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Rev.B 1/3 2.5V Drive Nch MOS FET 2SK3018 zStructure Silicon N-channel MOSFET zApplications Interfacing, switching (30V, 100mA) zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. zExternal dimensions (Unit : mm) Each lead has same dimensions UMT3 Abbreviated symbol : KN 0.2 0.15 0.1Min. 0.9 0.7 1.25 2.1 0.3 (3) 0.65 (2) 2.0 1.3 (1) 0.65 (1) Source (2) Gate (3) Drain zPackaging specifications T106 3000 2SK3018 Type Package Code Basic ordering unit (pieces) Taping zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature VDSS VGSS PD∗2 Tch 30 V V mA mW ±20 ±100ID IDP∗1 Continuous Pulsed mA±400 200 150 Tstg °C−55 to +150 Symbol Limits Unit ∗1 Pw≤10µs, Duty cycle≤1% ∗2 With each pin mounted on the recommended lands. zEquivalent circuit Drain Source Gate ∗ Gate Protection Diode ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use a protection circuit when the fixed voltages are exceeded. zThermal resistance Parameter °C / WRth(ch-a) Symbol Limits Unit Channel to ambient ∗ With each pin mounted on the recommended lands. 625∗
Rev.B 2/3 zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) RDS(on) Ciss |Yfs | Coss Crss Min. 0.8 1.5 − 71 3 µAV GS = ±20V, VDS = 0V ID = 10µA, VGS = 0V VDS = 30V, VGS = 0V VDS = 3V, ID = 100µA ID = 10mA, VGS = 4V ID = 1mA, VGS = 2.5V VDS = 5V VDS = 3V, ID = 10mA VGS = 0V f = 1MHz V µA V Ω Ω pF mS pF pF td(on) − 15 − ID = 10mA, VDD 5Vns tr − 35 − VGS = 5Vns td(off) − 80 − RL = 500Ωns tf − 80 − RG = 10Ωns Typ. Max. Unit Conditions Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Static drain-source on-state resistance zElectrical characteristic curves 0 1 23 450 0.05 0.1 0.15DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE : VDS (V) 3.5V 2.5V VGS=1.5V Ta=25°C Pulsed Fig.1 Typical output characteristics 0.1m 100m DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) 10m 0.2m 0.5m 50m 20m 200m Ta=125°C 75°C 25°C −25°C VDS=3V Pulsed Fig.2 Typical transfer characteristics −50 00 1.5 GATE THRESHOLD VOLTAGE : VGS(th) (V) CHANNEL TEMPERATURE : Tch (°C) 0.5 −25 25 50 75 100 125 150 Fig.3 Gate threshold voltage vs. channel temperature VDS=3V ID=0.1mA Pulsed 0.001 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) DRAIN CURRENT : ID (A) 0.5
20 Ta=125°C
75°C 25°C −25°C VGS=4V Pulsed Fig.4 Static drain-source on-state resistance vs. drain current ( Ι ) 0.001 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) DRAIN CURRENT : ID (A) 0.5 Ta=125°C 75°C 25°C −25°C VGS=2.5V Pulsed Fig.5 Static drain-source on-state resistance vs. drain current (ΙΙ) 0 5 10 15 200 GATE-SOURCE VOLTAGE : VGS (V) ID=0.1A STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) Ta=25°C Pulsed ID=0.05A Fig.6 Static drain-source on-state resistance vs. gate-source voltage
Rev.B 3/3 −50 0 25 1500 CHANNEL TEMPERATURE : Tch (°C) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) −25 50 75 100 125 Fig.7 Static drain-source on-state resistance vs. channel temperature VGS=4V Pulsed ID=100mA ID=50mA 0.0001 0.001 0.01 0.02 0.5 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) DRAIN CURRENT : ID (A) 0.005 0.05 0.1 0.2 0.1 0.2 0.5 0.002 Ta=−25°C 25°C 75°C 125°C VDS=3V Pulsed Fig.8 Forward transfer admittance vs. drain current 200mREVERSE DRAIN CURRENT : IDR (A) SOURCE-DRAIN VOLTAGE : VSD (V) 1.510.50 100m 50m 20m 10m 0.5m 0.2m 0.1m VGS=0V Pulsed Ta=125°C 75°C 25°C −25°C Fig.9 Reverse drain current vs. source-drain voltage ( Ι ) 200mREVERSE DRAIN CURRENT : IDR (A) SOURCE-DRAIN VOLTAGE : VSD (V) 1.510.50 100m 50m 20m 10m 0.5m 0.2m 0.1m Ta=25°C Pulsed VGS=4V 0V Fig.10 Reverse drain current vs. source-drain voltage ( ΙΙ ) 0.1 CAPACITANCE : C (pF) DRAIN-SOURCE VOLTAGE : VDS (V) 0.5 0.2 0.5 1 2 5 10 20 50 Fig.11 Typical capacitance vs. drain-source voltage Ciss Coss Crss Ta=25°C f=1MHZ VGS=0V 0.1 500 SWITCHING TIME : t (ns) DRAIN CURRENT : ID (mA) 0.2 0.5 1 2 5 10 20 50 100 200 1000 100 Fig.12 Switching characteristics (See Figures 13 and 14 for the measurement circuit and resultant waveforms) Ta=25°C VDD=5V VGS=5V RG=10Ω Pulsed td(off) tr td(on) tf zSwitching characteristics measurement circuit Fig.13 Switching time measurement circuit VGS RG VDS D.U.T. ID RL VDD 90% 50% 10% 90% 10% 50% Pulse width 10%VGS VDS 90% tf toff td(off) tr ton td(on) Fig.14 Switching time waveforms
Appendix1-Rev1.1 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.