2SK2906-01 FUJI

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2SK2906-01 N-channel MOS-FET FAP-IIIB Series 60V 7,8m Ω ±100A 150W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (T C =25°C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V DS 60 V Continous Drain Current I D ±100 A Pulsed Drain Current I D(puls) ±400 A Gate-Source-Voltage V GS ±30 V Maximum Avalanche Energy E AV 1268.3 mJ* Max. Power Dissipation P D 150 W Operating and Storage Temperature Range T ch 150 °C T stg -55 ~ +150 °C L=0.169mH,Vcc=24V - Electrical Characteristics (T C =25°C), unless otherwise specified Item Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown-Voltage BV DSS ID =1mA V GS =0V 60 V Gate Threshhold Voltage V GS(th) ID =10mA V DS= V GS 2,5 3,0 3,5 V Zero Gate Voltage Drain Current I DSS V DS =60V T ch =25°C 10 500 µA V GS =0V T ch =125°C 0,2 1,0 mA Gate Source Leakage Current I GSS V GS =±30V V DS =0V 10 100 nA Drain Source On-State Resistance R DS(on) m Ω ID =50A V GS =10V 5,7 7,8 m Ω Forward Transconductance g fs ID =50A V DS =25V 25 55 S Input Capacitance C iss V DS =25V 5400 8100 pF Output Capacitance C oss V GS =0V 2100 3150 pF Reverse Transfer Capacitance C rss 550 830 pF Turn-On-Time t on ( ton =t d(on) +t r ) t d(on) V CC =30V 29 50 ns t r 200 350 ns Turn-Off-Time t off (t on =t d(off) +t f) t d(off) 160 240 ns t f R GS =10 Ω 150 230 ns Avalanche Capability I AV L = 100µH T ch =25°C 100 A Diode Forward On-Voltage V SD IF =100A V GS =0V T ch =25°C 1,0 1,5 V Reverse Recovery Time t rr IF =50A V GS =0V 85 ns Reverse Recovery Charge Q rr -dI /d t=100A/µs T ch =25°C 0,21 µC - Thermal Characteristics Item Symbol Min. Typ. Max. Unit Thermal Resistance R th(ch-c) channel to case 0,83 °C/W R th(ch-a) channel to ambient 35,0 °C/W V GS =10V ID =100A f=1MHz

N-channel MOS-FET 2SK2906-01 60V 7,8m Ω ±100A 150W FAP-IIIB Series > Characteristics Typical Output Characteristics Drain-Source On-State Resistance vs. T ch Typical Transfer Characteristics ID =f(V DS ); 80µs pulse test; T C =25°C R DS(on) = f(T ch ); I D =50A; V GS =10V ID =f(V GS ); 80µs pulse test; V DS =25V; T ch =25°C ID [A] 1 R DS(ON) [m Ω ] ID [A] 3 V DS [V] → T ch [°C] → V GS [V] → Typical Drain-Source On-State-Resistance vs. I D Typical Forward Transconductance vs. I D Gate Threshold Voltage vs. T ch R DS(on) =f(I D ); 80µs pulse test; T C =25°C g fs =f(I D ); 80µs pulse test; V DS =25V; T ch =25°C V GS(th) =f(T ch ); I D =10mA; V DS =V GS R DS(ON) [m Ω ] g fs [S] 5 V GS(th) [V] 6 ID [A] → ID [A] → T ch [°C] → Typical Capacitances vs. V DS Typical Gate Charge Characteristic Forward Characteristics of Reverse Diode C=f(V DS ); V GS =0V; f=1MHz V GS =f(Qg); I D =100A; T C =25°C ↑ ↑ IF =f(V SD ); 80µs pulse test; T ch =25°C C [F] 7 V DS [V] 8 V GS [V] IF [A] 9 V DS [V] → Qg [nC] → V SD [V] → Maximum Avalanche Energy vs. starting T ch Safe Operation Area Eas=f(starting T ch ): V CC =24V; I AV ≤ 100A ID =f(V DS ): D=0,01, Tc=25°C Transient Thermal impedance ↑ 10 ↑ 12 ↑ Z thch =f(t) parameter:D=t/T E AV [mJ] ID [A] Z th(ch-c) [K/W] starting T ch [°C] → V DS [V] → t [s] → This specification is subject to change without notice!

N-channel MOS-FET 2SK2906-01 60V 7,8m Ω ±100A 150W FAP-IIIB Series > Characteristics Typical Switching Characteristics t=f(I D ): V CC = 30V, V GS = 10V, R G = 10 Ω t [ns] V SD [V] → This specification is subject to change without notice! Power Dissipation P D =f(T C ) 100 125 0 25 50 75 100 125 150 T C [°C] P D / P Dmax [%] Maximum Avalanche Current vs. starting T ch IAV =f(starting T ch ) 100 120 0 25 50 75 100 125 150 starting T ch [°C] IAV / I AVmax [%]