2SK2977

2SK2977LS SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• Low ON resistance.
• 4V drive. 3.5 7.2 16.0 16.1 3.6 10.0 0.9 1.2 14.0 0.75 4.5 2.80.6 1.2 2.4 2.552.55 1 2 3 3.2 0.7 retemaraPl obmySs noitidnoCs gnitaRt inU egatloVecruoS-ot-niarDV SSD 03V egatloVecruoS-ot-etaGV SSG 02±V )CD(tnerruCniarDI D 03A )esluP(tnerruCniarDI PD WP £ elcycytud,sµ01 £ %10 21A noitapissiDrewoPelbawollAP D 0.2W 03W erutarepmeTlennahCh cT 051 erutarepmeTegarotSg tsT 051+ot55– retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am egatloVnwodkaerBecruoS-ot-niarDV SSD)RB( ID V,Am1= SG 0=0 3V tnerruCniarDegatloVetaG-oreZI SSD V SD V,V03= SG 0=0 1A µ tnerruCegakaeLecruoS-ot-etaGI SSG V SG V,V61±= SD 0=0 1±A µ egatloVffotuCV SG )ffo(V SD I,V01= D Am1=0 .14 .2V ecnattimdArefsnarTdrawroF| sfy|V SD I,V01= D A81=5 17 2S ecnatsiseRetatS-nOecruoS-ot-niarDcitatS R SD 1)no(V SG I,V01= D A81=5 12 2m W R SD 2)no(V SG I,V4= D A81=5 25 3m W

No.6423–2/4 Continued from preceding page. Switching Time Test Circuit PW=10 ms D.C.≤1% 10V VIN P. G 50W G S ID =18A R L=0.83W VDD =15V VOUTVIN D retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am ecnaticapaCtupnIs siCV SD zHM1=f,V01=0 061F p ecnaticapaCtuptuOs soCV SD zHM1=f,V01=0 08F p ecnaticapaCrefsnarTesreveRs srCV SD zHM1=f,V01=0 03F p emiTyaleDNO-nruTt )no(d tiucriCtseTdeificepseeS5 1s n emiTesiRt r tiucriCtseTdeificepseeS0 54s n emiTyaleDFFO-nruTt )ffo(d tiucriCtseTdeificepseeS0 51s n emiTllaFt f tiucriCtseTdeificepseeS0 81s n egrahCetaGlatoTg QV SD V,V01= SG I,V01= D A81=0 4C n egrahCecruoS-ot-etaGs gQV SD V,V01= SG I,V01= D A81=5 C n egrahC"relliM"niarD-ot-etaGd gQV SD V,V01= SG I,V01= D A81=2 1C n egatloVdrawroFedoiDV DS IS V,A03= SG 0=0 .12 .1V --60 40--40 --20 120 20 60 80 100 160 1400 ID -- VDS 10.0V 3.0V 4.0V 6.0V 8.0V V GS =2.5V IT01054 Tc=75 25°C --25 ID -- VGS V DS =10V IT01055 54726 38 9 1 0 R DS (on) -- VGS Tc=25°C ID =18A IT01056 R DS (on) -- Tc ID=18A, V GS=4V ID=18A, VGS =10V IT01057 Drain Current, ID –A Drain-to-Source Voltage, VDS –V Drain Current, ID –A Gate-to-Source Voltage, VGS –V Gate-to-Source Voltage, VGS –V Static Drain-to-Source On-State Resistance, RDS (on) –m W Static Drain-to-Source On-State Resistance, RDS (on) –m W Case Temperature, Tc – ˚C

No.6423–3/4 23 5 7 td(on) td(off) tr tf 1000 100 0.1 1.0 23 5 7 23 5 710 100 SW Time -- ID V DD =15V V GS =10V IT01060 10000 1000 100 0 5 10 15 20 25 30 Ciss, Coss, Crss -- VDS f=1MHz Ciss Coss Crss IT01061 0 5 10 15 20 25 30 35 40 VGS -- Qg V DS =10V ID =18A IT01062 1000 100 1.0 0.1 0.1 23 5 7 1.0 23 5 7 2 3 5 710 100 A S O IT01063 ID =30A 100ms 100µs 10ms 1ms Operation in this area is limited by RDS (on). DC operation IDP =120A 0 20 40 60 80 100 120 140 160 PD -- Tc IT01064 2.5 2.0 1.5 1.0 0.5 0 20 40 60 80 100 120 140 160 PD -- Ta IT01065 100 1.0 0.1 0.01 100 1.0 100.12 35 7 2 35 7 2 35 7 2 35 7 ‰yfs‰ -- ID V DS =10V 75°C 25°C Tc=--25 IT01058 100 1.0 0.1 0.01 IF -- VSD IT01059 V GS =0 --25 Tc=75 Forward Transfer Admittance, |yf s|–S Drain Current, ID –A Forward Current, IF –A Diode Forward Voltage, VSD –V Switching Time, SW Time – ns Drain Current, ID –A Ciss, Coss, Crss – pF Drain-to-Source Voltage, VDS –V Tc=25°C Single pulse Drain-to-Source Voltage, VDS –V Drain Current,ID –A Allowable Power Dissipation, PD –W Allowable Power Dissipation, PD –W Ambient Temperature, Ta – ˚C Case Temperature, Tc – ˚C Gate-to-Source Voltage, VGS – V Total Gate Charge, Qg – nC

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. 2SK2977LS PS No.6423–4/4