2SK2903-01MR FUJI

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UPS (Uninterruptible Power Supply) DC-DC converters Equivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Gate(G) Source(S) Drain(D) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS =60V VGS =±30V ID =40A VGS =10V ID =40A VDS =25V VCC =30V ID =80A VGS =10V R GS =10 W Min. Typ. Max. Units V V µA mA nA m W S pF A V ns µC ns Min. Typ. Max. Units Thermal resistance R th(ch-c) channel to case R th(ch-a) channel to ambient 2.5 62.5 °C/W °C/W Symbol BV DSS VGS(th) IGSS R DS(on) gfs C iss Coss C rss td(on) tr td(off) tf IAV V SD trr Q rr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D =1mA VGS =0V ID =10mA VDS =VGS Tch=25°C VGS =0V Tch=125°C VDS =0V VDS =25V VGS =0V f=1MHz L=100 µH Tch=25°C IF=50A VGS =0V Tch=25°C IF=50A VGS =0V -di/dt=100A/µs Tch=25°C V A A V mJ W *1 L=0.384mH, Vcc=24V 2.5 3.0 3.5 10 500 0.2 1.0 10 100 9.5 12 20 40 3100 4650 1300 1950 350 530 20 30 85 120 88 130 65 120 1.0 1.5 0.13 -55 to +150 TO-220F15 3. Source 2.54

2SK2903-01MR FUJI POWER MOSFET 0 50 100 150 Power Dissipation PD=f(Tc) PD [W] Tc [°C] 310 ID [A] VDS [V] Safe operating area ID=f(VDS):D=0.01,Tc=25°C 1µs 10µs 1ms 10ms 100ms 100µs D.C. t TD= t T 012345 100 150 200 6.0V 5.5V 4.0V 3.5V 4.5V 10V 5.0V VGS=20V Typical output characteristics ID=f(VDS):80µs pulse test,Tc=25°C ID [A] VDS [V] 02468 1 00.1 100 Typical transfer characteristics ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C ID [A] VGS [V] 310 Typical forward transconductance gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C gfs [s] ID [A] 0 50 100 150 2000 RDS(on) [m W ] ID [A] Typical Drain-Source on-State Resistance RDS(on)=f(ID):80µs pulse test,Tch=25°C 10V 20V 4.5V 5.0V4.0V VGS= 3.5V 5.5V

Vcc=48V Typical Gate Charge Characteristics VGS=f(Qg):ID=80A,Tch=25°C VDS [V] VGS [V] Q g [nC] VGS VDS 210 t [ns] ID [A] td(off) tf tr td(on) Typical Switching Characteristics vs. ID t=f(ID):Vcc=30V,VGS=10V,RG=10 W 2SK2903-01MR FUJI POWER MOSFET -50 0 50 100 150 max. typ. Drain-source on-state resistance RDS(on)=f(Tch):ID=40A,VGS=10V RDS(on)[m W ] Tch [°C] -50 -25 0 25 50 75 100 125 1500.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VGS(th) [V] Tch [°C] Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=10mA min. typ. max. 2100p 10n 100n Typical capacitances C=f(VDS):VGS=0V,f=1MHz C [F] VDS [V] Ciss Coss Crss 100 120 140 160 180 200 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test,Tch=25°C 10V 5V VGS=0V IF [A] VSD [V]

2SK2903-01MR FUJI POWER MOSFET 0 50 100 150 Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch) I(AV) [A] Starting Tch [°C] 0 50 100 1500 200 400 600 800 Maximum Avalanche energy vs. starting Tch Eas=f(starting Tch):Vcc=24V, I(AV)<=50A Eas [mJ] Starting Tch [°C] 110 0.5 0.2 0.02 0.05 0.1 0.01 Transient thermal impedande Zthch=f(t) parameter:D=t/T Zthch-c [K/W] t [s] t T t T