2SK2907-01R FUJI

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UPS (Uninterruptible Power Supply) DC-DC converters Equivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Gate(G) Source(S) Drain(D) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS =60V VGS =±30V ID =50A VGS =10V ID =50A VDS =25V VCC =30V ID =100A VGS =10V R GS =10 W Min. Typ. Max. Units V V µA mA nA m W S pF A V ns µC ns Min. Typ. Max. Units Thermal resistance R th(ch-c) channel to case R th(ch-a) channel to ambient 1.0 30.0 °C/W °C/W Symbol BV DSS VGS(th) IGSS R DS(on) gfs C iss Coss C rss td(on) tr td(off) tf IAV V SD trr Q rr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D =1mA VGS =0V ID =10mA VDS =VGS Tch=25°C VGS =0V Tch=125°C VDS =0V VDS =25V VGS =0V f=1MHz L=100 µH Tch=25°C IF=100A VGS =0V Tch=25°C IF=50A VGS =0V -di/dt=100A/µs Tch=25°C V A A V mJ W *1 L=0.169mH, Vcc=24V 2.5 3.0 3.5 10 500 0.2 1.0 10 100 5.7 7.8 25 55 5400 8100 2100 3150 550 830 29 50 200 350 160 240 150 230 100 1.0 1.5 0.21 -55 to +150 TO-3PF 1. Gate 2. Drain 3. Source

20 Min

15.5 5.5 9.3 5.45 5.45 5.5 3.2 21.5 1.6 3.5 1.1 2.1 2.3 0.6 –0.2 –0.2 –0.3 –0.3 –0.3–0.3 –0.2 –0.2 –0.2 –0.3 –0.3 +0.2 +0.3 +0.2 —0.1 –0.2ø3.2

2SK2907-01R FUJI POWER MOSFET 0 50 100 1500 100 125 150 Power Dissipation PD=f(Tc) PD [W] Tc [°C] 310 ID [A] VDS [V] Safe operating area ID=f(VDS):D=0.01,Tc=25°C 1µs 10µs 1ms 10ms 100ms 100µs D.C. t TD= t T 012345 100 150 200 6.0V 5.5V 4.0V 3.5V 4.5V 10V 8V 5.0V VGS=20V Typical output characteristics ID=f(VDS):80µs pulse test,Tc=25°C ID [A] VDS [V] 02468 1 0 0.1 100 Typical transfer characteristics ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C ID [A] VGS [V] 310 Typical forward transconductance gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C gfs [s] ID [A] 0 50 100 150 2000 RDS(on) [m W ] ID [A] Typical Drain-Source on-State Resistance RDS(on)=f(ID):80µs pulse test,Tch=25°C 10V 20V 4.5V 5.0V4.0V VGS= 3.5V 5.5V

2SK2907-01R FUJI POWER MOSFET -50 0 50 100 1500 max. typ. Drain-source on-state resistance RDS(on)=f(Tch):ID=50A,VGS=10V RDS(on)[m W ] Tch [°C] -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0VGS(th) [V] Tch [°C] Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=10mA min. typ. max. 2100p 10n 100n Typical capacitances C=f(VDS):VGS=0V,f=1MHz C [F] VDS [V] Ciss Coss Crss 100 120 140 160 180 200 220 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test,Tch=25°C 10V 5V VGS=0V IF [A] VSD [V] 0 50 100 150 200 250 300 12V 30V Vcc=48V Typical Gate Charge Characteristics VGS=f(Q g):ID=100A,Tch=25°C VDS [V] VGS [V] Qg [nC] VGS VDS 210 t [ns] ID [A] td(off) tf tr td(on) Typical Switching Characteristics vs. ID t=f(ID):Vcc=30V,VGS=10V,RG=10 W

2SK2907-01R FUJI POWER MOSFET 0 50 100 1500 100 120 Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch) I(AV) [A] Starting Tch [°C] 0 50 100 150 250 500 750 1000 1250 1500 Maximum Avalanche energy vs. starting Tch Eas=f(starting Tch):Vcc=24V, I(AV)<=100A Eas [mJ] Starting Tch [°C] 0.5 0.2 0.02 0.05 0.1 0.01 Transient thermal impedande Zthch=f(t) parameter:D=t/T Zthch-c [K/W] t [s] t T t T