2SK3018-3 KEXIN

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  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 MOSF ET N-Channel MOSFET 2SK3018 ■ Features

  • VDS (V) = 30V
  • ID = 0.1 A
  • RDS(ON) ＜ 8Ω (VGS = 4V)
  • RDS(ON) ＜ 13Ω (VGS = 2.5V) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 100 Pulsed Drain Current (Note.1) IDM 400 Power Dissipation PD 200 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V mA Note.1: PW ≤ 10us, Duty Cycle ≤ 1% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 30 V Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±1 uA Gate Threshold Voltage VGS(th) VDS=3V , ID=0.1mA 0.8 1.5 V VGS=4V, ID=10mA 8 VGS=2.5V, ID=1mA 13 Forward Transconductance gFS VDS=3V, ID=10mA 20 mS Input Capacitance Ciss 13 Output Capacitance Coss 9 Reverse Transfer Capacitance Crss 4 Turn-On DelayTime td(on) 15 Turn-On Rise Time tr 35 Turn-Off DelayTime td(off) 80 Turn-Off Fall Time tf 80 Static Drain-Source On-Resistance VGS=0V, VDS=5V, f=1MHz pF ns Ω VGS=5V, VDS=5V, ID=10mA,RL=500Ω,RG=10Ω RDS(On) ■ Marking Marking KN Drain Source Gate Gate Protection Diode 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 1. Gate 2. Source 3. Drain

www.kexin.com.cn2 MOSFE T N-Channel MOSFET 2SK3018 ■ Typical Characterisitics 0 1 2 3 4 50 0.05 0.1 0.15DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE : VDS (V) 3.5V 2.5V VGS=1.5V Ta=25°C Pulsed Fig.1 Typical output characteristics 0.1m 100m DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) 10m 0.2m 0.5m 50m 20m 200m Ta=125°C 75°C 25°C −25°C VDS=3V Pulsed Fig.2 Typical transfer characteristics −50 00 1.5 GATE THRESHOLD VOLTAGE : VGS(th) (V) CHANNEL TEMPERATURE : Tch (°C) 0.5 −25 25 50 75 100 125 150 Fig.3 Gate threshold voltage vs. channel temperature VDS=3V ID=0.1mA Pulsed 0.001 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) DRAIN CURRENT : ID (A) 0.5

20 Ta=125°C

75°C 25°C −25°C VGS=4V Pulsed Fig.4 Static drain-source on-state resistance vs. drain current ( Ι ) 0.001 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) DRAIN CURRENT : ID (A) 0.5 Ta=125°C 75°C 25°C −25°C VGS=2.5V Pulsed Fig.5 Static drain-source on-state resistance vs. drain current (ΙΙ) 0 5 10 15 200 GATE-SOURCE VOLTAGE : VGS (V) ID=0.1A STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () Ta=25°C Pulsed ID=0.05A Fig.6 Static drain-source on-state resistance vs. gate-source voltage −50 0 25 1500 CHANNEL TEMPERATURE : Tch (°C) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) −25 50 75 100 125 Fig.7 Static drain-source on-state resistance vs. channel temperature VGS=4V Pulsed ID=100mA ID=50mA 0.0001 0.001 0.01 0.02 0.5 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) DRAIN CURRENT : ID (A) 0.005 0.05 0.1 0.2 0.1 0.2 0.5 0.002 Ta=−25°C 25°C 75°C 125°C VDS=3V Pulsed Fig.8 Forward transfer admittance vs. drain current 200mREVERSE DRAIN CURRENT : IDR (A) SOURCE-DRAIN VOLTAGE : VSD (V) 1.510.50 100m 50m 20m 10m 0.5m 0.2m 0.1m VGS=0V Pulsed Ta=125°C 75°C 25°C −25°C Fig.9 Reverse drain current vs. source-drain voltage ( Ι )

www.kexin.com.cn 3 MOSF ET N-Channel MOSFET 2SK3018 ■ Typical Characterisitics 200mREVERSE DRAIN CURRENT : IDR (A) SOURCE-DRAIN VOLTAGE : VSD (V) 1.510.50 100m 50m 20m 10m 0.5m 0.2m 0.1m Ta=25°C Pulsed VGS=4V 0V Fig.10 Reverse drain current vs. source-drain voltage ( ΙΙ ) 0.1 CAPACITANCE : C (pF) DRAIN-SOURCE VOLTAGE : VDS (V) 0.5 0.2 0.5 1 2 5 10 20 50 Fig.11 Typical capacitance vs. drain-source voltage Ciss Coss Crss Ta=25°C f=1MHZ VGS=0V 0.1 500 SWITCHING TIME : t (ns) DRAIN CURRENT : ID (mA) 0.2 0.5 1 2 5 10 20 50 100 200 1000 100 Fig.12 Switching characteristics (See Figures 13 and 14 for the measurement circuit and resultant waveforms) Ta=25°C VDD=5V VGS=5V RG=10Ω Pulsed td(off) tr td(on) tf Fig.13 Switching time measurement circuit VGS RG VDS D.U.T. ID RL VDD 90% 50% 10% 90% 10% 50% Pulse width 10%VGS VDS 90% tf toff td(off) tr ton td(on) Fig.14 Switching time waveforms