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www.kexin.com.cn 1 MOSFET 6.'6 Ƶ Features ƽ VDS=20V ƽ RDS(on)= mȍ@VGS=4.5V ,ID=3.6A ƽ RDS(on)= 1mȍ@VGS=2.5V ,ID=3.1A G S D Ƶ Absolute Maximum Ratings Ta = 25ć N-Channel Enhancement MOSFET *DWH 6RXUFH 'UDLQ 8QLW PP627 1.6 Symbol Rating Unit VDS 20 VGS ±8 Ta=25ć 2.8 Ta=70ć 2.2 IDM 10 Ta=25ć 1.25 W Ta=70ć 0.8 Thermal Resistance.Junction- to-Ambient *1 100 *2 166 TJ 150 Tstg -55 to 150 ć/WRthJA Pulsed Drain Current ć Junction Temperature Parameter Continuous Drain Current *1 I D Drain-Source Voltage Gate-Source Voltage V A Storage Temperature Range PD Power Dissipation Notes: *2.Surface Mounted on FR4 Board. *1.Surface Mounted on FR4 Board, t İ 5 sec. TJ =150ć

www.kexin.com.cn2 MOSFET Ƶ Electrical Characteristics Ta = 25ć Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage V DSS ID=250­A, VGS=0V 20 V VDS=20V, VGS=0V 1 VDS=20V, VGS=0V ,TJ=55 ć 10 Gate-Body Leakage Current I GSS VDS=0V, VGS=f8V f100 nA Gate Threshold Voltage V GS(th) VDS=VGS , ID=250­A 0.6 1.0 V VGS=4.5V, ID=3.6A VGS=2.5V, ID=3.1A 1 Forward Transconductance * gfs V DS=5V,ID=3.6A 8 S Input Capacitance C iss 300 Output Capacitance C oss 120 Reverse Transfer Capacitance C rss 80 Total Gate Charge Q g 41 0 Gate-Source Charge Q gs 0.65 Gate-Drain Charge Q gd 1.5 Turn-On DelayTime t d(on) 71 5 Turn-On Rise Time t r 55 80 Turn-Off DelayTime t d(off) 16 60 Turn-Off Fall Time t f 10 25 Continuous Source Current (Diode Conduction) I S 1.6 A Diode Forward Voltage V SD Is=1.6 A,V GS=0V 0.76 1.2 V Zero Gate Voltage Drain Current I DSS ­A VDS=10V,VGS=4.5V,ID=3.6A nC ns m¡RDS(On) Static Drain-Source On-Resistance VGS=4.5V, VDS=10V, RL=5.5¡,RGEN=6¡ ID=3.6A VGS=0V, VDS=10V, f=1MHz pF * Pulse test: PW İ300us duty cycleİ 2% Ƶ Marking Marking A2* 6.'6 N-Channel Enhancement MOSFET

www.kexin.com.cn 3 MOSFET Ƶ Typical Characterisitics On-Resistance vs. Drain Current scitsiretcarahC refsnarTscitsiretcarahC tuptuO VDS – Drain-to-Source Voltage (V) – Drain Current (A)I D VGS – Gate-to-Source Voltage (V) – Drain Current (A)I D 012345 TC = 125 C –55 C 0, 0.5, 1 V VGS = 5 thru 2.5 V 1.5 V 2 V 200 400 600 800 1000 0 4 8 1 21 62 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 –50 0 50 100 150 01234567 0.0 0.0 0.0 0.1 02468 1 0 Gate Charge – Gate-to-Source Voltage (V) Qg – Total Gate Charge (nC) VDS – Drain-to-Source Voltage (V) C – Capacitance (pF) V GS Crss Coss Ciss VDS = 10 V ID = 3.6 A – On-Resistance (rDS(on) ) ID – Drain Current (A) Capacitance On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3.6 A TJ – Junction Temperature ( C) (Normalized) – On-Resistance (rDS(on) ) VGS = 2.5 V VGS = 4.5 V 25 C b b b b ȍ ȍ 6.'6 N-Channel Enhancement MOSFET

www.kexin.com.cn4 MOSFET Ƶ Typical Characterisitics Power (W) –0.4 –0.3 –0.2 –0.1 –0.0 0.1 0.2 –50 0 50 100 150 0.0 0.0 0.1 02468 egatloV ecruoS-ot-etaG .sv ecnatsiseR-nOegatloV drawroF edoiD niarD-ecruoS rewoP esluP elgniSegatloV dlohserhT Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 0.1 0.01 10–4 10–3 10–2 10–1 1 Normalized Effective Transient Thermal Impedance – On-Resistance (rDS(on) ) VSD V)V( egatloV niarD-ot-ecruoS – GS – Gate-to-Source Voltage (V) – Source Current (A)I S TJ – Temperature ( C) Variance (V)VGS(th) 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 ID = 3.6 A ID = 250 A TJ = 25 C TJ = 150 C 0.01 0.10 1.00 10.00 Time (sec) TC = 25 C Single Pulse b b b b ȍ 6.'6 N-Channel Enhancement MOSFET