2SK2926-ZJ KEXIN

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  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

Technical content

www.kexin.com.cn 1 MOSF ET N-Channel MOSFET 2SK2926-ZJ ■ Features

  • VDS (V) = 60V
  • ID = 15 A (VGS = 10V)
  • RDS(ON) ＜ 55mΩ (VGS = 10V)
  • RDS(ON) ＜ 110mΩ (VGS = 4V)
  • High speed switching ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 15 Pulsed Drain Current (Note.1) IDM 60 Body to Drain Diode Reverse Drain Current IDR 15 Avalanche Current (Note.2) IAR 15 Power Dissipation (Note.3) PD 25 W Avalanche Energy (Note.2) EAR 19 mJ Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A Note.1: PW ≤ 10us, duty cycle ≤ 1 % Note.2: Value at Tch = 25°C, Rg ≥ 50 Ω Note.3: Value at Tc = 25°C D G S

www.kexin.com.cn2 MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=10mA, VGS=0V 60 Gate-Source Breakdown Voltage VGSS ID=±100uA, VDS=0V ±20 Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 10 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±16V ±10 uA Gate to Source Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.5 2.5 V VGS=10V, ID=8A 55 VGS=4V, ID=8A 110 Forward Transconductance gFS VDS=10V, ID=8A 7 11 S Input Capacitance Ciss 500 Output Capacitance Coss 260 Reverse Transfer Capacitance Crss 110 Turn-On DelayTime td(on) 10 Turn-On Rise Time tr 80 Turn-Off DelayTime td(off) 100 Turn-Off Fall Time tf 110 Body Diode Reverse Recovery Time trr IF= 15A, VGS=0, dI/dt= 50A/us 55 Diode Forward Voltage VSD IF=15A,VGS=0V 1 V RDS(On) Static Drain-Source On-Resistance VGS=0V, VDS=10V, f=1MHz pF V ns mΩ VGS=10V, ID=8A, RL=3.75Ω ■ Typical Characterisitics 0 50 100 150 200 1000 300 100 0.1 0.3 1 3 10 30 100 0.3 0.1 us 1 msPW = 10 ms (1shot) Ta = 25 C 100 us Channel Dissipation Pch (W) Case Temperature Tc (bC) Power vs. Temperature Derating Drain to Source Voltage V (V)DS Drain Current I (A)D Maximum Safe Operation Area Operation in this area is limited by RDS(on) DC Operation (Tc = 25 C)b b N-Channel MOSFET 2SK2926-ZJ

www.kexin.com.cn 3 MOSFET ■ Typical Characterisitics 0 2 4 6 8 10 0 1 2 3 4 5 10 V Drain to Source Voltage V (V)DS Drain Current I (A)D Typical Output Characteristics Gate to Source Voltage V (V)GS Drain Current I (A)D Typical Transfer Characteristics6 V 5 V 3.5 V 4 V 3 V V = 2.5 VGS Pulse Test 4 .5 V Tc = 75 C 25 C –25 C V = 10 V Pulse Test DS 2.0 1.6 1.2 0.8 0.4 0 4 8 12 0010250261 1 10 502 0.20 0.16 0.12 0.08 0.04 –40 0 40 80 120 160 0.1 0.2 1 5 20 0.5 1.0 0.2 0.5 0.1 0.02 0.01 0.05 0.5 2 Gate to Source Voltage V (V)GS Drain to Source Saturation Voltage vs. Gate to Source Voltage V (V)DS(on) Drain to Source Saturation Voltage Drain Current I (A)D Drain to Source On State Resistance R ( )ΩDS(on) Static Drain to Source on State Resistance vs. Drain Current Case Temperature Tc (bC) R ( )DS(on) Static Drain to Source on State Resistance Ω Static Drain to Source on State Resistance vs. Temperature Drain Current I (A)D Forward Transfer Admittance |y | (S)fs Forward Transfer Admittance vs. Drain Current Pulse Test 10 A 5 A I = 20 AD V = 4 VGS Pulse Test 10 V I = 10 AD V = 4 VGS 10 V 5 A Pulse Test

5 A20 A 10 A

V = 10 V Pulse Test DS 25 C Tc = –25 C 75 C b b b b b b N-Channel MOSFET 2SK2926-ZJ

www.kexin.com.cn4 MOSFET ■ Typical Characterisitics 0.1 0.5 1 2 100.2 5 0 10 20 30 40 50 1000 200 500 100 100 8 16 24 32 400 1000 300 100 0.1 0.2 1 5 10 V = 10 V 25 V 50 V DD V = 50 V 25 V 10 V DD 500 200 100 2000 V = 0 f = 1 MHz GS Ciss Coss Crss I = 15AD VGS VDS 0.5 2 Reverse Drain Current I (A)DR Reverse Recovery Time trr (ns) Body to Drain Diode Reverse Recovery Time Capacitance C (pF) Drain to Source Voltage V (V)DS Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Drain to Source Voltage V (V)DS Gate to Source Voltage V (V)GS Dynamic Input Characteristics Drain Current I (A)D Switching Time t (ns) Switching Characteristics rt V = 10 V, V = 30 V PW = 5 us, duty < 1 % GS DD t f d(on)t d(off)t di / dt = 50 A / us V = 0, Ta = 25 CGS V = 0, –5 VGS 10 V 5 V 200 160 120 25 50 75 100 125 150 Channel Temperature Tch (bC) Repetive Avalanche Energy E (mJ)AR Maximum Avalanche Energy vs. Channel Temperature Derating Source to Drain Voltage V (V)SD Reverse Drain Current I (A)DR Reverse Drain Current vs. Source to Drain Voltage Pulse Test I = 40 A V = 25 V duty < 1 % Rg > 50 AP DD Ω b N-Channel MOSFET 2SK2926-ZJ

www.kexin.com.cn 5 MOSFET ■ Typical Characterisitics D. U. TRg I Monitor AP V Monitor DS VDD 50ΩVin 15 V I D VDS I AP V(BR)DSS L VDD E = • L • I •2 1 V V – VAR AP DSS DSS DD mrofevaW ehcnalavAtiucriC tseT ehcnalavA 0.3 0.1 0.03 0.01 10u 100u 1 m 10 m 100 m 1 10 DMP PW T D = PW T ch – c(t) = s (t) • ch – c ch – c = 5 C/W, Tc = 25 C θ γ θ θ D = 1 0.5 0.2 0.01 0.02 0.1 0.05 1 shot Pulse Tc = 25 C Pulse Width PW (S) Normalized Transient Thermal Impedance s (t)γ Normalized Transient Thermal Impedance vs. Pulse Width Vin Monitor D.U.T. Vin 10 V R L V = 30 V DD trtd(on) Vin 90% 90% 10% 10%Vout td(off) Vout Monitor 50Ω 90% 10% tf mrofevaW emiT gnihctiwStiucriC tseT emiT gnihctiwS b b b N-Channel MOSFET 2SK2926-ZJ