2SK2902-01MR FUJI

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UPS (Uninterruptible Power Supply) DC-DC converters Equivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Gate(G) Source(S) Drain(D) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS =60V VGS =±30V ID =22.5A VGS =10V ID =22.5A VDS =25V VCC =30V ID =45A VGS =10V R GS =10 W Min. Typ. Max. Units V V µA mA nA m W S pF A V ns µC ns Min. Typ. Max. Units Thermal resistance R th(ch-c) channel to case R th(ch-a) channel to ambient 3.125 62.5 °C/W °C/W Symbol BV DSS VGS(th) IGSS R DS(on) gfs C iss Coss C rss td(on) tr td(off) tf IAV V SD trr Q rr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D =1mA VGS =0V ID =10mA VDS =VGS Tch=25°C VGS =0V Tch=125°C VDS =0V VDS =25V VGS =0V f=1MHz L=100 µH Tch=25°C IF=45A VGS =0V Tch=25°C IF=45A VGS =0V -di/dt=100A/µs Tch=25°C V A A V mJ W *1 L=0.304mH, Vcc=24V 2.5 3.0 3.5 10 500 0.2 1.0 10 100 12.0 14.5 10.0 25.0 2300 3450 910 1370 260 390 18 30 55 80 70 120 48 80 1.0 1.5 0.11 -55 to +150 TO-220F15 3. Source 2.54

ID [A] VDS [V] Safe operating area ID=f(VDS):D=0.01,Tc=25°C 1µs 10µs 1ms 10ms 100ms 100µs D.C. Characteristics 2SK2902-01MR FUJI POWER MOSFET t TD= t T 0 50 100 150 Power Dissipation PD=f(Tc) PD [W] Tc [°C] 012345 100 5.5V 4.0V 3.5V 4.5V 10V VGS=20V Typical output characteristics ID=f(VDS):80µs pulse test,Tc=25°C ID [A] VDS [V] 02468 1 00.1 100 Typical transfer characteristics ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C ID [A] VGS [V] 210 Typical forward transconductance gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C gfs [s] ID [A] 0 2 04 06 08 0 1 0 00 RDS(on) [m W ] ID [A] Typical Drain-Source on-State Resistance RDS(on)=f(ID):80µs pulse test,Tch=25°C 10V 20V 4.5V 5.0V4.0V VGS= 3.5V 5.5V

C=f(VDS):VGS=0V,f=1MHz C [F] VDS [V] Ciss Coss Crss 210 t [ns] ID [A] td(off) tf tr td(on) Typical Switching Characteristics vs. ID t=f(ID):Vcc=30V,VGS=10V,RG=10 W 0 20 40 60 80 100 120 140 12V 30V Vcc=48V Typical Gate Charge Characteristics VGS=f(Q g):ID=45A,Tch=25°C VDS [V] VGS [V] Qg [nC] VGS VDS 2SK2902-01MR FUJI POWER MOSFET -50 0 50 100 150 max. typ. Drain-source on-state resistance RDS(on)=f(Tch):ID=22.5A,VGS=10V RDS(on)[m W ] Tch [°C] -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0VGS(th) [V] Tch [°C] Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=10mA min. typ. max. 100 110 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test,Tch=25°C 10V 5V VGS=0V IF [A] VSD [V]

2SK2902-01MR FUJI POWER MOSFET 0 50 100 150 Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch) I(AV) [A] Starting Tch [°C] 0 50 100 150 100 200 300 400 500 Maximum Avalanche energy vs. starting Tch Eas=f(starting Tch):Vcc=24V, I(AV)<=45A Eas [mJ] Starting Tch [°C] 110 0.5 0.2 0.02 0.05 0.1 0.01 Transient thermal impedance Zthch=f(t) parameter:D=t/T Zthch-c [K/W] t [s] t T t T