2SK3012DSE-3 KEXIN
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Technical content
www.kexin.com.cn 1 MOSFET Ƶ Features ƽ VDS=20V ƽ RDS(on) 22mȍ@VGS=4.5V ,ID=6.5A ƽ RDS(on) 30mȍ@VGS=2.5V ,ID=5.5A N-Channel Enhancement MOSFET 1. Gate 2. Source 3. Drain 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 Unit: mmSOT-23-3 1.6 0.4 0.15+0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 2SK3012DSE ƽ ID = 6 .5A Ƶ Absolute Maximum Ratings Ta = 25ć Symbol Rating Unit VDS 20 VGS ±10 TA=25 ć 6.5 TA=70 ć 4.8 IDM 30 TA=25 ć 1.3 TA=70 ć 0.8 TJ 150 Tstg - 5 5t o1 5 0 V A Pulsed Drain Current Parameter Continuous Drain Current I D Drain-Source Voltage Gate-Source Voltage Junction Temperature Storage Temperature Range PD WPower Dissipation ć Ƶ Electrical Characteristics Ta = 25ć Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage V DSS ID=250A, V GS=0V 20 V VDS=20V, V GS=0V 1 VDS=20V, V GS=0V, TJ=55ć 10 Gate-Body Leakage Current I GSS VDS=0V, V GS=±10V ±10 uA Gate Threshold Voltage V GS(th) VDS=VGS ,I D=250A 0.45 1 V VGS=4.5V, I D=6.5A 22 VGS=2.5V, I D=5.5A 30 Forward Transconductance *1 g FS VDS=5V, I D=6.5A 6 S Maximum Body-Diode Continuous Current I S 1.6 A Diode Forward Voltage V SD IS=1.6A,VGS=0V 0.76 1.2 V Zero Gate Voltage Drain Current I DSS A m¡RDS(On)Static Drain-Source On-Resistance *1: Pulse test: PW İ300us duty cycleİ 2% Ƶ Marking Marking 2310 G D S G D S