2SK3018 LUGUANG

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  • Manufacturer or author: Provided By digicamel.com
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Technical content

  1. GATE 2. SOURCE 3. DRAIN MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source voltage 30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current 0.1 A PD Power Dissipation 0.2 W Operation Junction and Storage Temperature Range ℃TJ,Tstg -55-150 RθJA Thermal Resistance from Junction to Ambient 625 ℃ /W MARKING Equivalent Circuit FEATURE z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for z Easily designed drive circuits z Easy to parallel Portable equipment V(BR)DSS RDS(on)MAX ID 30V 8Ω@4V 100mA 13Ω@2.5V Interfacin g , Switching APPLICATION z 2SK3018 SOT-323 Plastic-Encapsulate N-channel MOSFETS http://www.lgesemi .com Revision:20220701-P1 mail:lge@lgesemi.com

Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 10µA 30 V Zero Gate Voltage Drain Current I DSS VDS =30V,VGS = 0V 0.2 µA Gate –Source leakage current I GSS VGS =±20V, VDS = 0V ±2 Gate Threshold Voltage VGS(th) VDS = 3V, ID =100µA 0.8 1.5 V VGS = 4V, ID =10mA 8 Ω Drain-Source On-Resistance R DS(on) VGS =2.5V,ID =1mA 13 Ω Forward Transconductance gFS VDS =3V, ID = 10mA 20 mS Dynamic Characteristics* Input Capacitance Ciss 13 pF Output Capacitance Coss 9 pF Reverse Transfer Capacitance C rss VDS =5V,VGS =0V,f =1MHz 4 pF Switching Characteristics* Turn-On Delay Time td(on) 15 ns Rise Time tr 35 ns Turn-Off Delay Time td(off) 80 ns Fall Time tf VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω 80 ns *These parameters have no way to verify. µA MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Typical Characteristics 2SK3018 http://www.lgesemi .com Revision:20220701-P2 mail:lge@lgesemi.com

0.00 0.05 0.10 0.15 0.20 1 10 100 0 5 10 15 20 01234 0.1 100 0.1 100 VGS=2.5V 4.0V 3.5V Ta=25℃ Pulsed Output Characteristics VGS=3.0V VGS=2.0V VGS=1.5V DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) Ta=25℃ Pulsed ID——RDS(ON) VGS= 2.5V VGS= 4V ON-RESISTANCE RDS(ON) (Ω) DRAIN CURRENT ID (mA) 0.3 3 30 Ta=25℃ Pulsed ID=100mA ID=50mA VGS——RDS(ON) ON-RESISTANCE RDS(ON) (Ω) GATE TO SOURCE VOLTAGE VGS (V) 0.3 200 200 VDS=3V Ta=25℃ Pulsed Transfer Characteristics 200 DRAIN CURRENT ID (mA) GATE TO SOURCE VOLTAGE VGS (V) VSDIS — — VGS=0V Ta=25℃ Pulsed SOURCE CURRENT IS (mA) SOURCE TO DRAIN VOLTAGE VSD (V) Typical Characteristics 2SK3018 http://www.lgesemi .com Revision:20220701-P3 mail:lge@lgesemi.com

A0 .900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 /g537 0 °8 °0 °8 ° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP /g54/g50/g55/g16/g22/g21/g22/g3/g51/g68/g70/g78/g68/g74/g72/g3/g50/g88/g87/g79/g76/g81/g72/g3/g39/g76/g80/g72/g81/g86/g76/g82/g81/g86/g3 /g54/g50/g55/g16/g22/g21/g22/g54/g88/g74/g74/g72/g86/g87/g72/g71/g3/g51/g68/g71/g3/g47/g68/g92/g82/g88/g87 /g3 2SK3018 http://www.lgesemi .com Revision:20220701-P4 mail:lge@lgesemi.com

/g54/g50/g55/g16/g22/g21/g22/g3/g55/g68/g83/g72/g3/g68/g81/g71/g3/g53/g72/g72/g79 1000 500 2000 1500 2500 3000 G H I D SOT-323 Reel 2SK3018 http://www.lgesemi .com Revision:20220701-P5 mail:lge@lgesemi.com