2SK2919 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • On-chip high-speed diode (t rr=100ns). Electrical Characteristics at Ta = 25˚C 1 : Gate 2 : Source 3 : Drain SANYO : ZP Note ) Be careful in handling the 2SK2919 because it has no protection diode between Gate-to-Source. Continued on next page. retemaraPl obmySs noitidnoCs gnitaRt inU egatloVecruoS-ot-niarDV SSD 006V egatloVecruoS-ot-etaGV SSG 03±V )CD(tnerruCniarDI D 2A )esluP(tnerruCniarDI PD 8A noitapissiDrewoPelbawollAP D 53W erutarepmeTlennahCh cT 051 erutarepmeTegarotSg tsT 051+ot55– Tc=25°C retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am egatloVnwodkaerBecruoS-ot-niarDV SSD)RB( ID V,Am01= SG 0=0 06V tnerruCniarDegatloVetaG-oreZI SSD V SD V,V084= SG 0=0 .1A m tnerruCegakaeLecruoS-ot-etaGI SSG V SG V,V03±= SD 0=0 01±A n egatloVffotuCV )ffo(SG V SD I,V01= D Am1=0 .20 .3V ecnattimdArefsnarTdrawroF| sfy|V SD I,V01= D A1=8 .05 .1S ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR )no(SD V SG I,V01= D A1=2 .33 .4 W ecnaticapaCtupnIs siCV SD zHM1=f,V02=0 04F p ecnaticapaCtuptuOs soCV SD zHM1=f,V02=5 5F p ecnaticapaCrefsnarTesreveRs srCV SD zHM1=f,V02=5 1F p

No.6121–2/4 Continued from preceding page. Switching Time Test Circuit 50ΩP.G 2SK2919 S G D VOUT VDD=200V VGS ID=1A RL=200Ω PW=1µs D.C.≤0.5% VGS 10V retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am emiTyaleDNO-nruTt )no(d tiucriCtseTdeificepseeS0 1s n emiTesiRt r tiucriCtseTdeificepseeS2 1s n emiTyaleDFFO-nruTt )ffo(d tiucriCtseTdeificepseeS5 6s n emiTllaFt f tiucriCtseTdeificepseeS0 4s n egatloVdrawroFedoiDV DS IS V,A2= SG 0=5 .1V emityrevoceresreveRedoiDt rr sµA001=td/id,A2=SI0 01s n 0.5A ID -VDS ID -VGS R DS(on) -VGS ID =2A Tc=25°CV DS =10V V DS =10V 4.5V 5.0V 5.5V10V 6.0V 4.0V V GS =3.5V Tc=-25°C 75°C Tc=-25°C 75°C 25°C 25°C 0048 1 2 1 6 2 0 3.6 1.6 2.0 2.4 2.8 3.2 1.2 0.8 0.4 00246 8 1 4 1210 1.0 0.1 557 0.1 23 1.0752 3 1075 00 2468 1 4 1210 Drain Current, ID –A Drain-to-Source Voltage, VDS –V Drain Current, ID –A Gate-to-Source Voltage, VGS –V Forward Transfer Admittance, |yf s|–S Drain Current, ID –A |yfs | - ID Gate-to-Source Voltage, VGS –V Static Drain-to-Source On-State Resistance, RDS(on) – W

No.6121–3/4 0 20 40 60 80 120 100 140 160 100ms ID SW Time - ID A S O PD - Tc td(off) tf tr td(on) IDP V DD =200V V GS =10V P.W=1 µs D.C ≤0.5% <1 µ s 10µs100 µs Operation in this area is limited by RDS (on). 1ms 10ms DC operation Ciss,Coss,Crss-VDS Ciss Coss Crss IF -VSD Tc=75 -25 V GS(off)-Tc -60 -40 -20 0 20 80 100 120 140 1606040 V DS =10V ID =1mV 0.1 1.0 100 1000 0 4 8 1 21 62 02 42 83 2 VGS =0 f=1MHz 1000 100 5 7 23 5 7 23 50.1 1.0 0.1 1.0 23 5 710 100 23 5 723 5 7 1000 Ciss, Coss, Crss – pF Drain-to-Source Voltage, VDS –V Switching Time, SW Time – ns Drain Current, ID –A Tc=25°C Single pulse Drain Current,ID –A Drain-to-Source Voltage, VDS –V Allowable Power Dissipation, PD –W Case Temperature, Tc – ˚C Case Temperature, Tc – ˚C Cutoff Voltage, VGS(off) –V Diode Forward Current, IF –A Diode Forward Voltage, VSD –V R DS(on) -Tc ID =1A -60 -40 -20 0 20 80 100 120 140 1606040 V GS =20VV GS =10V ID -Tc -60 -40 -20 0 20 80 100 120 140 1606040 V DS =10V V GS =10V Drain Current, ID –A Static Drain-to-Source On-State Resistance, RDS(on) – W Case Temperature, Tc – ˚C Case Temperature, Tc – ˚C

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2000. Specifications and information herein are subject to change without notice. 2SK2919 PS No.6121–4/4