2SK3000-3 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Features
VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A VDS=20V ,RDS(ON)=75m @VGS=1.8V,ID=1.0A 1. Gate 2. Source 3. Drain Parameter Symbol Rating Unit Drain-Source Voltage V DS 20 Gate-Source Voltage V GS ±10 Continuous Drain Current Tj=125 ć ID 3.8 Pulsed Drain Current I DM 15 Power Dissipation P D 1.25 W Thermal Resistance.Junction- to-Ambient R thJA 100 ć/W Junction Temperature T J 150 Storage Temperature Range T stg - 5 5t o1 5 0 ć V A N-Channel Enhancement MOSFET 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 Unit: mmSOT-23-3 1.6 0.4 0.15+0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1
www.kexin.com.cn2 SMD Type ICSMD Type MOSFET 2SK3000 Electrical Characteristics Ta = 25 tinUxaMpyTniMsnotiidnoctseTlobmySretemaraP Drain-Source Breakdown Voltage V DSS VGS=0V,ID V02Au052= Zero Gate Voltage Drain Current I DSS VDS=20V,VGS Au1V0= IegakaeLydoB-etaG GSS VGS= 10V,VDS=0V 100 nA V*egatloVdlohserhTetaG GS(th) VGS=VDS,ID V0.150.0Au052= VGS=4.5V,ID 04A0.5= m VGS=2.5V,ID 06A0.4= m VGS=1.8V,ID 57A0.1= m I*tnerruCniarDetatS-nO D(ON) VDS=5V,VGS A81V5.4= g*ecnatcudnocsnarTdrawroF FS VDS=5V,ID S5A5= CecnaticapaCtupnI ISS 888 pF CecnaticapaCtuptuO OSS 144 pF CecnaticapaCrefsnarTesreveR RSS 115 pF temiTyaleDnO-nruT D(on) 31.8 ns temiTesiR r 14.5 ns temiTyaleDffO-nruT D(off) 50.3 ns temiTllaF f 31.9 ns QegrahCetaGlatoT g 16.8 nC QegrahCecruoS-etaG gs 2.5 nC QegrahCniarD-etaG gd 5.4 nC Drain-Source Diode Forward Current * I S 1.25 A VegatloVdrawroFedoiD SD VGS=0V,IS V2.1A52.1= * Pulse Test:Pulse Width 300 s,Duty Cycle 2% VDS = 10V, ID = 3.5A,VGS = 4.5V RDS(ON)Drain- Source on-state Resistance * VDD=10V,ID=1A,VGS=4.5V,RL=10 ,RGEN=6 VDS = 15V, VGS = 0V,f =1.0MHZ Marking Marking 00A*