2SK3018 HTSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

  • F e a t u r e s • E x t e r n a l d i m e n s i o n s 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel.
  • Applications Interfacing, switching (30V, 100mA)
  • Structure Silicon N-channel M O S F E T æ. Gate ç. Source è. Drain
  • Absolute maximum ratings (Ta = 25°C ) • E q u i v a l e n t c i r c u i t Parameter Symbol Limits Unit Drain-source voltage V DSS 30 V Gate-source voltage V GSS 20 V Continuous I D 100 mA Drain current Pulsed I DP*1 200 mA Continuous I DR 100 mA Reverse drain current Pulsed I DRP*1 200 mA Total power dissipation(Tc=25°C) P D*2 200 mW Channel temperature Tch 150 °C Storage temperature Tstg -55~+150 °C 1Pw›10µs,Duty Cycle› *2With each pin mounted on the recommended lands æ ç è Units:mm æ ç è SOT-23 SOT-323 *A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use a protection circuit when the fixed voltages are exceeded. Gate Drain Source *Gate Protection Diode N-Channel Enhancement Mode MOSFET Date:2011/05 www.htsemi.comsemiconductor JinYu
  • Electrical characteristics (Ta = 25 Parameter Symbo Min. Typ. Max. Unit Test Conditions Gate-source leakage I GSS ---- ---- ±1 µA V GS =±20V,V DS =0V Drain-source breakdown voltage V (BR)DS 30 ---- ---- V I D =10µA ,V GS =0V Zero gate voltage drain current I DSS ---- ---- 1 µA V DS =30V ,V GS =0V Gate treshold Voltage V GS(th) 0.8 ---- 1.5 V V DS =3V ,I D =100µA R DS(ON) ---- 5 8 Ȥ I D =10mA , V GS = 4V Static drain-source on-state resistance R DS(ON) ---- 7 13 Ȥ I D =1mA , V GS =2.5V Forward transfer admittance Yfs 20 ---- ---- mS V DS =3V, I D =10mA Input capacitance Ciss ---- 13 ---- pF Output capacitance Coss ---- 9 ---- pF Reverse transfer capacitance Crss ---- 4 pF V DS =5V V GS =0V F=1 MHz Turn-on delay time t d(on) ---- 15 ns Rise time t r ---- 35 ns Turn-off delay time t d(off) ---- 80 ns Fall time t r ---- 80 ns I D =10 mA ,V DO =5V V GS = 5V R L =500Ȥ R GS =10Ȥ
  • Packaging specifications Package Taping Code T106 Type Basic ordering unit ( pieces ) 3000 2SK3018 °
  • Electrical characteristic curves 2SK3018 N-Channel Enhancement Mode MOSFET Date:2011/05 www.htsemi.comsemiconductor JinYu

N-Channel Enhancement Mode MOSFET Date:2011/05 www.htsemi.comsemiconductor JinYu

  • Switching characteristics measurement circuit 2SK3018 N-Channel Enhancement Mode MOSFET Date:2011/05 www.htsemi.comsemiconductor JinYu