2SK3019 YFWDIODE

Document overview

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Technical content

Marking Code: KN 2SK3019 SOT-523 1 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd.

FEATURES

z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits z Easy to parallel MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol Parameter Value Units V DS Drain-Source Voltage 30 V V GSS Gate-Source Voltage ±20 V I D Continuous Drain Current 0.1 A P D Power Dissipation 0.15 W T J Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage V DS V GS = 0V, I D = 10µA 30 V Zero Gate Voltage Drain Current I DSS V DS =30V,V GS = 0V 1 µA Gate –Source leakage current I GSS V GS =±20V, V DS = 0V ±1 µA Gate Threshold Voltage V GS(th) V DS = 3V, I D =100µA 0.8 1.5 V V GS = 4V, I D =10mA 8 Ω Drain-Source On-Resistance R DS(on) V GS =2.5V,I D =1mA 13 Ω Forward Transconductance g FS V DS =3V, I D = 10mA 20 mS Dynamic Characteristics* Input Capacitance C iss 13 pF Output Capacitance C oss 9 pF Reverse Transfer Capacitance C rss V DS =5V,V GS =0V,f =1MHz 4 pF Switching Characteristics* Turn-On Delay Time t d(on) 15 ns Rise Time t r 35 ns Turn-Off Delay Time t d(off) 80 ns Fall Time t f V GS =5V, V DD =5V, I D =10mA, Rg=10Ω, R L =500Ω, 80 ns R θJA Thermal Resistance, Junction-to-Ambient 833 ℃ /W * These parameters have no way to verify. N-channel MOSFET 1.GATE 2.SOURCE 3.DRAIN Simplified outline(SOT-523) Equivalent circuit Drain Gate Gate Protection Diode Source

2 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. 048 1 2 1 6 2 0 01234 100 0.1 100 012345 120 160 200 1 10 100 I D =50mA I D =100mA I D R DS(ON) T a =25 Pulsed V GS R DS(ON) ON-RESISTANCE R DS(ON) Ω GATE TO SOURCE VOLTAGE V GS (V) T a =25 Pulsed 200 V DS =3V T a =25 Pulsed Transfer Characteristics DRAIN CURRENT I D (mA) GATE TO SOURCE VOLTAGE V GS (V) 200 T a =25 Pulsed 0.3 V SD I S SOURCE CURRENT I S (mA) SOURCE TO DRAIN VOLTAGE V SD (V) 4.0V 3.5V 3.0V V GS =1.5V 2.5V 2.0V Output Characteristics DRAIN CURRENT I D (mA) DRAIN TO SOURCE VOLTAGE V DS (V) 200303 V GS =2.5V V GS =4V T a =25 Pulsed ON-RESISTANCE R DS(ON) Ω DRAIN CURRENT I D (mA)

3 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. SOT-523 SOT-523 3000Tape/Reel,7”reel Package Outline Summary of Packing Options Package Packing Description Packing Quantity Industry Standard EIA-481-1 UNIT A 1 max bp cD E e H E L p Qw mm 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 0.5 e 1 1.75 1.45 0.2 v 0.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 0.23 0.13 w M bp D e A Lp Q detail X H E E A B B v M A 0 0.5 1 mm scale A 0.95 0.60 c X