 330 Output Capacitance Coss 290 Reverse Transfer Capacitance Crss 70 Turn-On DelayTime td(on) 20 Turn-On Rise Time tr 125 Turn-Off DelayTime td(off) 520 Turn-Off Fall Time tf 1480 Diode Forward Voltage VSD IS=20A,VGS=0V 1.5 V RDS(On) Static Drain-Source On-Resistance VGS=0V, VDS=10V, f=1MHz pF ns mΩ VDD = 30V, ID = 10A VGS = 10V, RL = 3Ω